An optoelectronic memory comprising the following elements placed one after another in succession downstream the original beam from the source of electromagnetic radiation: a means for scanning the original beam, which is electrically connected to an address register, a means for splitting the original beam into m beams forming a scan pattern and a focusing lens. The focusing lens is followed by n beam splitters whose number along each beam direction is equal. The memory also comprises .vertline.n+1.vertline. information memory plates each being positioned at a focal distance from the focusing lens and carrying m memory modules arranged upon the surface facing the beam. The memory modules are made as multilayer structures comprising the following elements placed downstream the beam: a transparent electrode electrically connected to the output of an information recording register, layers of at least two dielectrics and a semiconductor and an electrode electrically connected to the input of the information readout register.
Two electro-optical computer interface embodiments provide for one-way read only and two-way optical read and write. The two-way embodiment includes a main module having a shared memory, and a processor/controller and a main bus. A plurality of local processor modules each includes a local memory, a local processor, and a local bus. The processors are electrically joined by control conductors which provide for coordination and timing between local processors and the main processor. Each memory array has a film deposited on it by the Langmuir/Blodgett technique. The memory arrays are each illuminated by a pulsed laser or Q-switched laser. The film is responsive to the electric fields in the memory array cells for modulating the illumination light. The image is then read onto other memory arrays which are responsive to the illumination for transferring the data between memories.
Lead-free phosphate glass compositions are provided which can be used to immobilize low level and/or high level radioactive wastes in monolithic waste forms. The glass composition may also be used without waste contained therein. Lead-free phosphate glass compositions prepared at about 900.degree. C. include mixtures from about 1 mole % to about 6 mole % iron (III) oxide, from about 1 mole % to about 6 mole % aluminum oxide, from about 15 mole % to about 20 mole % sodium oxide or potassium oxide, and from about 30 mole % to about 60 mole % phosphate. The invention also provides phosphate, lead-free glass ceramic glass compositions which are prepared from about 400.degree. C. to about 450.degree. C. and which includes from about 3 mole % to about 6 mole % sodium oxide, from about 20 mole % to about 50 mole % tin oxide, from about 30 mole % to about 70 mole % phosphate, from about 3 mole % to about 6 mole % aluminum oxide, from about 3 mole % to about 8 mole % silicon oxide, from about 0.5 mole % to about 2 mole % iron (III) oxide and from about 3 mole % to about 6 mole % potassium oxide. Method of making lead-free phosphate glasses are also provided.
