Field effect transistor device means of the bilateral insulated gate type have been disclosed as power switches that are capable of being switched between a conductive and a non-conductive state. A means for deriving energy for the operation of the field effect transistor devices has been disclosed which is wholly independent of current drawn through the substrate electrode means of the field effect transistor devices themselves, and which is capable of use in multiple control systems applications.

Extension directions of source electrode layer and a drain electrode are parallel to rows or columns of an array of alternately arranged source regions and drain regions, thereby forming widths of source and drain electrode layers wider than those of a conventional transistor to obtain a large mutual conductance.

Lateral FET structure is disclosed for bidirectional power switching. A split gate structure is provided to prevent unwanted formation of potential conduction channels in the OFF state of the FET. This enables the gate to be referenced in common to one of the source regions in the OFF state while still affording high blocking voltage capability. A multicell matrix array is also disclosed.

A monolithic integrated circuit D-to-A converter and programmable AC resistor network and current source is disclosed in which an array of FET cells formed on a semiconductor body is divided into a plurality of distinct sets which may be grouped in two groups of corresponding sets. The source and drain regions respectively of all of the cells in each group are connected in common. The gate regions of the cells in each distinct set are also connected. In embodiments comprising two groups of cells, gate control logic is included which may supply signals of opposite binary states respectively to the gate regions of corresponding sets of cells in the two groups.

Lateral FET structure is disclosed for bidirectional power switching, including AC application. A notch extends downwardly from a top major surface to separate left and right source regions and left and right channel regions, and direct the drift region current path between the channels around the bottom of the notch. Gate electrode means in the notch proximate the channels controls bidirectional conduction.