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CVD process for forming semiconducting film having hydrogenated germanium matrix
   
Document Number
US Patent 4745041
Issued Date
May 17, 1988
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Abstract
An image-forming member for electrophotography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.
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Number of Claims:
17
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Owner
Published
May 17, 1988
Application Number
06/932,160
Filed
November 18, 1986
US Classification
430/128   430/133 430/86
Int'l Classification
G03G   5/082   (20060101)  
Examiner
Parent Case
This is a continuation division of application Ser. No. 914,523, filed Oct. 3, 1986, which, in turn, is a continuation of Ser. No. 561,161 filed Dec. 14, 1983, now abandoned, which, in turn is a continuation of Application Ser. No. 418,293, filed Sept. 15, 1982 now U.S. Pat. No. 4,565,731 issued Jan. 21, 1986, which, in turn is a continuation of parent application Ser. No. 36,226 filed May 4, 1979 now U.S. Pat. No. 4,471,042, issued Sept. 11, 1984.
Priority Data
May 04, 1978 [JP] 53-53605 May 04, 1978 [JP] 53-53606
USPTO Field of Search
430/86   430/39   430/128   430/133  
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