The present invention provides a novel epoxy resin-based curable composition suitable for use as an encapsulating resin composition for semiconductor devices capable of being highly resistant against crack formation with low internal stress by curing and yet having very high heat conductivity and maintaining high glass transition temperature. The inventive composition comprises (a) 100 parts by weight of a curable epoxy resin blend which is a mixture of an epoxy resin and a curing agent therefor, (b) from 5 to 100 parts by weight of a block copolymer composed of at least one segment of an aromatic polymeric moiety, phenyl novolac, and at least one segment of an organopolysiloxane moiety having 30 to 200 silicon atoms and bonded to the aromatic polymeric moiety through a carbon-to-silicon linkage, and optionally (c) an inorganic filler which is preferably a silica filler such as powdered quartz in an amount not exceeding 1000 parts by weight.
This is a continuation of application Ser. No. 781,533, Sept. 30, 1985, now abandoned, which, in turn, is a continuation-in-part of application Ser. No. 606,703, filed May 3, 1984, now abandoned, which, in turn is a continuation-in-part of application Ser. No. 404,890, filed Aug. 3, 1982, now abandoned.
This invention relates to an optical waveguide module having stable temperature characteristics and moist heat characteristics even in a severe environment. This optical waveguide module includes a waveguide component having an optical waveguide on a waveguide substrate made of silicon or silica glass as the first material, and a ferrule made of a plastic material as the second material. An end face of an optical fiber is fixed by adhesion while it is inserted in a through hole of the ferrule, the through hole having a continuous inner wall. This ferrule is fixed with an adhesive having a predetermined strength so that its the end face opposes the end face of the waveguide component. The second material satisfies a relationship: with respect to the first material forming the waveguide substrate, where .DELTA.L is a difference in thermal expansion coefficient between the first material and the second material, E.sub.1 is a modulus of elasticity of the first material, and E.sub.2 is a modulus of elasticity of the second material.
5258426 - Semiconductor device encapsulant - Owned by Kabushiki Kaisha Toshiba (Kawasaki,JP) [*] Notice:The portion of the term of this patent subsequent to November 26, 2008 has been disclaimed.
A semiconductor device encapsulant contains (a) a thermosetting resin for providing a cured product having a glass transition temperature of not less than 190.degree. C., (b) a filler consisting of a fused silica, (c) a modifier consisting of an MBS or ABS, (d) a modifier consisting of a silicone rubber or a silicone gel, and (e) a lubricant containing a metal chelate compound.
In a semiconductor-sealing liquid epoxy resin composition comprising (A) a liquid epoxy resin, (B) a curing agent, and (C) an inorganic filler, the inorganic filler has such a controlled particle size distribution that the composition provides improved interstitial infiltration and has a low modulus of elasticity in the cured state.
Epoxy resin compositions comprising (A) an epoxy resin of formula (1), (B) a curing agent based on a novolak type phenol resin and/or a triphenolalkane resin of formula (2), and (C) an inorganic filler are suitable for encapsulating semiconductor elements because they show good flow behavior upon casting and cure into less stressed products having improved mechanical strength, Tg, and moisture resistance. ##STR1## R.sup.1 is a hydrogen atom or an alkyl group having 1 to 10 carbon atoms, OG is ##STR2## m is 0, 1 or 2, n is 1 or 2, and l is 0, 1, 2 or 3.
A semiconductor device sealed with resin is disclosed. This semiconductor device comprises a semiconductor element, a lead, and a wire electrically connecting said semiconductor element and said lead. The semiconductor element, the wire, and a portion of the lead are sealed with sealing resin. Calcium hydroxide is added into the sealing resin to serve as a corrosion inhibitor. In the semiconductor device sealed with resin, corrosion of the copper wire can thus be suppressed in high temperature environments.
