A transistor device is described in which an NPN semiconductor structure has a specially adapted N-type emitter zone and associated electrode. The emitter zone is produced by etching a cavity in one major surface of the semiconductor body followed by diffusion of N-type dopant material. Emitter, base and collector electrodes are then affixed to the appropriate surfaces of the body to provide electrical and thermal contact thereto.
Segmented power transistors and fabrication methods are disclosed in which transistor segments are spaced from one another to facilitate thermal diffusion, and in which other electrical devices can be formed in the spaces between transistor segments.
Segmented transistor devices are provided, wherein contiguous individual transistor segments extend along corresponding segment axes, in which two or more of the segment axes are at a non-zero angle with respect to one another. The segmentation of the transistor provides a high overall device aspect ratio which may be easily fit into pre-existing circuit blocks or cells in a device layout, thereby facilitating device scaling.
Segmented power transistors and fabrication methods are disclosed in which transistor segments are spaced from one another to facilitate thermal diffusion, and in which other electrical devices can be formed in the spaces between transistor segments.
A bipolar transistor is provided whose emitter surrounds the base. The transistor has in some embodiments a high ratio of the emitter area to the base area and low collector and emitter resistances. Further, a transistor is provided in which a collector contact region is surrounded by the base. Consequently, a low collector resistance is obtained in some embodiments.
A bipolar transistor is provided whose emitter surrounds the base. The transistor has in some embodiments a high ratio of the emitter area to the base area and low collector and emitter resistances. Further, a transistor is provided in which a collector contact region is surrounded by the base. Consequently, a low collector resistance is obtained in some embodiments.
