A bias circuit for a complementary transistor power amplifier output stage which comprises a biasing transistor having its emitter connected to the base of one of the complementary transistors and its collector connected to the base of the other of the complementary transistors. A collector resistor is in circuit with the collector of the biasing transistor and with a source of biasing potential. The input signal to the amplifier is coupled to the emitter of the biasing transistor and to the base of one of the complementary transistors. In one embodiment, a resistive divider biases the base of the biasing transistor, while in another embodiment, the base of the biasing transistor is directly connected to the source of biasing potential.
A self-compensated semiconductor amplifier operable over the voltage range of a one cell battery and having an output voltage which varies inversely with the voltage applied by the one cell battery. The amplifier has a first transistor including base, emitter and collector electrodes. First and second resistors are serially connected from the collector electrode to the one cell battery. The base electrode is coupled to the junction of the first and second series connected resistors to provide a bias voltage at the base electrode, and for maintaining a constant voltage at the junction of the two resistors. The emitter electrode is coupled to ground potential. An output circuit is coupled to the collector electrode, and the collector electrode develops an output voltage thereat which is less than the bias voltage at the base electrode, and which varies inversely with the one cell battery voltage.
A temperature-dependent current supplier specially suitable for application to an integrated circuit is characterized as follows. The base of a first transistor is connected to a connecting point between two resistors which are connected in series to each other in a collector circuit of said transistor, the voltage between the base and the collector of said transistor being selected at about kT/q where the charge quantity is q, the Boltzmann's constant is k and the absolute temperature is T; and the base of a second transistor is connected to the collector of said first transistor, respective temperature coefficients of the base-emitter voltages of said first and second transistors being selected to differ from each other; and also current-outputs of the quantity proportional to the absolute temperature is taken out from the collector circuit of said second transistor.