This invention provides a signal processing circuit of a solid-state imaging device utilizing discontinuous scanning pulses having fixed interval times, and with a fixed pattern noise-eliminating circuit of high performance. In the signal processing circuit of this invention, switching elements are disposed in a feedback circuit of a signal amplifier (for example, pre-amplifier) and at an output of the signal amplifier, whereby the fixed pattern noise is suppressed so as to attain a high signal-to-noise ratio.

An image sensor chip (24) has a plurality of phototransistors (PHT) for converting light reflected by a scanned object into analog image signals, a shift register (SR) and first field effect transistors (FET.sub.1) for taking the image signals sequentially out of respective output terminals of the plurality of the phototransistors (PHT), a first pad (1) for output of the image signals taken out serially by the shift register (SR) and the first field effect transistors (FET.sub.1), an operational amplifier (OP) capable of amplifying the image signals from the plurality of phototransistors (PHT), a second pad (2) connected to an input terminal of the operating amplifier (OP), and a third pad (3) connected to an output terminal of the operating amplifier (OP).

A solid state image sensing device comprises an array of picture sensing elements which are MOS transistors formed on a bulk of semiconductor material. The transistors are of a V-MOS configuration and have respective sources, V-shaped gates, and drains. The source-to-bulk diode of a V-MOS picture sensing element functions as a photodiode and is disposed near the surface of the array to receive a respective portion of imagewise illumination. In a preferred embodiment, the drain of the V-MOS picture sensing element is buried in the bulk directly beneath its respective source. The source, in conjunction with its gate, acts as a multiplex switch for the photodiode.

An infrared random access imager system is disclosed which includes a scanning mechanism, a random access imager detector matrix, and a video signal processor. The scanning mechanism scans the infrared energy emanating from a scene in the field-of-view. The random access imager detector matrix stores charges as charge packets representative of the infrared energy impinging thereon and the video signal processor processes the charge packets into video signals. Each random access imager detector matrix element comprises a modified charge injection device, which has two electrodes per unit cell, and horizontal and vertical metal-lead address lines, to which is added a third electrode. The third electrode is a transfer gate which transfers the charge of the detector element into a read line and keeps the charge from one detector from spilling into the detector well of an adjoining unit cell. Thus, charge carriers are created by photoabsorption and collected in the detector well (storage well). Upon activation of a charge transfer electrode the charge passes over the dc transfer gate (word line) and down a read line (bit line) to an output charge collector means for processing by the signal processor.

A method of manufacturing a sensor including forming an insulating layer on top of a conductive substrate, and forming a conducting electrode on top of the insulating layer. Further, the insulating layer is formed to include support areas formed at edges of the conducting electrode and a partial area formed under the conducting electrode, and a thickness (d2) of the partial area of the insulating layer is less than a thickness (d1) of the support areas of the insulating area.