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Claims  |
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What is claimed is:
1. A method of forming a beam of particles which includes a plurality of
ions of a desired material, comprising the steps of establishing between
an axially extending anode and an axially extending cathode an electric
discharge of sufficient intensity to dissociate a gaseous compound, which
includes the desired material, into a plasma comprising various particles
including a plurality of ions of the desired material; applying a magnetic
field to said plasma; and discharging particles from the vicinity of said
anode and said cathode in the form of a beam of particles including ions
of the desired material, wherein the improvement comprises:
so disposing a pair of magnetic members, one adjacent to each axial end of
said anode, as to constrict said magnetic field at said axial ends of the
anode to increase the temperature of the plasma to a temperature above a
maximum temperature which may be achieved in the plasma in the absence of
said magnetic members.
2. A method of forming a beam of particles which includes a plurality of
ions of a desired material, comprising the steps of establishing between
an axially extending anode and an axially extending cathode an electric
discharge of sufficient intensity to dissociate a gaseous compound, which
includes the desired material, into a plasma comprising various particles
including a plurality of ions of the desired material; applying a magnetic
field to said plasma; and discharging particles from the vicinity of said
anode and said cathode in the form of a beam of particles including ions
of the desired material, wherein the improvement comprises:
so disposing a pair of electrostatic shielding members, one adjacent to
each axial end of said anode, as to electrostatically shield said axial
ends of the anode from said plasma to increase the temperature of the
plasma to a temperature above a maximum temperature which may be achieved
in the plasma in the absence of said electrostatic shielding members.
3. Apparatus for forming a beam of particles which includes a plurality of
ions of a desired material, comprising:
an axially extending anode;
an axially extending cathode;
means for introducing between the anode and the cathode a gaseous compound
which includes said desired material;
means for establishing between the anode and the cathode an electric
discharge of sufficient intensity to dissociate said gaseous compound into
a plasma which comprises various particles including a plurality of ions
of the desired material;
means for applying a magnetic field to said plasma;
a pair of magnetic members so disposed, one adjacent to each axial end of
the anode, as to constrict the magnetic field, applied by said magnetic
field applying means, at said axial ends of the anode, to increase the
temperature of said plasma above a temperature which may be achieved in
the plasma by operation of said electrical discharge establishing means
and said magnetic field applying means in the absence of said magnetic
members; and
means for discharging particles from the vicinity of said anode and said
cathode in the form of a beam of particles including ions of the desired
material.
4. Apparatus for forming a beam of particles which includes a plurality of
ions of a desired material, comprising:
an axially extending anode;
an axially extending cathode;
means for introducing between the anode and the cathode a gaseous compound
which includes said desired material;
means for establishing between the anode and the cathode an electric
discharge of sufficient intensity to dissociate said gaseous compound into
a plasma which comprises various particles including a plurality of ions
of the desired material;
means for applying a magnetic field to said plasma;
a pair of electrostatic shielding members so disposed, one adjacent to each
axial end of said anode, as to electrostatically shield said axial ends of
the anode from said plasma to increase the temperature of said plasma
above a temperature which may be achieved in the plasma by operation of
said electrical discharge establishing means and said magnetic field
applying means in the absence of said electrostatic shielding members; and
means for discharging particles from the vicinity of said anode and said
cathode in the form of a beam of particles including ions of the desird
material.
5. Apparatus as set forth in claim 4, wherein said temperature increasing
means further comprise:
means for increasing the mirror ratio of the magnetic field, applied by
said magnetic field applying means, to a value in excess of 1.2.
6. A method of plasma dissociating a gaseous compound, which includes the
material of a desired ion, in such manner as to form a beam of particles
which includes a controlled proportion of the desired ion, comprising the
steps of establishing between an anode and a cathode an electric discharge
through said gaseous compound of sufficient intensity to dissociate the
gaseous compound into a plasma comprising various particles including a
plurality of the desired ions; applying a variable magnetic field to said
plasma; adjusting said magnetic field to such intensity that the
proportion of the desired ion in the plasma attains a maximal value; and
discharging particles from the vicinity of said anode and said cathode in
the form of a beam of particles including a plurality of the desired ions,
wherein the improvement comprises:
while maintaining the magnetic field at said intensity, increasing the
temperature of the plasma such that the proportion of the desired ion in
said plasma is increased to a control value greater than said maximal
value.
