|
Claims  |
|
|
The embodiments of the invention in which an exclusive property or
privilege is claimed are defined as follows:
1. In an optical information storage material having a base and a film
deposited on said base the state of which can be changed between the low
optical density state and the high optical density state by the
application of electrical, optical or thermal energy, the improvement
wherein said film comprises TeO.sub.x1 in which 0 < x1 < 2.0.
2. The improvement as claimed in claim 1, wherein said film further
comprises vanadium oxide as an additive for making it easy to transform
the physical state of the film, said vanadium oxide being VO.sub.x2 and
the film having a composition of (TeO.sub.x1).sub. 1.sub.-y
(VO.sub.x2).sub.Y in which 0 <x2 <2.5 and 0 < Y <0.6.
3. The improvement as claimed in claim 1, wherein said film further
comprises lead oxide as an additive for increasing the sensitivity of the
film, said lead oxide being PbO.sub.x3 and said film having a composition
of (TeO.sub.x1) .sub.1.sub.-z (x3).sub.z in which 0 < X3 < 1.0 and 0 < z <
0.5.
4. The improvement as claimed in claim 1, further comprising a transparent
protective layer on said film.
5. An optical information storage device as recited in claim 1, wherein
said film further comprises a transition metal oxide.
6. The improvement as claimed in claim 5, wherein said transition metal
oxide is a material selected from the group consisting of CrO.sub.x4,
MnO.sub.x5, and CoO.sub.x7, wherein 0 < x4 < 1.5, 0 < x5 < 2, and 0 < x7 <
1.5.
7. An optical information storage material comprising a transparent base
and a film deposited on said base the state of which can be changed
between the low optical density state and the high optical density state
by the application of electrical, optical or thermal energy, said film
comprising TeO.sub.x1 in which 0 < x1 < 2.0.
8. A method of making an optical information storage material having a base
and a film deposited on said base which is comprised of TeO.sub.x1 in
which 0 < x1 < 2.0, comprising evaporating TeO.sub.2 under deoxidizing
conditions and depositing the vapor on the base.
9. The method as claimed in claim 8 in which the step of evaporating under
deoxidizing conditions comprises vacuum evaporating at a vacuum on the
order of 5 .times. 10.sup.- .sup.5 mm Hg.
10. A method of making an optical information storage material having a
base and a film deposited on said base which is comprised of TeO.sub.x1,
in which 0 <X1 <2.0, and an oxide taken from the group consisting of
VO.sub.x2 and PbO.sub.x3, in which 0 < X2 < 2.5 and 0 < X3 < 1.0,
comprising the steps of:
preparing a solid solution of a tellurium oxide and an oxide taken from the
group consisting of a vanadium oxide and a lead oxide; and
evaporating the solid solution under deoxiding conditions and depositing
the vapor of the base.
11. A method as claimed in claim 10 in which the step of preparing the
solid solution comprises mixing powdered TeO.sub.2 and the other oxide in
powdered form, heating the mixture of powders to the melting temperature
thereof and holding the melted mixture at the melting temperature for from
3 to 4 hours, and quenching the melted mixture. |
|
|
|
|
Claims  |
|
|
Description  |
|
|
BACKGROUND OF THE INVENTION
This invention relates to an optical information storage material, and more
particularly pertains to an optical information storage material which
employs amorphous material.
Amorphous materials, which can assume two or more physical states, each of
which have different optical properties, have hitherto been known. The
state of these amorphous materials can be changed by applying electrical,
optical, or thermal energy thereto. In one state such material has a
so-called non-crystalline bulk structure which has partial order of the
atoms and molecules when viewed microscopically is seen to have a
non-crystalline structure and low optical density. In the other state the
material has a crystalline structure which has relatively high optical
density. By utilizing such optical properties, i.e. the change of state
from low optical density to high optical density or a reverse change
thereof, the amorphous materials have been able to function as an optical
information storage device when used in the form of a thin film.
Amorphous materials which have been utilized in an optical information
storage device have been such multicomponent materials as (Te, Ge), (Te,
Sb) or (Te, Ge, As, Ga, Fe).
The hitherto known materials described above are chalcogenide composites
which easily form a two-dimensionally bonded atomic configuration in a
glassy state, or are composites which are obtained by adding elements
which easily form a covalent tetrahedral atomic structure to the
chalcogenide composites.
