Stabilization of energy sensitive semiconductive devices by forming initial electrodes which are exposed through an overlying layer of semiconductor, dipping the exposed first electrode and the semiconductor layer in colloidal solutions, or well stirred suspensions of specified metal hydroxides, such as those of nickel, chromium, cobalt or related metals, followed by rinsing the non-sensitive side of the device in de-ionized water. After air drying, the deposition of an overlying second electrode is carried out by a metallization technique. The device is then heated in air, at 150.degree. C. for four hours.
A method of manufacturing an integrated thin film solar battery module including a substrate, and a plurality of unit cells connected in series on the substrate, each of the unit cells having a first electrode layer, a semiconductor layer and a second electrode layer which are stacked one upon the other on the substrate. The method includes the steps of scribing the first electrode layer formed on the substrate, forming a semiconductor layer on the first electrode layer, scribing the semiconductor layer for each of the plurality of unit cells to form openings for connection to the first electrode layer, forming a second electrode layer on the semiconductor layer, scribing the second electrode layer and the semiconductor layer in the vicinity of the openings formed in the semiconductor layer, allowing an edge surface of the semiconductor layer to be exposed to the outside by removing residues of the second electrode layer and the semiconductor layer, and applying a heat treatment at 130.degree. C. or higher after division of the second electrode layer and the semiconductor layer.
The present invention discloses a method of improving an electroluminescent efficiency of a MOS device by etching a semiconductor substrate thereof. A chemical etching process is performed to remove surface states or surface defects located on the surface of a silicon substrate before a nanoparticle layer and a conducting layer is formed on the silicon substrate, in order that the non-radiative electron-hole recombination centers located on the surface of silicon substrate is suppressed. Accordingly, the percentage of radiative electron-hole recombination is heightened and the electroluminescent efficiency of a MOS light emitting device is drastically enhanced. Advantageously, the chemical etching step is able to create a nanostructure on the surface of the silicon substrate to increase the probability of the collision of electron-hole pairs and phonons, and the electroluminescent efficiency of a MOS light emitting device is improved as well.
The electro-migration of electrode metal takes place under an elevated temperature condition in amorphous silicon devices having conventional PI-type, NI-type, or PIN-type hydrogenated amorphous silicon layered structures, which substantially degrades the electrical characteristics of the devices. This problem is solved by forming a chemically inactive layer consisting mainly of amorphous silicon oxide on the surface of amorphous silicon layer by an aqueous washing and drying process, to establish electrical contacts through the chemically inactive layer between the hydrogenated amorphous silicon layer and either a collector electrode or a transparent electrode. This structure not only prevents such electromigration of electrode metal, but it also allows a greater freedom for choosing a material for the collector electrode.
