A photosensor including a fiber substrate having a light receiving window formed in a surface thereof spaced from an information surface to be read, a bundle of optical fibers disposed in the fiber substrate and positioned in the light receiving window. A plurality of color filters of different characteristics are disposed on an end face of the bundle of optical fibers, and a plurality of arrays of photosensitive elements corresponding to the color filters are also provided. The arrays of photosensitive elements are integrally provided with the fiber substrate and disposed in the region of the end face of the bundle of the optical fibers farthest away from the information surface.
A reading optical system comprises a transparent block a part of whose bottom surface is an inclined surface forming an angle with respect to the horizontal plane, combined light-guides embedded in the block and having one end thereof all disposed on the intermediate portion of the inclined surface spaced apart by a predetermined distance from the lower end of the inclined surface and the other end extending on the upper surface of the block, a light sensor installed on the upper surface of the block in opposed relationship with the other end of the combined light-guides, and an illuminating system for illuminating the vicinity of the surface of an original opposed to the one end of the combined light-guides, through the block.
A low-priced contact type color image sensor formed without the need to provide color filters on a linear image sensor. The color filters are formed on a surface of a document side of a transparent protective glass in direct contact with a document for flattening the light irradiation surface, such that the pitch thereof is equal to that of light receiving elements of a linear image sensor.
In a semiconductor photo-detector of the present invention, a first semiconductor layer, a second semiconductor layer having, and a photo-absorption part composed of a photo-absorption layer sandwiched between these layers are disposed on a substrate, at least the photo-absorption layer is formed at a position apart inwardly by a finite length from an end surface of the substrate, an end surface of the second semiconductor layer and the substrate or the end surface of the substrate is provided with a light incident facet angled inwardly as it separates from the surface of the second semiconductor or the surface of the substrate. Further, a groove as a guide of an optical waveguide for guiding incident light is disposed opposing the light incident facet, or the substrate end surface at the light incident facet side is protruded by a finite length from a tip part of the light incident facet, or between the optical waveguide and the semiconductor photo-detector is buried in a solid or liquid, or a main reaching area of incident light refracted at an upper layer of the photo-absorption layer is terminated with a substance having a smaller refractive index than the semiconductor layer of photo-absorption region part, or the light incident facet and its vicinity are buried in an organic substance.
In a semiconductor photo-detector of the present invention, a first semiconductor layer, a second semiconductor layer having, and a photo-absorption part composed of a photo-absorption layer sandwiched between these layers are disposed on a substrate, at least the photo-absorption layer is formed at a position apart inwardly by a finite length from an end surface of the substrate, an end surface of the second semiconductor layer and the substrate or the end surface of the substrate is provided with a light incident facet angled inwardly as it separates from the surface of the second semiconductor or the surface of the substrate. Further, a groove as a guide of an optical waveguide for guiding incident light is disposed opposing the light incident facet, or the substrate end surface at the light incident facet side is protruded by a finite length from a tip part of the light incident facet, or between the optical waveguide and the semiconductor photo-detector is buried in a solid or liquid, or a main reaching area of incident light refracted at an upper layer of the photo-absorption layer is terminated with a substance having a smaller refractive index than the semiconductor layer of photo-absorption region part, or the light incident facet and its vicinity are buried in an organic substance.
A direct optical connector (DOC) comprised of first and second members, each including a plurality of light emitting and light detecting locations, operative in combination with energy transfer media to form direct optical connections between the light emitting locations and the light detecting locations, wherein said first and second members are adapted for reclosable connection to each other whereupon the light emitting locations on one member are aligned with the light detecting locations on the other member. The first and second members of the preferred DOC are modular. Alternative forms of energy transfer media are used in various embodiments of the invention including lenslet arrays, imaging fiber plates (IFPs), and energy transfer fiber plates (ETFPs). These media have differing alignment criteria, differing degrees of immunity from crosstalk, differing degrees of transfer efficiency, different manufacturing costs, etc., thereby permitting the fabrication and/or use of a connector most suited to meet the requirements of a particular application. A modular half of a DOC can be used in conjunction with a remote optical connector (ROC) to channel light over relatively long distances. The invention also encompasses processes for fabricating ROCs.
