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Method for parallel fabrication of nanometer scale multi-device structures    
United States Patent4802951   
Link to this pagehttp://www.wikipatents.com/4802951.html
Inventor(s)Clark; Noel A. (Boulder, CO); Douglas; Kenneth (Boulder, CO); Rothschild; Kenneth J. (Newton, MA)
AbstractArticles exhibiting fabricated structures with nanometer size scale features (nanostructures), typically a device comprising nanostructures of a functional material on or in a substrate of dissimilar material, are produced by a method employing a substrate base or coating and a thin layer serving as a lithographic mask or template, consisting of a self-assembled ordered material array, typically a periodic array of molecules such as undenatured proteins, exhibiting holes, thickness or density variations. It is possible to produce complex structures containing large numbers of nanometers scale elements through a small number of simple steps.
   














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Drawing from US Patent 4802951
Method for parallel fabrication of nanometer scale multi-device

     structures - US Patent 4802951 Drawing
Method for parallel fabrication of nanometer scale multi-device structures
Inventor     Clark; Noel A. (Boulder, CO); Douglas; Kenneth (Boulder, CO); Rothschild; Kenneth J. (Newton, MA)
Owner/Assignee     Trustees of Boston University (Boston, MA); University of Colorado Foundation, Inc. (Boulder, CO)
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Publication Date     February 7, 1989
Application Number     07/136,992
PAIR File History     Application Data   Transaction History
Image File Wrapper   Patent Term   Fees
Litigation
Filing Date     December 23, 1987
US Classification     216/56 216/39 427/282 427/307 427/533 427/535 427/551
Int'l Classification     B44C 001/22 B05D 003/06 G03C 015/00 G03C 005/00
Examiner     Powell; William A.
Assistant Examiner    
Attorney/Law Firm     Cushman, Darby & Cushman
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Parent Case     This is a division of application Ser. No. 837,376, filed Mar. 7, 1986, now U.S. Pat. No. 4,728,591.
Priority Data    
USPTO Field of Search     156/630 156/633 156/643 156/644 156/655 156/656 156/657 156/659 156/662 156/902 156/272.2 156/273.9 156/274.4 428/333 428/474.4 430/5 430/313 430/314 430/315 430/316 430/317 430/318 430/323 430/324 427/43.1 427/96 427/98 427/272 427/282 427/307
Patent Tags     parallel fabrication nanometer scale multi-device structures
   
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What is claimed is:

1. A method of forming a pattern on a nanometer scale comprising the steps of:

binding to a substrate surface a self-assembled two-dimensionally ordered material array forming a two-dimensional spatial pattern of at least one of thickness, density and chemical reactivity variations, said pattern having a characteristic dimension of 1-50 nanometers,

forming at least one overlayer on said array; and

forming a two-dimension, nanometer scale pattern of holes in said overlayer which is determined by said pattern in said array.

2. A method of forming a pattern on a nanometer scale comprising the steps of:

binding to a substrate surface a self-assembled two-dimensionally ordered array of nondenatured protein molecules said two dimensional array forming a two-dimensional spatial pattern of at least one of thickness, density and chemical reactivity variations, said pattern having a characteristic dimension of 1-50 nanometers; and

transferring a two-dimensional nanometer scale pattern formed from said at least one of thickness, density and chemical activity variations onto said substrate.

3. A method of forming a pattern on a nanometer scale comprising the steps of:

binding to a substrate surface a self-assembled two-dimensionally ordered array of nondenatured protein molecules said two dimensional array forming a two-dimensional spatial pattern of holes, said holes having a dimension of 1-50 nanometers; and

applying material to an assembly of said array and said substrate to form projections in said holes bound to said substrate.

4. A method of forming a pattern on a nanometer scale comprising the steps of:

binding to a substrate surface a self-assembled two-dimensionally ordered material array forming a two-dimensional spatial pattern of at least one of thickness, density,and chemical reactivity variations, said pattern having a characteristic dimension of 1-50 nanometers; and

removing material from portions of said substrate corresponding, to said spatial pattern to form pits.

5. A method of forming a pattern on a nanometer scale comprising the steps of:

binding to a substrate surface a self-assembled two-dimensionally ordered material array forming a two-dimensional spatial pattern of at least one of thickness, density and chemical reactivity variations, said pattern having a characteristic dimension of 1-50 nanometers;

forming at least one overlayer on said array;

forming a two-dimensional nanometer scale pattern ins aid overlayer, which is determined by in said array; and

connecting at least one of said array and said overlayer to at least one conductive electrode.

