Aluminum films on a semiconductor surface are etched in a carbon tetrachloride glow discharge. Typical etch rates are 2000-3000 A/min. The addition of 15% ammonia to the plasma prevents HCl formation when the etched material is exposed to air. This process provides a more easily controlled process for the manufacture of high density integrated circuits.
This invention relates to a fine processing of aluminum and aluminum alloy layers, and to a method for dry etching by a plasma in a gas containing hydrogen and/or a gaseous hydrogen compound and further containing a gaseous chloride. The fine processing without suffering from the side-etching is feasible even in case using an inorganic material as a mask.
A dry etching device is provided in which on at least one portion of the path of etchant movement from the plasma production region to the etching workpiece a resin coating containing atoms or molecules of the same type as the chemically active atoms or molecules which constitute the etchant, is formed.
A method of improving uniformity of etching in the plasma etching of a substrate of aluminum and its alloys by supporting the substrate on a getter plate of a metal such as tantalum. The getter plate extends beyond the substrate for a distance sufficient to improve the uniformity of etching across the substrate.
This invention is concerned with providing improved surface texturing for adhesive bonding, metal bonding, substrate plating, decal substrate preparation, and biomedical implant applications. The invention is particularly concerned with epoxy bonding to polymers that typically exhibit low adhesion and bonding metals to a desired thickness to a polymer substrate. The surface 12 to be bonded is first dusted in a controlled fashion to produce a disbursed layer of fine mesh particles 14 which serve as masks. The surface texture is produced by impinging gas ions on the masked surface. The textured surface takes the form of pillars or cones. The bonding material, such as a liquid epoxy, flows between the pillars which results in a bond having increased strength. For bonding metals a thin film of metal is vapor or sputter deposited onto the textured surface. Electroplating or electroless plating is then used to increase the metal thickness to the desired amount.
A parallel-plate type gas plasma etching apparatus for etching a workpiece having a multilayer structure having a high etch rate ratio. A pair of parallel-plate electrodes are disposed in a reactor. A workpiece to be etched is disposed upon one of the electrodes. The reactor is held at a predetermined pressure and an etching gas supplied thereto. Rf power is applied between the electrodes with the positive terminal of the rf generator being coupled to the electrode upon which the workpiece is disposed. The frequency of the rf power is 10 MHz or less.
