Stabilization of energy sensitive semiconductive devices by forming initial electrodes which are exposed through an overlying layer of semiconductor, dipping the exposed electrodes in solutions containing specified chemicals, such as metallic ion solutions of nickel, cobalt, chromium and related metals, followed by rinsing, drying and the final deposition of an overlying electrode by metallization.
Stabilization of energy sensitive semiconductor devices by forming initial electrodes which are exposed through an overlying layer of semiconductor, dipping the exposed electrodes in solutions containing specified chemicals, such as metallic ion solutions of nickel, cobalt, chromium and related metals, followed by rinsing, drying, and the final deposition of an overlying electrode by metallization.
Stabilization of energy sensitive semiconductive devices by forming initial electrodes which are exposed through an overlying layer of semiconductor, dipping the exposed first electrode and the semiconductor layer in colloidal solutions, or well stirred suspensions of specified metal hydroxides, such as those of nickel, chromium, cobalt or related metals, followed by rinsing the non-sensitive side of the device in de-ionized water. After air drying, the deposition of an overlying second electrode is carried out by a metallization technique. The device is then heated in air, at 150.degree. C. for four hours.
An integrated solar cell device characterized in that a plurality of amorphous silicon solar cells, each having a transparent electrode on the light impinging side and a metal electrode on the side opposite of the light impinging side, are placed on a transparent substrate. The plurality of solar cells are connected in series or series-parallel using the transparent electrodes and the metal electrodes thereof, wherein at least a conductive anti-oxidation film is formed at the series connection part between the transparent electrode and the metal electrode. According to the integrated solar cell device of the present invention, the transparent electrode is prevented from oxidizing the metal electrode, so that the contact resistance is prevented from increasing and the output of the solar cell device can be prevented from decreasing. Consequently, the life of the solar cell device is extended, such that the output of the solar cell device can be maintained in the designed range for a long period.
A solar cell has a high ability to prevent recombination of electrons near the cell surface, wherein a surface of a p-type substrate at a surface is provided with an n-type region subjected to a treatment with a phosphorus containing acid and a silicon nitride layer is then directly formed on the n-type region. The solar cell can be prepared at a low temperature by a method comprising 1) a step of subjecting the n-type region to a phosphorus containing acid treatment at a low temperature and 2) a step of forming a silicon nitride by a vacuum and thermal CVD method.
The electro-migration of electrode metal takes place under an elevated temperature condition in amorphous silicon devices having conventional PI-type, NI-type, or PIN-type hydrogenated amorphous silicon layered structures, which substantially degrades the electrical characteristics of the devices. This problem is solved by forming a chemically inactive layer consisting mainly of amorphous silicon oxide on the surface of amorphous silicon layer by an aqueous washing and drying process, to establish electrical contacts through the chemically inactive layer between the hydrogenated amorphous silicon layer and either a collector electrode or a transparent electrode. This structure not only prevents such electromigration of electrode metal, but it also allows a greater freedom for choosing a material for the collector electrode.