6. A method as in claim 4 further comprising the step of filling said pits with material different from said substrate

7. A method as in claim 6 wherein said substrate is multi-layered and said pits extend down into at least two layers and said method further comprises the steps of:

applying material on the surface of said substrate in accordance with a two-,dimensional spatial pattern having a characteristic dimension of 1-50 nanometers.

8. A method as in claim 6 wherein said substrate is multi-layered and said holes extend comprising the steps of

replacing said array with another self assembled two-dimensionally ordered array forming another two-dimensional spatial pattern of holes different from said pattern of said array, said another pattern having a characteristic dimension of 1-50 nanometers; and

filling said holes in said another pattern with material extending above said substrate

9. A method as in claim 1 further comprising the step of applying conductive electrodes to at least one of said overlayer and said array.

10. A methgd as in claim 1 further comprising the step of applying material different from said array and said overlayer through said holes in said overlayer.

11. A method as in claim 1 or 2 further comprising the final step of removing said array.

12. A method as in claim 1 further comprising the step of removing said overlayer.

13. A method as in claims 1, 2, 3 or 4 wherein said binding of said array includes the step of electrically binding said array spatially differentiated part of said substrate surface.

14. A method as in claim 13 wherein said electrically binding step includes the steps of:

applying a conducting layer to said spatially differentiated part of said substrate; and

charging said conducting layer, said array being bound. in areas defined by said charging.

15. A method as in claims 1, 2, 3 or 4 wherein said array binding step includes the step of charging the substrate surface by exposing the substrate surface to charged partcles, plasma, atoms or molecules.

16. A method as in claims 1, 2, 3 or 4 wherein said array binding step includes the step of adding adhesive to said substrate surface to bind said array to said substrate.

17. A method as in claims 1 3 or 4 wherein said array binding step includes the step of crystallizing said array in situ on said substrate surface.
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BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to the formation of structures on a nanometer size scale.

2. Description of the Prior Art

In recent years interest has increased in the fabrication of electronic, optical and/or biomolecular devices of nanometer size (nanometer structures). An attractive feature, of such molecular size devices is the vast number that may be packed into a small area, i.e., the high density that is possible. Computers which incorporate such devices would have significantly increased memory and speed. The incorporation of biological molecules into such devices is also desirable and would be facilitated by the ability to fabricate structures on a nanometer scale. The fabrication of devices on the nanometer level also is desirable since new physical effects not obtainable for larger size devices beome important. An example is the patterning of surfaces for utilization of surface enhanced Raman scattering phenomena.

Current methods of producing such nanometer devices include writing on the surface of a substrate or on a substrate covered with an electron sensitive resist material with a focused electron beam. This serial method of device fabrication is, however, limited by the long times required to produce the vast number of nanometer devices possible in small areas (i.e., over 10,000 devices in a micron square area) Additionally, conventional methods do not presently offer convenient means of incorporating active biological molecules into nanometer size devices.

A particularly advantageous method of producing microdevices and micropatterns consists of lithographic reproduction of an existing pattern from a suitable mask onto the device substrate. Such a preexisting pattern is transferred by placing the mask in proximity to the underlying substrate. Then the pattern is etched into or applied to the substrate using a variety of methods including exposure to a beam consisting of reactive ions, electromagnetic radiation or reactive molecules The mask is normally produced by ,a serial writing method such as focusing an electron beam on a suitably sensitive material such as a resist material Current lithographic methods are limited by the size of the individual features which can be embedded in a mask, the size of the mask as well as the time necessary to produce these masks In particular, currently employed lithographic masks will typically have features which are micron in dimension whereas nanometer microdevice fabrication requires masks containing nanometer scale details. While serial writing of such a pattern on a nanometer scale is possible, using known methods such as focused electron beams, the necessary time for production of such a pattern is a serious limitation for the practical fabrication of nanometer devices See, for example, U.S. Pat. Nos. 4,103,064 and 4,103,073, Craighead et al, "Ultra-Small Metal Particle Arrays Produced by High Resolution Electron-Beam Lithography", J. Appl. Phys. 53 (11) (Nov. 1982), pp. 7186-7188, Mochel et al "Electron Beam Writing on a 20-A Scale in Metal 8-Aluminas", Appl. Phys. Lett. 42 (4) (Feb. 1983), pp. 392-394, Isaacson "Electrons, Ions and Photons in Submicron Research", Submicron Research, Cornell University (1984), pp. 28-32.