Those composites are superior in that both crystalline and non-crystalline
states thereof are stable at room temperature. With respect to optical
sensitivity, however, those composites have insufficient sensitivity for
the use in optical information storage.
Furthermore thin films consisting of those composites have a relatively
high optical density in the non-crystalline state. Therefore, when making
record on a film with a thickness capable of giving a high contrast ratio
(e.g. >10 : 1), read-out-efficiency is relatively low i.e. < 10%.
SUMMARY OF THE INVENTION
OBJECTS OF THE INVENTION
It is an object of this invention to provide an optical information storage
material employing an amorphous film which has an improved optical
sensitiivity.
It is another object of this invention to provide an optical information
storage material employing an amorphous film which has a high contrast
ratio.
It is a further object of this invention to provide an optical information
storage material employing an amorphous film which has a low optical
density when there is nothing recorded therein.
It is a further object of this invention to provide an optical information
storage material employing an amorphous film which has a simple
composition and is easy to make.
It is a further object of this invention to provide an optical information
storage material employing an amorphous film the optical state of which is
easy to change from one state to the other, so that a recording on the
device can easily be erased.
These objects are achieved by an optical information storage material
according to the invention having a transparent base and a film deposited
on the base, the state of which can be changed between a low optical
density state and a high optical density state by the application of
electrical, optical or thermal energy. The film is a tellurium oxide
having the composition TeO.sub.x1 in which 0<x1<2.0. The film can be a
mixture of such a tellurium oxide and vanadium oxide having a compositions
VO.sub.x2 where x2 is up to 2.5 for making it easier to change the state
of the film material. The oxides are in the relation (TeO.sub.x1).sub.
1.sub.-y (VO.sub.x2) y where y is up to 0.6. The film can be a mixture of
tellurium oxide and lead oxide having a composition Pb O.sub.x3 where x3
is up to 1 for increasing the sensitivity of the film. The oxides are
present according to the formula (TeO.sub.x1).sub.1.sub.-z
(PbO.sub.x3).sub.z where z is up to 0.6. The film can be a mixture of
tellurium oxide and transition metal oxides for increasing the sensitivity
of the film.
The material is made by vacuum evaporating and depositing the tellurium
oxide or the mixture of tellurium oxide with the vanadium or lead oxide
from molten TeO.sub.2 or a molten solid solution of TeO.sub.2 and lead or
vanadium oxide.
The material can further have a transparent protective layer over the film.
BRIEF DESCRIPTION OF THE DRAWING
Other and further objects, features and advantages of the invention will
appear more fully from the following description taken with the
accompanying drawings, in which:
FIGS. 1, 3 and 5 are graphs showing the relation between light transmission
coefficient and wave length in the embodiments according to the present
invention;
FIG. 2 is a graph showing the relation between the contrast ratio and the
amount of vanadium oxide which is used as an additive in the amorphous
material according to the present invention;
FIG. 4 is a graph showing the relation between the contrast ratio and the
amount of lead oxide which is used as an additive in the amorphous
material according to the present invention; and
FIG. 6 is a cross-sectional view of an optical information storage material
according to the present invention.
FIG. 7 is a cross-sectional view illustrating a method of copying recorded
information on an optical information storage material according to the
present invention.
FIG. 8 is a side view of an optical information recording apparatus using
an optical information storage material according to this invention.
DETAILED DESCRIPTION OF THE INVENTION
Referring to FIG. 6, the optical information storage material of the
invention comprises a thin film 2 of tellurium oxide deposited on a base 1
and preferably covered with a protective layer 3 of lacquer or the like.
The composition of deposited tellurium oxide is a composition of
TeO.sub.x1 in which 0<x1<2.0. This composition is obtained by evaporation
of ordinary tellurium oxide TeO.sub.2 under deoxidizing conditions.
TeO.sub.2 is a white powder at room temperature and has a tetragonal
crystalline structure. When it is heated in air in a quartz or platinum
boat, at the melting temperature of 733.degree.C or more of the oxide,
evaporation occurs, and a vapor of TeO.sub.2 is generated. Thus, a
TeO.sub.2 film can be obtained by condensation of the evaporated oxide.
