A storage element for a digital permanent storage system having a field effect transistor, the semiconductor layer of the field effect transistor being changeable in its electrical conductivity in dependence on the state of the storage of a storage medium. The storage medium consists of an electret foil, a field effect transistor which is located on one side of the electret foil and which has been applied directly using the thin-film technique, and a glow gap on the opposite side of the electret foil. The glow gap is disposed in such a way, that in case of its ignition, depending on the polarity of the ignition voltage, the state of the charge on the side of the electret foil facing the glow gap is changed as a result of which the electrical field penetrating the semiconductor layer of the field effect transistor is changed and thus the conductivity of the semiconductor layer is changed.
A storage element for an erasable, digital, permanent storage device is disclosed in which a bipolar, charged electret serves as the storage medium. The electret has a thin conductive layer on one side and a ring electrode on the other. The state of charge of the electret is changeable to erase, or change the storage element.
