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Document Number
US Patent 3753802
Issued Date
August 21, 1973
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Inventors
Tummers; Leonard Johan
(Emmasingel, Eindhoven,NL)
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Abstract
A method of making a transistor by forming a layer of high resistivity on a semiconductor collector body, diffusing a base zone into the layer to a depth less than the thickness of the layer and then forming an emitter zone in the base zone.
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Drawing from US Patent 3753802
Patent Report
Tags:
transistor
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Description:
Amusing 0%
Clever 0%
Complex 0%
Efficient 0%
Historic 0%
Important 0%
Innovative 0%
Interesting 0%
Practical 0%
Simple 0%
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Number of Claims:
4
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Owner
North American Philips Co., Inc.
(New York, NY)
Published
August 21, 1973
Application Number
04/349,709
Filed
March 5, 1964
US Classification
438/309
257/E21.087 257/E21.092 257/E21.106 257/E29.185 438/312 438/508
Int'l Classification
C30B 25/02 (20060101) H01L 21/02 (20060101) H01L 21/203 (20060101) H01L 21/18 (20060101) H01L 21/205 (20060101) H01L 29/00 (20060101) H01L 29/66 (20060101) H01L 21/00 (20060101) H01L 29/732 (20060101)
Examiner
Lanham; Charles W.
Assistant Examiner
Tupman
Parent Case
This application is a division of my copending application, Ser. No. 84,923, filed Jan. 25, 1961 now U.S. Pat. No. 3,217,214.
Priority Data
Jan 29, 1960 [NL] 247,902
USPTO Field of Search
148/1.5 148/1.6 148/33 148/174 148/175 317/234 317/235 29/25.3 29/25.3D 29/25.3GR 29/155.5G
Related Patents
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Prev:
METHOD OF DEPOSITING EXPITAXIAL
Next:
METHOD OF DIVIDING SEMICONDUCTOR LAYER INTO A
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