Attempts have also been made to formulate techniques to fabricate nanometer scale devices "in parallel" wherein a number of devices are made at the same time in a relatively few number of steps. For example, it has been suggested that large biological molecules may be used as a mask to apply a nanometer scale pattern of material on a substrate. Suggestions for the particular large molecule to be employed have included DNA and denatured proteins., See Carter, "Molecular Level Fabrication Techniques and Molecular Electron Devices", J. Vac. Sci. Technol. Bl (4) (Oct.-Dec. 1983), pp. 959-968, Carter, "Biotechnical Synergism in Molecular Electronics", Nonlinear Electrodynamics in Biological Systems, Plenum Press, pp. 260-273 and Tucker, "Biochips: Can Molecules Compute?", High Technology, Vol. 4, No. 2 (Feb. 1984), pp. 36-47 and 79, see particularly p. 46.

SUMMARY OF THE INVENTION

The present invention advances techniques for creating nanostructures beyond those techniques known to date as described above. In accordance with the present invention, arrays consisting of numerous identical nanometer scale structures are created in a few steps. Such nanostructures are based on nanometer patterns created by self-assembled two-dimensional molecular arrays.

In the present invention, a substrate surface, which can either serve as a passive support such as a carbon film or have intrinsic solid state properties used in the device, such as silicon, supports a self-assembled two-dimensional molecular array exhibiting density, thikness and/or chemical reactivity variations. The array may typically consist of two-dimensionally crystallized nondenatured proteins which retain their native properties of a very regular nature. Alternatively, the array may consist of other non-biological material.

The two-dimensional self-assembled molecular array may be used to transfer a pattern contained in the molecula,r array onto either an underlying substrate or an overlying coating. In a simple embodiment of the present invention, a self-assembled molecular array includes a two-dimensionally ordered array of holes formed by nondenatured protein molecules bound to a substrate base. A functional material to be used in the nanostructure is deposited onto the substrate surface through the holes. The molecular array is then removed to leave a substrate surface covered by a periodic array of islands composed of the material. A particular advantage of employing nondenatured protein molecules is their extremely regular nature.

In another embodiment, the two-dimensional self-assembled molecular array which is bound to a base support substrate is overcoated with a thin film of material to be used in the nanostructure. The film may be of metal, insulator or semiconductor. The film is then irradiated with an ion beam, for example, to replicate the pattern of holes in the underlying molecular array. In fact, the present invention may be employed to create improved masks and templates to be used in lithographic production of nanometer structures.

Alternatively, holes through the selfassembled molecular array may be employed as a pattern for etching the substrate.

Composite devices, biomolecular-solid state heterostructures consisting of biologically active molecules and other functionable materials may be produced according to the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other objects and advantages of this invention will become more apparent and more readily appreciated from the following detailed description of the presently preferred exemplary embodiments of the invention taken in conjunction with the accompanying drawings, of which:

FIG. 1 is a schematic diagram of a nanostructure including a self-assembled two-dimensional molecular array used as a template for an overlayer;

FIG. 2 is a schematic diagram of a nanostructure consisting of a self-assembled two-dimensional molecular array used as a mask for the deposition of additional material on a substrate;

FIG. 3 is a schematic diagram of a nanostructure consisting of a self-assembled two-dimensional molecular array used as a mask for removing material from a substrate;

FIG. 4 is a schematic diagram of the electron density of the self-assembled two-dimensional molecular array from Sulfolobus acidocaldarius superimposed with the results of metal deposition;

FIG. 5 is a schematic diagram of one possible finished nanostructure according to the present invention;

FIGS. 6A-6H schematically illustrate the process for forming the structure of FIG. 5;

FIG. 6I represents a nanostructure according to another embodiment of the present invention;

FIGS. 7A-7D schematically illustrate the method of forming a nanostructure in accordance with yet another embodiment of the present invention; ,

FIGS. 8A-8D schematically illustrate the steps of forming a structure according to the present invention with a multilayered substrate having material deposited therein and having an overlying pattern of material commensurate with the deposits in the substrate; and

FIG. 8E is a schematic illustration of a nanostructure according to the present invention with a multilayered substrate having deposits therein and an overlying pattern of material incommensurate with the deposits in the substrate.

