A process for coating a wide moving web with the product of chemical reactants first brought into contact at a point proximate the glass surface. The process comprises a primary distribution of reactants (across the width of the substrate) through a row of small apertures, then a segregation through a secondary passage to a reaction zone at the surface of the substrate. Reactant distribution pipes are advantageously positioned and shaped to form only a gradual increase in width of the reactant flow path as they enter the reaction zone.
RELATED APPLICATION
This application is a divisional of U.S. application Ser. No. 521,675 filed Aug. 10, 1983 by Roy G. Gordon entitled Reactor for Continuous Coating of Glass, U.S. Pat. No. 4,524,718, which was in turn a continuation-in-part of U.S. application Ser. No. 443,340 filed Nov. 22, 1982 by Roy G. Gordon entitled Chemical Vapor Deposition of Titanium Nitride and Like Films, now abandoned.
A process for depositing a film of metal pnictogenide. The process comprises providing a single source of a metal pnictogenide and heating said source to a temperature sufficient to sublime the single source at a pressure selected from a range of about 0.0001 to 760 torr so that a sublimate is delivered into a reaction zone. Within this reaction zone, a substrate is provided upon which deposition may occur. The reaction zone is heated to approximately 200.degree.-800.degree. C. The sublimate is passed through this reaction zone and over the substrate to produce a thin film of metal pnictogenide which is deposited upon the substrate.
The present invention concerns a process to produce a high surface area niobium oxynitride, tantalum oxynitride, vanadium oxynitride, zirconium oxynitride, titanium oxynitride or molybdenum oxynitride coated substrate for use as an electrical energy storage component in a capacitor or a battery configuration. The process relates to: (a) coating one or both flat etched surfaces of a solid substrate, in the form of a thin sheet, with a solution or a slurry of a metal halide in a liquid volatile carrier to produce a thin surface film; (b) contacting the metal halide surface film-carrier coated substrate of step (a) with oxygen, air, or combinations thereof at a temperature to convert the metal halide to metal oxide, respectively, as a thin film and to remove the liquid volatile carrier; (c) repeating steps (a) and (b) to obtain a desired thickness; (d) heating the metal oxide film coated substrate of step (c) in oxygen, air or combinations thereof to convert at least about 95% of the metal chloride to metal oxide; (e) increasing the temperature of the metal oxide coated substrate to elevated temperatures; (f) contacting the oxide coated substrate produced in step (e) with a nitrogen source selected from excess flowing gaseous ammonia, a mixture of ammonia gas and hydrogen gas, or a mixture of hydrogen gas and nitrogen gas at elevated temperatures to convert about 95% or greater of the oxide coating to the corresponding metal oxynitride on the substrate, which metal oxynitride layer has a high surface area and is electrically conductive; and (g) cooling to ambient temperature and recovering the high surface area metal oxynitride coated substrate produced in step (f).