7. A method as set forth in claim 6, wherein said electric discharge is
established between an axially extending anode and an axially extending
cathode, said temperature increasing step comprising:
so disposing a pair of magnetic members, one adjacent to each axial end of
said anode, as to constrict said magnetic field at said axial ends of the
anode.
8. A method as set forth in claim 6, wherein said electric discharge is
established between an axially extending anode and an axially extending
cathode, said temperature increasing step comprising:
so disposing a pair of electrostatic shielding members, one adjacent to
each axial end of said anode, as to electrostatically shield said axial
ends of the anode from said plasma.
9. A method as set forth in claim 6, wherein said temperature increasing
step comprises:
increasing the mirror ratio of said magnetic field to a value in excess of
1.2.
10. A method as set forth in claim 7 for forming a beam of particles
including singly charged boron ions by plasma dissociating a boron
trichloride gas at a temperature in excess of 0.85 eV.
11. A method as set forth in claim 7 for forming a beam of particles
including singly charged boron ions by plasma dissociating a boron
trifluoride gas at a temperature in excess of 1.0 eV. |
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Claims  |
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Description  |
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BACKGROUND OF THE INVENTION
This invention relates to ion sources, and particularly to the type of ion
source in which a compound of the material of a desired ion is dissociated
in a plasma discharge process to provide a beam of charged particles. The
beam includes the desired ions, which are generally subsequently separated
from the beam by mass-charge separation techniques. While not so limited,
the invention has particular utility in the production of singly charged
boron ions for use in ion implantation apparatus.
One problem with prior art plasma dissociation ion sources is that it has
not been known how to control fully the dissociation process, whereby the
proportion of the desired ion in the output current is generally
significantly less than what, at least, would appear to be possible. For
example, if singly charged boron ions are desired from a source gas of a
compound of boron, the total quantity of boron in the desired ionic form
has, heretofore, been significantly less than the total quantity of boron
present in the gas. That is, because it has not been known how to control
fully the extent and completeness of the dissociation process, most of the
boron present in the gas remains tied-up in non-useful molecular and
electrically neutral forms.
Thus, for the purpose of increasing the usefulness and efficiency of such
ion sources, a need exists for controlling the dissociation process for
selecting and optimizing the proportions of selected ions in the ion
source output current.
SUMMARY OF THE INVENTION
In accordance with this invention, it has been discovered that the
proportion of the various ions in the ionic output current is a function
of the ion source plasma temperature, and that a desired proportion of a
selected ion of the output current can be obtained by adjustment of the
plasma temperature. For the purpose of increasing the range of selection
of the proportions of the various ions, various means are provided for
increasing the plasma temperature beyond that which was previously
attainable in plasma dissociation ion sources.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic illustration of a prior art ion source;
FIGS. 2 and 3 are graphs showing the proportion of the various ions in the
output current from an ion source of the type shown in FIG. 1 plotted
against plasma temperature; FIG. 2 being for a source gas of boron
trifluoride, and FIG. 3 being for a source gas of boron trichloride;
FIG. 4 is a cross-sectional view of the anode of the ion source shown in
FIG. 1 and illustrating a magnetic field configuration used in accordance
with one embodiment of the invention;
FIG. 5 is a view similar to that of FIG. 1 but showing a modification of
the prior art ion source for providing the magnetic field configuration
illustrated in FIG. 4; and
FIG. 6 is a view similar to that of FIG. 4 but showing a modification of
the interior of the anode in accordance with a different embodiment of
this invention.