DETAILED DESCRIPTION Of THE PRESENTLY PREFERRED EXEMPLARY EMBODIMENTS

A fundamental structural unit that forms the basis of all embodiments of this application and is illustrated in FIGS. 1-5 includes a substrate 10 supporting a self-assembled two-dimensionally ordered molecular array containing thickness, density or chemical reactivity variations in a spatial pattern having a characteristic dimension of 1-50 nanometers. Of course, a pattern of variations in thickness may very well be a pattern of holes extending through array 12.

Substrate 10 may be made of a passive supporting material such as a molecularly smooth amorphous carbon, crystalline mica or graphite or a functional material to be used in the ultimate nanodevice such as silicon. The substrate base may also consist of a multilayer composite such as layers 10a illustrated in FIGS. 8A-8E. Multilayered substrate 10a may include silicon coated by a thin insulating layer of silicon dioxide or other material, for example.

In some cases, the substrate base may be a well defined area which is part of a larger base support. For example, the base may contain a micropattern consisting of a thin layer of conductive material such as aluminum which is deposited by conventional lithographic methods. In this case, array 12 could be bound selectively to specific areas on base 10 delineated by the micropattern. This can be accomplished by using a variety of conventional methods which serve to activate the specific areas delineated by the micropattern so that they bind array 12. For example, array 12 could be made of a material that normally carries an electrical charge and which is attracted to the patterned conducting layer through application of a voltage differential between this layer and a second electrode placed above substrate 10. Alternatively, a pattern which is lithographically transferred to a substrate base using conventional methods can be selectively activated by using glow discharge. In this case, surrounding areas which do not contain the micropattern would be prevented from developing an attractive charge because they would be coated with an insulating layer.

Self-assembled array 12 can be conventionally produced using a variety.of protein molecules including hemocyanin,,cytochrome oxidase, porin from the E. coli outer membrane, acetylcholine from nicotinic end-plate receptors, rhodopsin from photoreceptor membranes and in some cases are found to occur, in nature such as in the S-layer from Sulfolobus acidocaldarius or the purple membrane from Halobacterium halobium. Approximately 1000 distinct two-dimensional crystallizable proteins are known. A general method for production of such a self-assembled protein array is described by Keegstra and van Bruggen, "Electron Microscopy at Molecular Dimensions" Springer-Verlag, New York (1980), pp. 318-327.

A second example of array 12 involving the membrane protein rhodopsin is given by B.L. Scott et al, "Two-Dimensional Crystals in Detergent-Extracted Disk Membranes From Frog Rod Outer Segments (ROS)" Bio. Phys. J. Vol. 33, (1981) p. 293a. Self-assembled membrane arrays 12 are typically 5-20 nanometers in thickness and normally have an overall diameter between 0.1 and 1 micron. It is possible, however, to form larger membranes using established procedures such as membrane fusion which consists of adding a detergent such as cetyltriammonium bromide (CTAB) to a suspension of membranes and then incubating at room temperature for several days.

Examples of array 12 which contain an ordered pattern of through holes include the two-dimensional array formed by hemocyanin, a respiratory protein from the spiny lobster Panulirus interruptus, according to the method of Keegstra and van Bruggen, supra, and the S-layer which is naturally found in the facultatively sulphur oxidizing microorganism, Sulfolobus acidocaldarius and isolated according to the method of Michel et al, Electron Microscopy at Molecular Dimension, Ed. by W. Baumesiter and W. Vogell, Springer-Verlag (1980), p. 27. Numerous other examples of array 12 which form naturally or can be formed using known methods include those formed from the proteins cytochrome oxidase, porin and connexon.

Bacteriorhodopsin in the purple membrane of Halobacterium halobium and rhodopsin isolated from frog or bovine retinas form arrays 12 which have a pattern of two-dimensional density and thickness variations. The two-dimensional crystals formed from ribosomes, well known in the literature, form a biomolecular assembly containing both protein and nucleic acid which may be used as array 12.

Array 12 may also have chemical reactivity variations spatially distributed thereover Examples of materials which may be used for array 12 exhibiting chemical reactivity variations include protein molecules which exhibit catalytic activity or act as a coenzyme for catalytic activity. Array 12 of purple membrane formed from bacteriorhodopsin molecules exhibit such a spatially varying chemical reactivity since it acts as a light-driven proton pump. Hence, a local pH gradient will be created at the site of each bacteriorhodopsin molecule during illumination of the entire array with light of 570 nm wavelength. This local pH gradient could be used to activate pH sensitive reactions in the molecules of an overlayer thereby producing a structural pattern within the overlayer on a nanometer scale dimension. A large number of reactions are known which are pH sensitive including reactions involving molecules contained in many commercially available pH sensing papers.