This TeO.sub.2 film, however, is not good for optical recording because it
does not have the characteristic that the optical density thereof changes.
To obtain a deoxidizing condition, vacuum evaporation is carried out and
the starting material is heated in a Mo or W boat. A vacuum of about 5
.times. 10.sup.-.sup.5 mm Hg is used, and even if the degree of vacuum is
changed, the properties of the deposited layer do not shown much
difference.
As the base for the deposition of TeO.sub.2, transparent polyester film,
polytetrafluorethylene, glass, or paper is utilized. The base can be in
any shape depending on the purpose; for example, a sheet, a drum, a disc,
etc.
The composition of the deposited film obtained by such a process is
TeO.sub.x1, wherein 0 < x1 < 2.0. This composition is different from the
starting material, TeO.sub.2 because of the reduction produced by the
vacuum evaporation.
The film of such composition is pale brown, and its light transmission
coefficient increases with lengthening of the wave length, in the range of
from 3500 A to 6500 A.
A film thickness of 300 A - 3000 A is suitable.
Optical recording on said film is carried out by Xe flash, infrared lamp,
laser, or contact heating with a heater, etc.
The sensitivity for optical recording is affected by the thermal property
of the base material. For example, the thinner the base, the greater the
sensitivity. It seems to be caused by the fact that the temperature rises
easily because of the low heat capacity thereof. Moreover, with regard to
the exposure to light, in the case of the Xe flash, recording efficiency
is increased on shortening the duration of the flash because the
heat-diffusion-loss within the base decreases.
The following examples illustrate preferred embodiments of this invention.
EXAMPLE I
TeO.sub.2 powder is used as a starting material. It is evaporation
deposited on a transparent polyester film thickness of 75.mu.; 50.mu. or
25.mu., respectively as a base. A W boat was used, and the degree of
vacuum was 5 .times. 10.sup.-.sup.5 mm Hg.
After evaporation, a transparent protective layer 3 of lacquer etc. was
deposited on the surface of the deposited layer. The material obtained by
this process was used as an optical information storage material.
FIG. 1 shows the relation between the light transmission coefficient and
wave length for the storage device of this example. In this figure, line
A.sub.1 is for the sample with nothing recorded thereon and line B.sub.1
is for the sample on which information is recorded.
This embodiment has the following advantages as compared with hitherto
known amorphous materials in a non-oxided system.
1. The sensitivity is about three times as great.
2. In the non-crystalline state, the light transmission efficiency is about
twice as great, since it has a lower optical density. This means that it
has a higher contrast ratio, about two times that of the heretofore known
material because the optical density in the crystalline state is not very
different from heretofore known material.
3. The mechanical strength is excellent because the adherence between the
amorphous film and the base is greater.
4. The optical properties are only slightly affected by ordinary light in a
room.
5. It is easy to manufacture because of the simple composition of the
amorphous material.
In an amorphous film consisting of only ordinary tellurium oxide i.e.
TeO.sub.2, it is difficult to change the physical state from the high
optical density state to the low optical density state, so that it is
difficult to erase recorded information.
To improve the erasing property, vanadium oxides such as V.sub.2 O.sub.3 or
V.sub.2 O.sub.5 can be added.
V.sub.2 O.sub.5 has a relatively low melting point (690.degree.C) and by
evaporating and condensing a solid solution or mixture thereof with
tellurium oxide, it is easy to obtain thin film.
When vanadium oxide is used as an additive, the composition of the
amorphous film is (TeO.sub.x1).sub.1.sub.-y (VO.sub.x2).sub.y in which 0 <
x.sub.2 < 2.5 and 0 < y < 0.5.
EXAMPLE II
the composition of the starting material is (TeO.sub.2).sub.1.sub.-Y
(V.sub.2 O.sub.5).sub.y, wherein 0 < Y < 0.6. The starting material is
obtained by the following steps weighing out powder i.e. TeO.sub.2 and
V.sub.2 O.sub.5 in said proportions, mixing the powders, heating them to
the liquid state in air and keeping them liquid for 3 - 4 hours in a Pt
boat, and quenching them to form a solid solution.
This solid solution is utilized as the starting material for evaporation.
