or
Bookmark and Share
Temperature compensated bandgap IC voltage references
   
Document Number
US Patent 4249122
Issued Date
February 3, 1981
Link
Inventors
Widlar; Robert J. (Puerto Vallarta,MX)
Map
Abstract
Bandgap voltage reference circuits have been developed for integrated circuit applications. Typically, a negative temperature coefficient first voltage is developed related to the base to emitter potential of a transistor. A positive temperature coefficient second voltage related to the difference in base to emitter potential between two transistors operating at different current densities is developed and combined with the first voltage so as to produce a temperature compensated reference voltage. Such first order compensation leaves second order effects uncompensated. In the invention, a third voltage having a suitable temperature coefficient is combined with the first and second voltages so that the resultant reference voltage is compensated to a second order.
Drawing
Temperature compensated bandgap IC voltage references - US Patent 4249122 Drawing
Drawing from US Patent 4249122
Tags:
Description:
Amusing 0%
Clever 0%
Complex 0%
Efficient 0%
Historic 0%
Important 0%
Innovative 0%
Interesting 0%
Practical 0%
Simple 0%
Number of Claims:
8
Comments:
no comments yet
Owner
Published
February 3, 1981
Application Number
05/928,631
Filed
July 27, 1978
US Classification
323/313   330/297
Int'l Classification
G05F   3/08   (20060101)   G05F   3/30   (20060101)  
Examiner
USPTO Field of Search
307/296R   307/297   330/296   330/297   323/1   323/4   323/8   323/19   323/22T   323/68  
Related Patents
4656415 - Circuit for generating a reference voltage which is independent of temperature and supply voltage - Owned by Siemens Aktiengesellschaft (Berlin and Munich,DE)

A circuit for generating a reference voltage which is independent of temperature and supply voltage includes a bandgap stage supplying the reference voltage, a first circuit receiving the supply voltage and generating an output voltage being substantially free of variations in the supply voltage, and a second circuit connected to the first circuit and driven by the output voltage, the second circuit being connected to the bandgap stage for supplying a current to the bandgap stage having a characteristic for compensating and eliminating temperature dependencies in the bandgap stage.

4490669 - Circuit configuration for generating a temperature-independent reference voltage - Owned by Siemens Aktiengesellschaft (Berlin and Munich,DE)

Bandgap circuit for generating a temperature-independent reference voltage, including a diode-resistance path at which a temperature-independent reference voltage corresponding to the energy gap of semiconductor material of components used in the circuit is available, the diode-resistance path including a diode and a series circuit of at least two resistors being connected in parallel with the diode, a temperature-independent reference voltage which is independent of the energy gap of the semiconductor material being available at one of the resistors.

4628248 - NPN bandgap voltage generator - Owned by Motorola, Inc. (Schaumburg, IL)

An all NPN bandgap voltage reference is provided that includes a Widlar type temperature coefficient compensation circuit. A pair of NPN differentially connected transistors maintain a constant current in the Widlar circuit over variations in power supply voltage V.sub.EE while causing an increase in current in the Widlar circuit as temperature increases for maintaining a constant output voltage.

5051686 - Bandgap voltage reference - Owned by Maxim Integrated Products (Sunnyvale, CA)

A bandgap voltage reference of a unique design is disclosed. The reference utilizes a pair of transistors operating at different current densities to provide a current component through a resistor at the .DELTA.V.sub.BE of the two transistors. A second current component through the resistor is provided through another resistor connected to the common emitter connection of another pair of transistors, the collectors of the last named pair of transistors each being connected to one input of a operational amplifier, the output of which is the output of the circuit. In operation, the base of one of the last named pair of transistors is connected to a resistor divider on the circuit output and held at the bandgap voltage, the base of the other of the last named pair of transistors also being held at the bandgap voltage by being connected to a resistor divider between the collector of one of the two transistors operating at different current densities and the emitter of a fifth transistor, the base of the fifth transistor being connected to the resistor divider on the circuit output at a point corresponding to a voltage of two bandgap voltages. By proper selection of transistor size ratios and resistor ratios, a high degree of symmetry can be achieved.

6232828 - Bandgap-based reference voltage generator circuit with reduced temperature coefficient - Owned by National Semiconductor Corporation (Santa Clara, CA)

A bandgap-based reference voltage generator circuit with an increased output reference voltage and a reduced temperature coefficient uses a curvature correction bias voltage to significantly reduce the degree of variation of the bandgap-based reference voltage over temperature. A current having a negative temperature coefficient is conducted by a resistor having a positive temperature coefficient. The resultant voltage across the resistor has an arcuate voltage-versus-temperature characteristic with a direction of incurvature that is substantially opposite the direction of incurvature of the corresponding arcuate voltage-versus-temperature characteristic of the voltage generated by a conventional bandgap reference voltage generator circuit. These voltages are summed together to produce a bandgap-based reference voltage which is greater in magnitude than a conventional bandgap reference voltage and has a significantly reduced temperature coefficient.

Claims
Description
About| FAQs| Terms & Disclaimer| Link to Us| Contact Us