A process for preparing an infrared sensitive photodiode comprising the ss of (1) forming by vacuum deposition an epitaxial layer of a semiconductor alloy material which is PbS, PbSe, PbTe, PbS.sub.x Se.sub.1-x, PbS.sub.x Te.sub.1-x, PbSe.sub.x Te.sub.1-x, Pb.sub.y Sn.sub.1-y S, Pb.sub.y Sn.sub.1-y Se, Pb.sub.y Sn.sub.1-y Te, Pb.sub.y Sn.sub.1-y S.sub.x Se.sub.1-x, Pb.sub.y Sn.sub.1-y S.sub.x Te.sub.1-x, Pb.sub.y Sn.sub.1-y Se.sub.x Te.sub.1-x, Pb.sub.z Cd.sub.1-z S, Pb.sub.z Cd.sub.1-z Se, Pb.sub.z Cd.sub.1-z Te, Pb.sub.z Cd.sub.1-z S.sub.x Se.sub.1-x, Pb.sub.z Cd.sub.1-z S.sub.x Te.sub.1-x, or Pb.sub.z Cd.sub.1-z Se.sub.x Te.sub.1-x, wherein 0<x<1, 0<y<1, and 0<z<1, to cover at least a portion of the surface of a substrate composed of an infrared transparent single crystal material which is an alkali halide or an alkaline earth halide; (2) forming a layer of a lead halide which is PbCl.sub.2, PbBr.sub.2, PbF.sub.2, or mixtures thereof on the epitaxial layer of semiconductor material by exposing the epitaxial layer to vapor of the lead halide in air for at least 6 hours wherein the lead halide vapor is produced by heating the lead halide at a temperature of from about 175.degree. C. to about 225.degree. C.; (3) vacuum depositing Pb metal onto a portion of the epitaxial layer of semiconductor alloy material to form a non-Ohmic Pb metal contact; and (4) forming an Ohmic contact on another portion of the epitaxial layer of semiconductor material.

A method of forming a PSG layer on a semiconductor substrate containing semiconductor elements by chemical vapor deposition is characterized in that the concentration of the PSG layer is gradually increased from the substrate surface toward the uppermost surface of the PSG layer.

An infrared sensitive photodiode which is made of an epitaxial layer of a miconductor alloy which is a lead chalcogenide, a lead-tin chalcogenide, or a lead-cadmium chalcogenide grown on a single crystal substrate of an infrared transparent, electrically insulating material, an Ohmic contact deposited on the epitaxial layer, and a non-Ohmic Pb metal contact deposited on the epitaxial layer to form a Schottky barrier, the improvement comprising the inclusion of halide ions in the interface region between the non-Ohmic lead metal contact and the epitaxial layer of semiconductor material.

A method of manufacturing a semiconductor device by the use of a Group II-VI compound semiconductor crystal prepared by liquid growth method using a temperature difference technique under controlled vapor pressure of the crystal-constituting Group VI element. Thus, the concentration of vacancies and other defects acting as donor is reduced as compared with the concentration of the p type impurity to be introduced. This invention is suitable for producing light-emitting diodes emitting a light of short-wave lengths.

Disclosed is an X-ray detector assembly for use in a computed tomography system. The X-ray detector assembly comprises an array of detector cells coupled between two rails. A thermoelectric cooler is coupled to an end of each of the rails, and is controlled to alternatively heat or cool the detector array to maintain the array in a substantially isothermal and thermally stable condition. The detector assembly preferably includes both passive and active cooling devices and insulation materials for controlling the temperature of the detector assembly. An electrical heater coupled at the center of the detector array can be used in conjunction with the TEC's to control the temperature profile of the detector array, and to minimize changes in the temperature gradients.