Vacuum evaporation and condensation thereof on a base is carried out using
a W boat. The evaporation speed is about 20A/sec.
FIG. 2 shows the relation between contrast ration and y for said
composition. As shown in FIG. 2, the contrast ratio becomes higher when Y
increases from 0 to about 0.2, shows highest value of 10:1 for Y
.congruent. 0.2, and is very low for a value Y more than 0.5.
FIG. 3 shows relation between the light transmission coefficient and wave
length for a composition within the range of this embodiment. In this
figure, line A.sub.2 shows the relation for the sample with nothing
recorded thereon and line B.sub.2 shows the relation for the sample on
which information is recorded.
In this embodiment, state of the amorphous film in which information is
recorded can be changed to erase the information by exposure to light
having a higher energy than that of the recording.
To improve the sensitivity and the contrast ratio, lead oxide can be used
as an additive.
When lead oxide is used as an additive, the composition of the amorphous
film is (TeO.sub.x1).sub.1.sub.-Z (PbO.sub.x3).sub.Z in which 0 < X.sub.3
< 1.0 and 0 < Z < 0.5.
Such film is improved as compared with a film consisting of only tellurium
oxide in that it has a higher sensitivity, and because of a higher optical
density in the crystalline state it can have a higher contrast ratio.
EXAMPLE III
The composition of the starting material is (TeO.sub.2).sub.1.sub.-Z
(PbO).sub.Z ; wherein 0 < Z < 0.6. The starting material is obtained by
the following steps: weighing out powdered TeO.sub.2 and PbO said
proportions, mixing the powders, heating them to the liquid state in air
and keeping them in the liquid state in air for 3 - 4 hours in a Pt boat,
and then quenching them to produce a solid solution.
This solid solution is used as the starting material for evaporation and
condensation. Vacuum evaporation and condensation thereof is carried out
using a W boat. The evaporation speed is about 20 A/sec. A polyester film
with a thickness of 75 - 25.mu. is used as a base.
FIG. 4 shows the relation between values of the contrast ratio and Z for
said composition. As shown in FIG. 4, the contrast ratio becomes higher as
Z increases from 0 to about 0.1, having the highest value of 15:1 for Z
.congruent. 0.1, and is very low for a value of Y more than 0.5.
FIG. 5 shows the relation between the light transmission coefficient and
wave length for a composition within the range of this embodiment. In this
figure, line A.sub.3 the relation for a sample on which nothing has been
recorded and line B.sub.3 shows the relation for a sample on which
information has been recorded.
Transition metal oxides are effective as an additive for increasing the
sensitivity; for example, VO.sub.x2, CrO.sub.x4, MnO.sub.x5, FeO.sub.x6,
CoO.sub.x7, NiO.sub.x8, Wo.sub.x9, Tio.sub.x10, or Zro.sub.x11, in which 0
< x2 < 2.5, 0 < x4 < 1.5, 0 < x5 < 2, 0 < x6 < 1.5, 0 < x7 < 1.5, 0 < x8 <
1.5, 0 < x9 < 3, 0 < x10 < 2, and 0 < x11 < 2.
In above-mentioned transition metal oxides, VO.sub.x4, CrO.sub.x5,
MnO.sub.x6, and CoO.sub.x8, are especially effective as compared with the
other transition metal oxides.
The optical information storage material described above can be used in an
audio or video recording apparatus, data memory, or like apparatus.
Examples of such usages are illustrated in FIG. 7 and FIG. 8.
FIG. 7, the numeral 4 represents an optical information storage material
consisting of a base sheet 5 and amorphous layer 6. original picture 7 is
placed on the optical information storage material 4 in close contact
condition. The original picture 7 is formed on a transparent film such as
photographic film. From above the original picture 7, light of flash lamp
8 is directed onto picture 7. Thus the original picture is copied on the
optical information storage device 4. Referring to FIG. 8, the numeral 9
represents an optical information storage material. The numeral 10
represents a laser source. A laser beam from the laser source 10 passes
through a modulator 11, and is modulated thereby with an appropriate
information signal. Then it is reflected by a mirror 12 and is focused on
the optical information storage material 9 by a focussing lens 13. Thus
information is recorded on the optical information storage material by the
laser beam.
* * * * *
|
|
|
|
|
Description  |
|