Array 12 can also consist of the surface layer of a three-dimensional crystal. For example, most three-dimensional crystals formed from protein molecules consist of large void spaces filled with water which comprises up to 80% of the total volume of the crystal. The top surface layer exhibits a large variation in contour which is ideal for acting as a template in the same manner as a monolayer two-dimensional crystal as described herein. Examples include crystals formed from the protein molecules lysozyme and hemoglobin.

Additionally, many examples of two- and three-dimensional array 12 of non-biological origin exist which are useful in the present invention. For example, zeolites from a class of crystalline materials characterized by periodic arrays of nanometer dimension holes may be employed in the present invention, as illustrated by Wright et al, "Localizing Active Sites in Zeolitic Catalysts", Nature, Vol. 318, p. 611 (1985). These non-biological arrays could be used as single crystal surfaces or in the form of thin films, grown epitaxially as unit cell monolayers on a crystalline substrate. Microscopic colloidal particles of uniform size are another non-biological example useful as array 12. Such an array is formed by slowly altering the chemical properties of a colloidal particle suspension in contact with substrate 10 to be coated in such a way as to cause particles to come out of suspension and deposit on the surface of substrate 10. In an aqueous suspension of polymer spheres, for example, the salt concentration can be increased. When this, process is done slowly, ordered arrays of particles of diameters from 5 nm to about 1000 nm can be deposited on the surface.

Various techniques may be employed to bind array 12 to substrate 10 or array 12 may be formed on substrate 10 in situ. Binding can be accomplished electrostatically which is typically achieved by treating substrate 10 chemically or by placing substrate 10 in a glow discharge chamber. Array 12 is then applied as an aqueous suspension of membrane fragments on substrate 10 which is subsequently dried by evaporation, blotting with an adsorbant medium or by mechanical shaking. Alternatively, array 12 can be bound using a binding layer between substrate 10 and array 12 which can consist of an application of polylysine or another molecule which binds preferentially to substrate 10 and array 12.

To chemically bind array 12 to substrate 10, substrate 10 may be chemically treated or coated in such a way as to promote the binding of array 12. For example, a substrate of carbon may be coated with an adsorbed molecular layer of the cationic polyamino acid poly-l-lysine in order to bind array 12 with an anionic surface. Alternatively, for example, the anionic polyamino acid poly-l-glutamate will bind cationic array 12 to substrate 10. For example, substrate 10 may be placed in a vacuum and exposed to a mild plasma etch (glow discharge) prior to the application of the polyamino acid. A 10% solution of the polyamino acid is applied to substrate 10 and left to incubate for several minutes. Substrate 10 is then washed with distilled water and air dried. Array 12 is then applied to the coated substrate 10.

Array 12 may be bound to substrate 10 by electrical means when substrate 10 is selected to be electrically conducting. Conducting substrate 10 may be placed in contact with an aqueous suspension of two-dimensional ordered membrane sheets which carry a surface charge. Applying an electric field between substrate 10 and a second electrode in contact with: the suspension can both orient the sheets with one side preferentially facing substrate 10 and move the membrane sheets onto substrate 10. For example, purple membrane has been shown to exhibit ordering in suspension in applied electric fields. See, Keszthelyi, "Orientation of Purple Membrane by Electric Fields" Methods in Enzymology, Vol. 88, L. Packer (Editor), pp. 287-297.

Related orientational effects can be achieved by magnetic fields.

Electro-chemical means may be employed to bind array 12 to substrate 10. As an example, substrate 10 may have a patterned Ta/W film on one surface with an ordered array of holes in the Ta/W film exposing a carbon base. An oxide film is rapidly produced on the Ta/W film by applying 0.1 N NaOH to substrate 10 while applying a voltage between the metal film and the NaOH. This is accomplished by connecting the grid on which substrate 10 sits to the positive terminal of a battery and connecting the negative terminal to the NaOH solution via a small electrode. A resistor in series with the grid controls the current draw. In this fashion, an oxide layer is produced on the metal, while no oxide is formed on the exposed carbon holes. After deposition of the oxide layer, the grid is washed, dried and then glow discharged in order to make the carbon hydrophilic, for the subsequent adsorption of a different molecule, such as the protein ferritin. The ferritin is preferentially adsorbed on the exposed carbon holes and not on the metal oxide layer surrounding them.

