A method of manufacturing an electrophotographic photoreceptor having an amorphous silicon layer formed as a photoconductive layer, on an electrically conductive support member. The manufacturing method includes the steps of preparing the amorphous silicon layer as the photoconductive layer by employing Si.sub.2 H.sub.6 (disilane) as a main raw material gas through a glow discharge process, and simultaneously, adding nitrogen and boron to the main raw material gas, with the unsaturated bond being stabilized by hydrogen or hydrogen and fluorine.
A manufacturing method of a gate electrode is described. A plurality of undoped amorphous silicon layers and a plurality of doped amorphous silicon layers are alternately formed on a substrate.
A high quality non-single-crystal silicon alloy material including regions of intermediate range order (IRO) silicon alloy material up to but not including the volume percentage required to form a percolation path within the material. The remainder of the material being either amorphous or a mixture of amorphous and microcrystalline materials. The materials were prepared by CVD using differing amounts of hydrogen dilution to produce materials containing differing amounts of IRO material. Preferably the material includes at least 8 volume percent of IRO material.
