Disclosed is a method of implanting impurity ions wherein such ions are implanted into the surface of a semiconductor partially exposed by a hole in two layers, one being made of silicon oxide and the other being made of a metal such as aluminum.
A method for improving the reverse leakage characteristics in metal semiconductor contact devices is disclosed. The process embodies ionic plasma bombardment as a step in producing improved reverse bias current voltage characteristics between metal semiconductor contacts.
A method for manufacturing a semiconductor device comprises forming a first region of one conductivity type in a substrate of an opposite conductivity type through a main surface of the substrate, depositing a first metal electrode layer on the first region and depositing an insulation film on the first electrode layer. The insulation film is etched over the first region with a plurality of relatively minute holes to expose the first metal electrode layer through the holes and the first metal electrode layer is etched with a plurality of holes to expose the first region through said holes, the holes in the first metal electrode layer being etched such that the holes of the first metal electrode layer are larger than that of the insulation film. A second region is formed in the first region through the holes of the first metal electrode layer and insulation film. The second region is of opposite conductivity to the first region. A second metal electrode layer is formed on the insulation film so as to electrically connected to each exposed section of the second region through the holes of the first metal electrode layer and insulation film.
A technique of reducing the radiation sensitive nature of both P-channel N-channel components of a CMOS structure. The channel oxide in both components is grown as pure as possible during the manufacture with a special attempt to keep the alkali content low. After the manufacturing process is complete, the P-channel component is masked while the entire N-channel component is subjected to an ion implantation which radiation hardens the entire CMOS device or circuit. This process provides a CMOS device which maintains a useable threshold level in the presence of and after it has been exposed to 10.sup.6 rad of radiation.
A deposited metallic film on a substrate is bombarded with high energy ions having an energy of at least 10 Kev with the ions being selected from the group of ions ranging between helium and argon. The selected ions depend upon the metal forming the film and the thickness of the film. This bombardment reduces the yield stress of the film in any area in which the ions strike and is particularly useful to form metallic lands on a semiconductor substrate.
The production sequence of the UHF transistors includes at least one ion implantation step for doping the emitter, which takes place after doping of the base, through an emitter window etched from a thin oxide layer closing the base window previously etched from a thick oxide layer. This ion implantation is followed by an anneal in neutral atmosphere while the emitter window remains open, at a temperature lower than 1000.degree.C in the case of silicon. The base is doped either by diffusion or ion implantation. Two further ion implantations are used to degenerate the base contact area and to reduce transversal base resistance.
