Current scaling in a lateral transistor wherein a plurality of emitter-collector circuits are established, certain of said circuits having a different base width than certain other of said circuits. In one embodiment, separate transistors are formed, each with its own emitter and collector, each portion of each collector being spaced an equal distance from its associated emitter the base widths of the different transistors being different, such that, with the emitters coupled in common, different currents being dependent on the base width of the associated transistor. In a second embodiment, a common emitter is employed with the separate collectors formed as arcs about the emitter, the base widths between the emitter and the different collectors being different.

A current ratioing device structure wherein a line of equally spaced emitter regions is parallel to another line of equally spaced base contact portions all within a base region. All of the emitter regions except the first and last emitter region in the line have contact portions so that the first and last emitter regions are "dummy" emitters.

An integrated attenuation element having a variable attenuation characteristic for high frequency signals comprises a semiconductor body of one conductivity type having at least three zones of the opposite conductivity type arranged in one face thereof. One of the zones serves as an input for high frequency signals and another of the zones serves as an output, while the third zone serves as a control electrode. An attenuation circuit which employs such an element includes means for applying control signals to the zones to control the attenuation of the element.

An integrated attenuation element having a variable attenuation characteristic for high frequency signals comprises a semiconductor body of one conductivity type in one face of which there are arranged two zones of the other conductivity type. The semiconductor body has a contact electrode on the face opposite to that containing the two zones. One of the two zones serves as an input or as an output and the contact electrode serves as an output or as an input, respectively, for the high frequency signals, and the other of the two zones serves as a control zone. In a controllable attenuation circuit means are provided for applying a first control signal between the input and output of the attenuation element, the output being decoupled from ground with respect to high frequencies. The amplitude of the first signal is variable in such a manner that for minimum attenuation it possesses a value at which the p-n junction defining the input zone in the semiconductor body is biased in the forward direction, and to provide increased attenuation the first signal falls to a limiting value at which the p-n junction does not conduct. Means are also provided for applying a second control signal between the control zone, which is connected to ground for high frequencies, and the output. The amplitude of the second control signal is variable in such a manner that for minimum attenuation it possesses a value at which the p-n junction defining the control zone in the semiconductor body does not conduct current, and to provide increased attenuation up to a maximum amount, the signal increases with a polarity such that the p-n junction continuously conducts current to an increasing extent.

A semi-conductor device embodying the invention is in the form of a lateral transistor and has a substrate of n-type material carrying a base electrode, and diffused-in regions of p-type material one of which carries an emitter electrode and two others of which each carry respective collector electrodes. The collector electrodes are at different distances from the emitter electrode and have substantially different current gains. The device is thus useful as a current amplifier or, in reverse, as a current attenuator.