This disclosure is directed toward a method of fabricating an inverted space charge limited solid-state triode and to the device resulting therefrom. The method, in general, comprises depositing a continuous film of conductive metal to act as a gate, oxidizing the exposed side of the gate metal to form an insulating layer, depositing a semiconductive layer on the top of the insulated gate, depositing a pinhole cathode grid on the semiconductor, oxidizing the exposed side of the cathode grid to form an insulating coating, depositing more semiconductor over the cathode insulation and depositing a continuous film of conductive metal over the semiconductor to act as a collector.
A metal body is sealed to a semiconductor device by producing an insulator layer on a surface of the device, producing a semiconductor layer on the insulator layer, and bonding a surface of the body to the semiconductor layer. Preferably, an oxide layer is grown on the device surface, and a silicon layer is deposited on the oxide layer.