It is also possible to crystallize array 12 directly on the surface of substrate 10 using the properties of the substrate to promote crystallization. This is accomplished using methods of two-dimensional protein crystallization well-known in the literature. An example given by Keegstra and van Bruggen, supra, involves the assembly of two-dimensional arrays of Panulirus interruptus hemocyanin. A small drop of hemocyanin protein in a 10 millimolar (mM) sodium acetate buffer is placed on an electron microscope grid having a parlodion-carbon supporting substrate: The grid, with the protein solution on top, is floated on a 50 mM sodium acetate solution for a time from 30 minutes to several hours at 4.degree. C. with the specimen supporting substrate 10 acting as a membrane for dialysis. Then, the grid is washed and dried.

From the basic structure of array 12 on base 10, a number of alternative embodiments can be created. For example, as illustrated in FIG. 1, overlayer 14 may be applied on top of array 12. Overlayer 14 may consist of a thin layer typically 1-2.5 nanometers thick of a material selected for its ultimate function in subsequent steps in the nanometer structure fabrication. For example, when pattern 16 in array 12 includes holes, pattern 16 may be transferred into overlayer 14 by ion milling to form holes 18. As will be explained below, overlayer 14 may then be removed and used as a nanometer mask for further steps in the nanodevice fabrication. In this case, the material for overlayer 14 may be chosen for its flexibility and structural integrity. Alternatively, overlayer 14 may comprise a functional material in the ultimate nanodevice and be chosen for its optical/electronic properties.

A specific example of the embodiment illustrated in FIG. 1 will now be provided. In this embodiment, array 12 is the crystalline proteinaceous cell wall surface layer (S-layer) from the thermophilic bacterium Sulfolobus acidocaldarius a sulfur-oxidizing microorganism whose natural habitat is hot acidic springs. The S-layer consists of 10 nm thick monolayer periodic array of a single glycoprotein having a molecular weight in the range of 140-170 kdaltons. Specimens of purified S-layer show an array of protein dimers arranged as shown in FIG. 4, a basis of three dimers on a two-dimensional triangular lattice having a 22 nm lattice parameter. The three-dimensional structure is porous, the protein occupying 30% of the volume within the 10 nm thick sheet containing the S-layer.

Substrate 10 in this embodiment of the nanostructure device consists of a 30 nm thick amorphous carbon film which provides a molecularly smooth surface. The carbon film is deposited on an electron microscope grid 3 millimeters in diameter using conventional methods. The S-layers are employed in the form of aqueous suspensions (12 mg/ml) of primarily monolayer crystalline fragments of varying size up to 0.5 micron diameter. Adsorption of the S-layer to the carbon substrate is accomplished by exposing the substrate to a mild plasma etch (glow discharge) in order to remove organic contaminants and render carbon substrate base 10 hydrophilic. A drop of S-layer suspension is then placed in contact with substrate 10 and rinsed with double distilled water. Excess water is drawn off with filter paper and the preparation air dried.

Overlayer 14 is then deposited by evaporation. In this embodiment, overlayer 14 is a thin layer Ta/W which is chosen because of its fine grain. Application of overlayer 14 is accomplished by e-beam evaporation of 80% tantalum and 20% tungsten (by weight) at 2.times.10.sup.-6 torr at room temperature at an incident angle of 40 degrees from the normal to substrate 10. This produced an average overlayer thickness of 1.2 nm as determined by a quartz crystal monitor and grain sizes of 2-3 nm as determined by electron microscopy.

To pattern overlayer 14 to assume pattern 16 of thickness or density variations in array 12, overlayer 14 is exposed to an argon ion mill for a short period of time in order to punch holes corresponding to variations 16 in array 12.

Substrate 10 in this example may consist of a large variety of materials. For example, for the purpose of electrical contact, substrate 10 may be fabricated from a conductor such as aluminum. Alternatively, substrate 10 may consist of a layered structure such as a conductor coated by a thin insulator such as aluminum and aluminum oxide or a semiconductor material such as a P-doped silicon. To provide a guide for binding array 12, or as a suitable surface for crystallization, substrate 10 may consist of a patterned surface produced by conventional scanning beam methods or by other methods described herein.

Alternatively, a liquid surface may be utilized since it is well known that many arrays such as purple membrane can be layered on the surface of a liquid such as water. All of the formation techniques described herein may be carried out with an array supported by such a liquid surface. One advantage of such a substrate 10 is the ease by which the patterned nanostructure is removed from liquid substrate 10.