DETAILED DESCRIPTION
Ion sources which rely upon the plasma dissociation of a gaseous source
material are well known. With reference to FIG. 1, an example of a known
source 10 is shown as comprising a generally closed cylindrical anode 12
of, for example, graphite or tantalum, having disposed therein (see, also,
FIG. 4) an axially extending electrical resistance heated filamentary
cathode 14. The source 10 is contained in an evacuated chamber (not
shown), and a gaseous compound of the desired ionic material is flowed
through the anode between an input tubing 15 and an exit slit-like opening
16. A direct current voltage differential is established between the anode
and the cathode, the voltage being of sufficient amplitude to cause an
electric discharge through the gas between the cathode and the anode. The
electric discharge causes a dissociation of the gas into various neutral
and charged particles. The neutral particles exit as part of the gas flow
through the slit 16, and the charged particles, both positive and
negative, fill the space within the anode 12. Positively charged particles
which drift close to the slit 16 are extracted from the anode 12 and are
accelerated by an electric field external to the source 10 to provide the
beam of charged particles. The desired particles are separated from this
beam using known mass-charge separation techniques.
For increasing the number of charged particles, that is, the density of the
plasma within the anode 12, a magnet 18 is used to provide an axial
magnetic field (represented by the dashed lines 19) about and within the
anode 12. Such axial field tends to increase the path length of the plasma
electrons, and thus the plasma density, by inducing the electrons to
circle about the cathode rather than proceeding relatively directly from
the cathode towards the anode. Also, because of the flow of current along
the cathode 14, an additional magnetic field is present which causes the
electrons to drift axially along the length of the anode towards the anode
axial ends 30 where the electrons are collected. The importance of this
electron axial drift is discussed hereinafter.
As previously noted, a shortcoming of such ion sources as used in the past
is that the proportion of the desired ions in the ion beam is not
significntly controllable, with the general result that only a relatively
small quantity of the desired ions is available.
For example, a common source material for the production of singly charged
boron ions ("B.sup.+) is boron trifluoride (BF.sub.3), a gaseous material
at room temperature. (Elemental boron is not used as a source material
owing to its high vaporization temperature.) Mass spectrographic analysis
of the ionic beam produced using this source material reveals the presence
of the desired boron ions, but also such ions as BF.sup.+ and BF.sub.2 +,
with the proportion of the desired singly charged boron ions to the total
beam current (depending upon the particular ion source used) being
generally less than 15 percent. That is, although the ion current contains
much boron, much of it is tied up with fluorine atoms in non-useful forms.
In accordance with this invention, it has been discovered that the
proportion of the various ions in the ion beam is a function of the
temperature of the ion source plasma, and that the proportion of a
selected ion of the beam current can be optimized to an extent not
heretofore possible by control and selection of the plasma temperature.
This is explained as follows.
In the plasma dissociation process, various collisions occur among the gas
molecules and fragments thereof, and between the plasma electrons and the
gas particles. While both types of collisions cause fragmentation of the
gas molecules, it is believed that only electron collisions cause
ionization of the particles.
The output beam from the ion source contains all the different positive
ions produced in the dissociation process. I have demonstrated, however,
that the proportion of these different ions in the beam depends upon the
statistical probability or rate of occurrence of the different types of
possible collisions, that is, upon the probability that certain fragments
will be produced in the dissociation process, and upon the probability
that these fragments will collide with electrons of sufficient energy to
cause ionization thereof. Such probabilities, in turn, are a function of
the dissociation and ionization energies of the impacted particles and a
function of the energy of the impacting electrons. Thus, for a given
source material, the probability of the occurrence of various collisions,
and thus the degree of dissociation and ionization of the source gas, is a
function of the energy distribution of the plasma electrons, that is, of
the plasma temperature (kT, where K = Boltzmann's constant and T =
temperature in degrees kelvin).
This is illustrated in FIGS. 2 and 3 which show the proportional
composition of the ion beam from an ion source of the type shown in FIG. 1
plotted against the plasma temperature in electron volts. FIG. 2 is for a
source material of boron trifluoride, and FIG. 3 is for boron trichloride.
The data for these graphs were derived mathematically, and owing to
certain assumptions made to simplify the calculations, it is expected that
certain inaccuracies exist. Experimental data do exist, however, which
support the general validity of the relationships shown. Thus, based upon
these graphs, a desired proportion of any ion in the ion beam can be
obtained, within the possible range of proportions of the ion, by
adjusting the temperature of the plasma to the corresponding plasma
temperature indicated on the graph. Thus, for example, from the graph of
FIG. 3, it is determined that the maximum proportion of singly charged
chlorine ions (Cl.sup.+) in an ion beam produced from a source gas of
boron trichloride is obtained at a plasma temperature of about 1.0 eV.
