A semiconductor device having platinum dispersed throughout said device. The dispersion of platinum within a semiconductor device results in improved electrical characteristics of the device. In a silicon diode, the improved characteristics include the reduction of reverse recovery time and an increase in the breakdown voltage. In a silicon transistor, the improved characteristics include the achievement of high switching speeds while maintaining high forward current gain.
In a power MOS FET and the method of manufacturing such FET, in which a material, such as platinum, having a small resistivity compensation effect is diffused as a lifetime killer into the vicinity of a PN diode junction formed by the drain region and the base region. The diffusion is made through an opening formed in a covering insulator layer. An example of the lifetime killer is platinum and the preferable temperature range for diffusing platinum is not higher than 900.degree.C.
A low-loss P-i-n diode includes an i-type layer consisting of first and second i-type regions formed on the cathode layer of the diode and the i-type has a thickness W.sub.i of less than 25 .mu.m. The impurity concentration of the first i-type region is higher than that of the second i-type region. To obtain a good forward-voltage V.sub.f, W.sub.i.sup.2 /.tau. is selected to be in the range of 20-200cm.sup.cm.sup.2/sec and the carrier lifetime .tau. of the i-type layer is controlled by a carrier lifetime killer with a small resistivity compensation effect which is diffused into the i-type layer. The P-i-n diode has a high reverse breakdown voltage, small forward-voltage drop and a short recovery time.
Disclosed is a rectifier pellet and a method for the fabrication thereof. A layer of oxide is grown on a semiconductor wafer that has been diffused to form a plurality of rectifier pellets, and openings are etched in the oxide at locations corresponding to each pellet. Gold is diffused through the openings into a preselected distribution to reduce turnoff time. Grooves are etched to facilitate glass passivation and division of the wafer into pellets.
A semiconductor junction-isolated PNPN crosspoint switch array has a plurality of crosspoint switches that are each formed of four regions of alternating conductivity type in a semiconductor substrate. Low enough leakage to allow the crosspoint switch array to be used in large telephone switching systems is achieved by proper selection of the thickness of the semiconductor regions and by appropriate gold doping thereof.
Integrated structure bipolar transistors with controlled storage time are manufactured by forming at least one bipolar transistor occupying a first area on a first surface of the silicon material, covering the first surface of the silicon material with an insulating material layer, and selectively removing the insulating material layer to open a window. The window has a second area much smaller than the first area occupied by the bipolar transistor. Therefore, by implanting into the silicon material a medium dose of platinum ions through the window and diffusing into the silicon material the implanted platinum ions, a uniform distribution of platinum inside the transistor is obtained.