Thus, some proteins, in particular biomembrane based systems, are easier to grow as large single crystals with the proteins and a lipid matrix at an air-water interface. Once formed, a two-dimensional protein crystal at an air-liquid interface could be used as a template for nanopatterning an evaporated metal overlayer 14 as has been described above. Patterned metal layer 14 could then be transferred to a solid substrate by the usual techniques employed to deposit surfactant (Langmuir-Blodgett) films. Alternatively, overlayer 14 once patterned, could be removed from two-dimensional array 12 by immersing substrate 10 in a fluid and floating it on the air-fluid interface as is routinely done for carbon-platinum freeze-fracture replicas.

Overlayer 14 may be part of a larger pattern formed using conventional methods of integrated circuit ,fabrication. In this case, a suitable mask formed from a resist is used to allow deposition to occur only in the desired areas including the area overlying array 12.

Overlayer 14 may also consist of a thin layer of material which has been patterned using the methods described herein. For example, a thin layer metal which has been patterned into a metal screen containing nanometer sized holes can be produced as described herein. This layer can be selectively bound directly over a two-dimensional self-assembled array 12 to serve as overlayer 14.

Alternatively, a nonpatterned overlayer 14 may be deposited on an array, and then coated with a second array 12. The second array is used to pattern the layer using masking techniques to be described and then removed. In a second fabrication step, the underlying array serves as a template for further patterning as described above. The two arrays could be commensurate, producing a periodic structure, or incommensurate, producing a modulated structure, as will be described below with respect to FIGS. 8A-8E.

A variety of overlayers 14 may be patterned using arrays 12 as templates, for example thin metal films as has been described above. As other examples, overlayer 14 itself may be a layered structure produced by multistage evaporation or by chemical treatment, e.g., oxidation, of an initially homogeneous film. A first layer of Ta/W may be followed by Pt, for example.

Instead of using array 12 as a template for producing a patterned overlayer 14, array 12 may be used as a mask for applying material on or in substrate 10 or.removing material from substrate 10. In FIG. 2, array 12 is employed as a mask for forming deposits 20 on substrate 10. In FIG. 3, mask 12 is employed to control the removal of material from substrate 10 forming pits 22. In the embodiment of FIG. 2, array 12 advantageously has a pattern of through holes allowing penetration of atoms or molecules through array 12 to substrate 10. In the embodiment of FIG. 3, density or thickness variations in array 12 can be transferred directly into substrate 10 utilizing penetrating X-ray or electron beams which then react with substrate resist material. To form pits 22, an agent may be applied to the assembly which reacts directly with substrate 10 or is activated by the additional exposure of a penetrating beam such as visible light. Alternatively, the removal or alteration of the composition of base material 22 might occur through electrical conduction of ions through the channels formed in array 12.

The embodiment illustrated in FIG. 5 is a more detailed version of that illustrated in FIG. 1 in that it consists of array 12 on substrate 10 with overlayer 14 having holes 18 therein. In this embodiment, holes 18 have a diameter of approximately 15 nm arranged on a triangular lattice with 20 nm periodicity. Holes 18 are formed in overlayer 14 which is best characterized as a lattice or screen consisting of two intersecting periodic sets of metal strips. Film 14, which is approximately 1 square micron in area, is part of larger micropattern which has been fabricated using conventional methods. Conducting electrod,e material 24 is disposed adjacent to array 12 and overlayer 14 to complete the assembly.

The method of forming the embodiment of FIG. 5 is illustrated in FIGS. 6A-6H. First, as illustrated in FIG. 6A, the 1 square micron area of exposed carbon layer 10 to which the S-layer array 12 is bound is fabricated by depositing a photoresist material 26 onto a larger carbonffilm and then exposing and developing this resist using conventional prior art microdevice fabrication methods in the area where the nanostructure is to be formed. A hydrophobic resist material is chosen to minimize binding of the S-layer to the surface of resist 26. Then, array 12, consisting of the S-layer is disposed in the space on substrate 10 layed open after removal of the exposed photoresist. Then, as illustrated in FIG. 6B, a one nanometer thick layer of Ta/W is deposited as described above with respect to FIG. 1. That is, overlayer 14 is deposited using evaporative beam techniques applied at a 40.degree. angle to the normal. It should be noted that the undeveloped layers of photoresist 26, i.e., those areas where the carbon layer of substrate 10 is not exposed, will also be coated with the Ta/W.