Similarly, the curves representing the proportions of singly charged boron
ions (B.sup.+) begin peaking at a plasma temperature of about 1.5 eV for
both source gases (FIGS. 2 and 3).
At relatively low plasma temperatures, such as below about 1.0 eV, the
plasma temperature can be adjusted by varying the axial magnetic field
strength and/or the anode to cathode discharge voltage. Because the plasma
temperature is not strictly an independent variable, being a function of
the plasma density and the particular source gas material used, a trial
and error plasma temperature varying process can be used.
It is noted that adjustments of the axial magnetic field strength and
discharge voltage amplitude have been made in the past for maximizing the
quantity of the desired ion in the output current of the prior art ion
sources of the type shown in FIG. 1. To my knowledge, however, it has not
been heretofore recognized that these adjustments cause variations in the
plasma temperature, or that any particular proportion of ions can be
selected by proper adjustment of the plasma temperature. Also, I have
determined that the maximum plasma temperature obtainable solely by virtue
of adjustments of these parameters is relatively low, whereby the degree
of control over the output current proportions has heretofore been quite
limited. An important feature of this invention, therefore, is the
development of techniques for increasing the maximum attainable plasma
temperatures in plasma dissociation ion sources. One such means for
increasing the plasma temperature is as follows.
As previously noted, the plasma electrons tend to drift axially along the
length of the anode 12. Those electrons which reach the anode axial ends
30 are collected by the anode and are thus removed from the plasma.
Because the electrons of highest energy and thus of highest velocity drift
the fastest, the higher energy electrons are removed more quickly from the
plasma than the lower energy electrons. The result of this is that a
disproportionately large number of higher energy electrons is removed from
the plasma by collection at the anode axial ends. This tends to reduce the
energy distribution of the electrons of the plasma and thus reduce the
plasma temperature. Accordingly, one means for increasing the plasma
temperature is to reduce the collection of electrons at the anode axial
ends.
In accordance with one embodiment of this invention, this is accomplished
by modifying the shape of the magnetic field to improve the magnetic
"bottle" characteristics of the field. This is illustrated in FIG. 4 which
shows a magnetic field (indicated by the dashed lines 32) which is more
concentrated or constricted at the axial ends 30 of the anode 12 than at
the center thereof. The effect of such a magnetic field shape, as is
generally known, is to turn back or "reflect" electrons which are drifting
from the central, lower strength regions of the field towards the higher
strength axial ends of the field. Thus, as used in the embodiment of the
invention shown in FIG. 4, the end constricted magnetic field tends to
reduce the drift of electrons towards the axial ends of the anode 12 and
to thus reduce the collection of electrons thereat. As aforenoted, such
reduction of electron collection causes an increase in the temperature of
the plasma.
The greater the ratio of magnetic field strength at the axial ends of the
anode to the strength at the center thereof, the more efficient is the
magnetic field "bottle" with respect to increasing the plasma temperature.
This ratio is known as the "mirror" ratio.
One means for providing the desired constricted magnetic field of the shape
shown in FIG. 4 is by the use of two discs 34 (FIG. 5) of magnetic
material, such as steel, disposed closely adjacent to each axial end 30 of
the anode 12. The constricting effect of the discs 34 on the magnetic
field produced by the magnet 18 is evident by comparison of the
arrangement shown in FIG. 5 with the prior art arrangement shown in FIG.
1. The mirror ratio of the magnetic field in the arrangement shown in FIG.
5 is 1.35, whereas the mirror ratio of the prior art arrangement shown in
FIG. 1 is 1.17.
The actual increase in plasma temperature caused by the increased mirror
ratio is a function of the particular source material used, hence no
generalized figures can be given. An example of such increase, however, is
as follows.
In use of the prior art ion source 10 shown in FIG. 1, the maximum content
of the singly charged boron ion in the output beam heretofore obtainable
is about 15 percent with a source gas of boron trifluoride, and about 6
percent with a source gas of boron trichloride. These boron contents
correspond to a plasma temperature of about 1.0 eV with the boron
trifluoride source gas (FIG. 2), and about 0.85 eV (FIG. 3) with the boron
trichloride source gas. In use of the ion source shown in FIGS. 4 and 5,
however, the proportion of singly charged boron ions in the output beam is
increased to about 25 percent for the boron trifluoride source gas and to
about 10 percent for the boron trichloride source gas. These increases in
the proportion of the boron ions in the two output currents correspond to
an increase of plasma temperature of about 0.1 eV.
