An improved transistor, such as a control transistor, of the type having a plurality of strip-like emitter regions formed in a single base region in a semiconductor body. The strip-like emitter regions are of different widths and preferably are positioned in spaced side by side relationship and decrease in width in the direction of succession of the strips.
CROSS-REFERENCE TO RELATED PATENT APPLICATION
This application is a division of applicant's copending U.S. Pat. application, Ser. No. 845,773, filed July 29th, 1969, now U.S. Pat. No. 3,673,012 issued June 27th, 1972.
A power transistor has a plurality of contacted, individual transistors. The contacts of these individual transistors are arranged at such intervals from one another that a temperature distribution results during operation that is substantially uniform for an intended power range of the transistor.
The invention relates to a power transistor with a semiconductor body. When shutting off a power transistor, local fusing of the semiconductor body may occur, if a characteristic power loss is exceeded for a certain period of time (second breakdown). This can be avoided, if the transistor includes a multiplicity of small partial transistors with very narrow emitter zones which are mutually paralleled via a ballast resistance each.
A semiconductor device is disclosed which is provided with at least one flexible conducting film having an inner electrode portion and an outer electrode portion. The inner electrode portion is conductively bonded to at least one of two kinds of electrode films formed on one main surface of a semiconductor substrate, and has a form similar to the shape of the electrode film. The outer electrode portion is integrated with the inner electrode portion into one body but is not bonded to the electrode film. The conducting film can be previously bonded to a transparent insulating film, if desired, and is arranged in registry with the electrode film on the semiconductor substrate, while being supported by the insulating film. Accordingly, the inner electrode portion of the conducting film is bonded to the electrode film having a complicated pattern, readily and accurately. The inner electrode portion serves to reduce the electric resistance of the electrode film and to increase the current capacity of the electrode. If a transparent insulating film has been used, it can be removed after device formation, if desired.
Printer apparatus for use with a dictation system including a changer device having an input stack, a recording deck for recording dictated messages, and an output stack for storing recording media onto which dictated messages have been recorded. The changer device further includes an optical reading element for reading identifying indicia on the recording medium in the recording deck. This information along with other information such as the number of dictated messages recorded on the recording medium, the time of day, etc. are printed out by the printer.
A method of manufacturing a semiconductor device is set forth to provide a high-frequency bipolar transistor with very fine emitter-base geometry. The method comprises the steps of forming a base region, forming an insulating layer on the base region, and implanting emitter zones and base contact zones in windows in the insulating layer. Only emitter windows are first formed, then the emitter zones are implanted and a masking layer is provided on the insulating layer and in the emitter windows so that the base contact windows can be etched through apertures in the masking layer. The base contact zones are then implanted to the base contact windows.