In FIG. 6C, holes 18 are formed in overlayer 14 using argon ion mlling at normal incidence. In this example, a 2 KV beam of 0.2 ma/cm.sup.2 is employed for 25 seconds This has the effect of transferring spatially ordered pattern 16 in array 12 to overlayer 14., Note that the size of the screen formed depends on the time of exposure to the argon ion milling For example, thinner sized screen strips and larger holes can be produced by increasing the exposure time to ion milling from 25 to 30 seconds. Conditions, of course, will vary depending upon the thickness of metal film 14 and exact specifications of the ion mill.

In addition to ion milling, holes 18 can be formed by X-ray irradiation, electromagnetic irradiation, electron beam irradiation, particle beam irradiation, etching, chemical removal, solvent removal, plasma treatment or any combination of these various techniques.

In FIG. 6D, the areas of substrate 10 which had been covered by photoresist 26 and film 14 are removed by exposing and developing the photoresist using conventional methods.

In FIGS. 6E-6H, conductors 24 of micron dimension are fabricated on substrate 10 leading to and from the nanostructure device using conventional methods In FIG. 6E, photoresist layer 28 is placed over the entire area of substrate 10 including areas covered by the 1 nanometer thick Ta/W film 14 which contains the nanometer screen pattern. A wire pattern is exposed on photoresist 28 and upon developing, the photoresist is removed from areas where the wire pattern occurs in FIG. 6F. In FIG. 6G, conducting metal layer 30, such as aluminum, is deposited. In those areas where the wire pattern has been developed, metal 30 will directly coat carbon base 10. In step 6H, photoresist 28 and overlying metal 30 are removed, leaving only conducting metal layer 24 to form,the wires.

Although the nanostructure described was produced on a carbon layer, it is to be understood that a similar method can be used to produce nanometer patterned devices on other useful solid state surfaces such as silicon. In addition, while the fabrication of only a single nanometer patterned microdevice was described, a similar multistep method could be used to fabricate in parallel many such nanodevices which are arranged in a complex pattern comprising an electronic or optical integrated circuit.

Although conventional electrodes have been utilized in the example of FIGS. 6A-6H which directly connect to the nanostructure array, alternative methods of interacting directly with such a patterned array are also possible. For example, each individual nanostructure can be addressed using a scanning tunnelling microscope probe. In the case of optically sensitive material, entire arrays can be addressed with a focused laser beam.

The device as illustrated in FIGS. 1 and 5 can be considered a microsubstrate comprising a base substrate, a lithographic mask or template material containing an ordered nanometer scale pattern and overlying material to which the patterned nanometer scale detail has been transferred. The method described in FIGS. 6A-6H demonstrates that such a microsubstrate can be used to produce a microdevice based on the nanometer patterned array. In contrast to conventional methods for production of micropatterns, the methods thus far described and the articles produced therefrom.allow significantly smaller patterns to be produced. For example, conventional photo-lithographic methods for production of integrated circuits result in microdevices typically one micron square area. The embodiment described in FIGS. 6A-6H results in the patterning of several thousand nanostructures in a one micron square area.

In addition, as described with respect to FIG. 6A-6H, conventional lithography can be used in conjunction with the microsubstrate to produce a nanometer pattern within the normally unpatterned area used to produce conventional micro devices. The present invention also offers significant advantages over more conventional methods of writing nanometer size patterns on a substrate surface with an electron beam. The present invention allows for parallel production of large numbers of nanometer structures thus offering a significant decrease in the time it would take to produce the same microdevices with the serial write method, for example with a scanning electron beam.

FIGS. 7A-7D illustrate a manner in which the structure of FIG. 2 and other useful structures can be formed. As illustrated in FIG. 7A, array 12 is formed on substrate 10. Then, as illustrated in FIG. 7B, a three nanometer thick layer 33 on array 12 and pro3ections 32 in holes 16 through array 12 is formed using an evaporative beam at normal incidence. This structure may be created in the same manner as illustrated in FIGS. 6A-6B except that the metal is applied at normal incidence. Layer 33 and projections 32 may be a metal, such as Ta/W or any other material.

In FIG. 7C, array 12 is lifted off with layer 33 to leave projections 32 deposited on substrate 10. Projections 32 obviously have the same pattern as holes, 16 in array 12. Array 12 can be lifted off using a number of techniques which break up the organic biomolecular array and do not effect projections 32. For example, array 12 may be exposed to a detergent solution such as 5% SDS (sodium dodecylsulfate), proteolyt enzymes which specifically degrade protein, or acid such as HCl, or a c