A high-power transistor in which the emitter is in the form of a grid adjoining a surface of a semiconductor body having collector and base regions, the latter surrounding the emitter. The apertures in the emitter grid form a plurality of juxtaposed rows with the base region. The surface of the semiconductor body is covered with an insulating layer which covers the line of intersection of the emitter base junction with the surface. Base and emitter contacts are provided on the insulating layer forming an interdigital system. Viewed along a row, the apertures in the emitter grid first have an increasing width and then a decreasing width. The apertures in a direction at right angles to the row correspond to digits of the base contact are arranged in rows. The insulating layer also comprises windows located substantially between four adjacent apertures through which the emitter contacts are connected to the emitter region.
A field effect transistor fabricated at least partially in a body of semiconductor material has a plurality of regions of one conductivity type adjacent a surface of the body, and has a gate overlying a plurality of intersecting channels of like conductivity type between the regions. Contacts in each of the regions are interconnected by a metallization pattern such that the regions form an array of alternating sources and drains, each source and drain being separated by a channel.
Structures which improve the high frequency performance of bipolar discrete or integrated transistors through minimization of base contact size and hence collector-base capacitance (and collector-substrate capacitance, if integrated), are disclosed. The transistor comprises at least one elongate emitter arm and substantially minimum-dimension base contacts positioned one facing each side of each emitter arm at at least a minimum dimension from each emitter arm. A base diffusion area is positioned under and is minimum-dimensionally larger than the outer perimeter of the areas bounded by all of the smallest imaginary triangles each including a base contact and a facing emitter arm. Specific examples are described, namely a so-called "lozenge" structure, for relatively narrow emitters, a "cross" structure for wider emitters, and a "T" structure.
A microwave power transistor system using diamond-shaped emitter and base regions to maximize the ratio of emitter periphery to base area and thereby maximize the gain of the device within manufacturing constraints. A plurality of transistor cells are arranged in a symmetrical array to facilitate both heat flow and ease of interconnection. A transistor phased array radar system has improved phase shift stability and does not require feedback correction.
A current ratioing device structure wherein a line of equally spaced emitter regions is parallel to another line of equally spaced base contact portions all within a base region. All of the emitter regions except the first and last emitter region in the line have contact portions so that the first and last emitter regions are "dummy" emitters.
A high frequency and high power semiconductor device comprising unit cells of the same shape, connected in parallel and fabricated on a chip. The thermal resistance of the chip is reduced by arranging the unit cells in a zigzag pattern. The zigzag arrangement of the unit cells is such that each unit cell in a line is offset by approximately one-half pitch from the unit cells in neighboring lines. As a result of the zigzag arrangement of the unit cells, the temperature of each unit cell is less influenced by heat from the unit cells in neighboring lines than are unit cells in an orthogonal matrix. In addition, the thermal distribution of the unit cells is improved to prevent hot spots. Using the zigzag arrangement, a single transistor can output over 100 watts C.W. at more than 900 MHz.
