Driving currents supplied to the current driving conductors in the hard magnetization direction axis and the easy magnetization direction axis of a thin film magnetic memory device are selected to prevent inversion of the magnetization when driving current is supplied to only one of the conductors and to permit inversion of the magnetization only when driving current is supplied simultaneously to both conductors. Readout is provided when driving current is simultaneously supplied to both conductors and writein is provided when driving current is supplied to one of the conductors independent of the writein information and driving current is supplied to the other of the conductors dependent upon writein information.
DESCRIPTION OF THE INVENTION
The present invention is a Continuation-in-part application of patent application Ser. No. 586,167, filed Oct. 12, 1966, and now abandoned, for Large Capacity Ferromagnetic Thin Memory Device, and assigned to the same assignee.
