A decoder for address inputs to a semiconductor memory or the like comprises a NOR gate having a number of parallel input transistors corresponding to the number of address bits to be decoded. The address bits and their complements are selectively connected to the gates of the input transistors and the sources of these transistors, rather than only to the gates as in prior decoders. The layout of this decoder more nearly matches the pitch of rows in a high density dynamic RAM.
A metal-insulator semiconductor dynamic memory device comprising sense amplifiers arrayed on a semiconductor substrate and column decoders. Each of the column decode being provided for a plurality of sense amplifiers and selecting one or more sense amplifiers from the plurality of sense amplifiers, the column decoders being dispersed on both sides of the arrayed sense amplifiers. A plurality of control signal lines which, in order to select the sense amplifiers, control gate elements connected between bit lines connected to the sense amplifiers and data bus lines and which are disposed on both sides of the arrayed sense amplifiers. Conducting lines are also disposed between the sense amplifiers and deliver signals from the control signal lines, for selecting sense amplifiers to the gate elements on the opposite side of the control signal lines with regard to the arrayed sense amplifiers.
A word decoder for a memory array includes a decode NOR/OR circuit 52 coupled to an output driver circuit 54. Decode NOR/OR circuit 52 includes a plurality of input signals IN1, IN2, IN3 connected to respective input n-channel field effect transistor (NEFTs) N1, N2, N3, all of which are parallel to a common node 1. The first input IN1 is also connected to a an active pull-up p-channel field effect transistor (PFETs) P1 which is in series with the first NFET N1 and always maintained slightly on. A bipolar transistor T4 pulls down node 1 and a pair of bleeder NFETs N4, N5 pull down nodes 3 and 2, respectively. Output driver circuit 54 is comprised of bipolar transistors T1, T2, T3 arranged in a push-pull configuration.
A bit decoder for a memory array includes a decode NOR/OR circuit coupled to an output driver circuit. The decode NOR/OR circuit includes a plurality of input signals connected to respective input FET's all of which are connected in parallel between a common source and a common drain node. One input is also connected to an active pullup FET which is connected in series with the input FET's at the common drain node and which is always maintained slightly on. A bipolar transistor pulls down the common drain node and a bleeder FET pulls down the common source node. The output driver is a BICMOS circuit that provides both the bit selection and bit refresh signals which are of opposite phase.
