An electrical interconnection structure on an integrated circuit is provided that has a) a substrate layer; b) a diffusion barrier on the substrate layer; c) a copper layer on the diffusion barrier; and d) a copper oxide layer on the copper layer. Methods of making such an interconnection structure is also provided. Such an interconnection structure may be used as a rectifier to prevent damage of sensitive devices from voltage spikes.

A semiconductor device array comprising highly densely arranged nano-size semiconductor devices is prepared by a simple method. The array comprises a porous body having cylinder-shaped pores formed by removing cylinder-shaped regions from a structure that includes a matrix member formed so as to contain silicon or germanium and the cylinder-shaped regions containing aluminum and dispersed in the matrix member, semiconductor regions formed in the pores, each having at least a p-n or p-i-n junction, and a pair or electrodes, arranged respectively on the top and at the bottom of the semiconductor regions. The semiconductor regions and the pair of electrodes form a plurality of semiconductor devices on a substrate.

A reversible thermoelectric converter includes first and second quantum well diodes and an electrical connection between the first and second quantum well diodes without a thermal barrier between them. Each quantum well diode includes first and second electrodes wherein electrons are quantized in discrete energy levels and a dielectric layer providing a potential barrier between the first and second electrodes. When electrons in the first quantum well diode have a higher temperature than the electrons in the second quantum well diode, electric voltage fluctuations resulting from transitions of the electrons between the energy levels in the first quantum well diode are coupled from the first quantum well diode to the second quantum well diode. The reversible thermoelectric converter can be operated for power conversion of thermal energy to electric energy, as a heat pump or a refrigerator, or as an amplifier. A planar array of reversible thermoelectric converter elements provides a desired output voltage and current.

A reversible thermoelectric converter includes first and second quantum well diodes and an electrical connection between the first and second quantum well diodes without a thermal barrier between them. Each quantum well diode includes first and second electrodes wherein electrons are quantized in discrete energy levels and a dielectric layer providing a potential barrier between the first and second electrodes. When electrons in the first quantum well diode have a higher temperature than the electrons in the second quantum well diode, electric voltage fluctuations resulting from transitions of the electrons between the energy levels in the first quantum well diode are coupled from the first quantum well diode to the second quantum well diode. The reversible thermoelectric converter can be operated for power conversion of thermal energy to electric energy, as a heat pump or a refrigerator, or as an amplifier. A planar array of reversible thermoelectric converter elements provides a desired output voltage and current.

An electrical interconnection structure on an integrated circuit is provided that has a) a substrate layer; b) a diffusion barrier on the substrate layer; c) a copper layer on the diffusion barrier; and d) a copper oxide layer on the copper layer. Methods of making such an interconnection structure is also provided. Such an interconnection structure may be used as a rectifier to prevent damage of sensitive devices from voltage spikes.