A means for further improving the mirror ratio of magnetic fields for
increasing the plasma temperature in ion sources of the type herein
described is the substitution of two disc-like permanent magnets (not
illustrated) for the steel discs 34 shown in FIG. 5. By proper spacing of
such permanent magnets (which would also replace the external magnet 18),
a mirror ratio of about 15 is considered possible. An example of such
proper spacing is provided hereinafter.
A difficulty with the disc permanent magnet arrangement, however, is that
by disposing the permanent magnets close to the anode 12, in order to
obtain the necessary magnetic field shaping, the magnets are subject to
being heated by radiation from the anode which operates at a quite high
temperature. Thus, unless special precautions are taken, such as water
cooling of the permanent magnets, overheating of the magnets and
destruction of the magnetic properties thereof can occur.
Another means believed effective for increasing the plasma temperature is,
as shown in FIG. 6, the mounting of refractory metal shields 36, for
example, of tantalum, directly on the filament 14 inside of and closely
adjacent to the axial ends 30 of the anode 12.
In use, the shields 36, at filament potential, electrostatically shield the
anode axial ends 30 from the plasma and thus reduce the collection of
electrons by these portions of the anode. Accordingly, for the same
reasons previously described in connection with the description of the
embodiment of the invention shown in FIG. 4, the plasma temperature is
increased.
Each of the aforedescribed embodiments of the invention is effective to
increase the maximum attainable plasma temperature. Such maximum plasma
temperatures are obtained at an optimum setting, determined by a trial and
error process, of the magnetic field strength and the anode to cathode
discharge voltage. Adjustment of the plasma temperature to less than the
maximum possible temperature is possible by adjustments away from the
optimum settings of the magnetic field strength and/or the discharge
voltage. Thus, in accordance with this invention, there is made available
in the use of ion sources of the type described an increased range of
possible operating plasma temperatures, thereby increasing the range of
attainable proportions of the various ions in the source output current.
As previously noted, in use of the ion source 10 shown in FIG. 1 according
to the prior art, the maximum plasma temperature heretofore obtainable is
about 1.0 eV with a source gas of boron trifluoride and about 0.85 eV with
a source gas of boron trichloride. An examination of FIGS. 2 and 3,
however, reveals that substantial increases in the proportion of singly
charged boron ions in the output current are obtainable if higher plasma
temperatures are used. Accordingly, one important use of this invention is
the attainment of higher proportions of singly charged boron ions from ion
sources of the type described by providing means for increasing the plasma
temperature of the ion source beyond that which was previously possible.
In particular, increases in the plasma temperature, and corresponding
increases of the boron ion content of the output beam are obtained,
according to one aspect of this invention, by the use of magnetic fields
having a mirror ratio in excess of 1.2. Stated on a different basis,
increases in the boron ion proportions are obtained by the use of plasma
temperatures in excess of 1.0 eV with a source gas of boron trifluoride
and in excess of 0.85 eV with a source gas of boron trichloride.
With reference again to the embodiment of the invention shown in FIG. 5, it
is noted that, with the exception of the inclusion of the magnetic
material discs 34, the ion source is identical to the prior art ion source
10 shown in FIG. 1. By way of specific example, in one embodiment of the
inventive ion source shown in FIG. 5, the anode 12 has a length of about
three inches (7.5 cm) and a diameter of about one inch (2.54 cm). The
magnets 18 have a diameter of about four inches (10 cm), and are spaced
about three inches (7.5 cm) from the axial ends 30 of the anode 12. The
discs 34 have a thickness of about 1/4 inch (0.62 cm), a diameter of about
11/2 inch (3.75 cm), and are spaced about 3/4 inch (1.8 cm) from the
anode.
In the aforedescribed embodiment in which permanent magnet discs are
substituted for the steel discs 34, the permanent magnets can be of
identical dimensions and spacings from the anode 12 as aforedescribed for
the discs 34.
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Description  |
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