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| United States Patent | 4902892 |
| Link to this page | http://www.wikipatents.com/4902892.html |
| Inventor(s) | Okayama; Shigeo (Ibaragi, JP);
Tokumoto; Hiroshi (Ibaragi, JP);
Bando; Hiroshi (Ibaragi, JP);
Mizutani; Wataru (Ibaragi, JP);
Shimura; Masayuki (Saitama, JP);
Nakagawa; Haruki (Saitama, JP);
Shigeno; Masatsugu (Tokyo, JP);
Watanabe; Kazutoshi (Tokyo, JP) |
| Abstract | A probe is shifted at a distance where the probe and a material to be
obsed are sufficiently far away from each other relative to the roughness
of the material's surface. This method prevents the probe from colliding
with the material's surface during the shift of the probe thereby enabling
high speed shift of the probe. Further, a micro-drive mechanism for
controlling tunnel currents may be stopped during the shift in order to
minimize the drift which may be caused by heat generated inside the
micro-drive mechanism. Therefore, it is particularly advantageous to apply
this STM measuring method for high-speed and stable measurement of a very
large surface area and a very rough surface. |
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Title Information  |
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Drawing from US Patent 4902892 |
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Method of measurement by scanning tunneling microscope |
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| Publication Date |
February 20, 1990 |
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| Filing Date |
October 13, 1988 |
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| Priority Data |
Oct 15, 1987[JP]62-260612 |
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Title Information  |
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Description  |
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BACKGKROUND OF THE INVENTION
The present invention relates to a method of measurement using tunnel
currents flowing between a probe and a material to be observed. More
particularly, this invention relates to a method of measurement of surface
topographys by a scanning tunneling microscope (hereinafter referred to as
STM) for a large surface area and a very rough surface.
In the measurement of micro-structures of a material surface by the STM, a
detection probe is brought close to the surface of the material, the
separation between the detection probe and the material surface is
controlled to maintain a constant tunnel current which flows by the
application of a voltage between the detection probe and the material, and
the detection probe is shifted across the material surface. This is
utilized for various material observations ranging from the observation of
atoms in a square on the order of several ten .ANG. to the observation of
material structures in a square on the order of several .mu.m.
In such measurements, the separation at which a tunnel current flows is
kept at a constant value, and the material surface is scanned across with
a detection probe. ("Atomic images and electronic states observed by
Tunneling Scanning Microscopes", Japan Physics Association Journal Vol.
42, No. 3 (1987) by Kouji Kajimura: "1st Application of STM" Summary of
34th Applied Physics Association public lecture (1987) by Takafumi Kojio.)
A conventional measuring method by the STM is hereunder described with
reference to FIG. 2. Let us assume that X is a direction of scanning
across the surface of a material 2, Y is a direction parallel with the
surface and perpendicular to the direction X, ad X is a direction
perpendicular to the surface. When a detection probe 1 is brought close to
the material 2 in the direction Z with a voltage being applied
therebetween, a tunnel current starts flowing at a certain separation.
While the separation between the detection probe 1 and the material 2 is
controlled to maintain this tunnel current at constant, the material
surface is scanned across. Based on displacements of the detection probe 1
in the direction Z at measuring points, a three-dimensional image of the
material surface is produced. In this case, the detection probe 1 has to
be moved below a speed to which a Z-axis servo amplifier and a Z-axis PZT
of the STM apparatus can sufficiently and stably respond. Therefore this
method presents the problem that it takes a long time to scan across a
very large surface area and a very rough surface. Furthermore, scanning
operation at high speed increases the risk of collision of the detection
probe with the material surface, and increases drift due to the internal
heat generation, thereby stable measurements are prevented.
Conventional measuring methods by using the STM have the following
problems.
(1) Since the detection probe is moved along the roughness of atoms of a
material surface, the followability of the micro-drive mechanism in the
direction Z determines its scanning speed in the directions X and Y. Since
the resonance frequency of the current micro-drive mechanism is about
several KHz, the scanning speed is limited to about several hundred
Angstrom/sec. Therefore it takes an unrealistically long time to scan
across a large surface which exceeds a several micron meter square.
(2) There are cases in which the detection probe collides with the material
surface if an extremely rough surface is scanned across at a speed as
described in case (1) above. In order to prevent the detection probe from
colliding with the material surface, scanning must be carried out at a
lower speed. Therefore scanning across a large and rough surface area is
far more impractical than that in the case (1) above.
(3) Since the micro-drive mechanism is driven at high speed even at places
other than the measuring points during scanning by the STM, the
micro-drive mechanism generates considerable heat, and consequently this
results in thermal expansion of the micro-drive mechanism, change in the
piezoelectric coefficient, and unstableness in the measurement. Summary of
the Invention
It is an object of the invention to provide an improved method of
measurement by a scanning tunneling microscope for a large surface area
and a very rough surface of a specimen at high speed.
Other and further objects, features and advantages of the invention will
appear more fully from the following description.
In this invention, when the measurement is not carried out, the detection
prove is separated from the material surface sufficiently far in
comparison with the roughness of the material surface, and the operation
of the micro-drive mechanism in the direction toward the material surface
is stopped.
Because of this feature, the probe can be shifted from one measuring point
to another at high seed, and therefore high-speed and stable measurement
by the STM become possible.
(1) Since the separation between the detection probe and the material is
made sufficiently large relative to the roughness of the material surface
at places other than the measuring points, the problem of followability in
the direction Z is eliminated, and measurement of a large surface area at
high speed becomes possible without collision of the detection probe with
the material surface.
(2) Measurement of a very rough surface at high speed is even possible
without the detection probe colliding with the material surface, since the
separation between the detection probe and the material surface is made
sufficiently large in comparison with the roughness of the material
surface.
(3) Operation of the micro-drive mechanism in the direction of the Z-axis
can be stopped at places other than the measuring points, and the
micro-drive mechanism is vertically driven only once at each measuring
point, thereby the drift which may be caused by heat generated in the
micro-drive mechanism is reduced.
BRIEF DESCRIPTION OF DRAWINGS
FIG. 1 is an explanatory view showing the movement of the probe according
to the present invention,
FIG. 2 is an explanatory view showing the movement of the probe according
to the prior art,
FIG. 3 is a schematic view of one embodiment of STM apparatus according to
the present invention, and
FIG. 4 is a flowchart of the measurement operation by the STM apparatus
according to the present invention.
DETAILED DESCRIPTION
The invention relates to a measurement by the STM, and one embodiment is
described below with reference to the accompanying drawings.
FIG. 1 shows an example of the operation of the detection probe according
to the present invention,
FIG. 3 shows an embodiment of the structure of the STM apparatus according
to the present invention, and
FIG. 4 is a flowchart illustrating one example of the measuring method by
the STM according to the present invention.
One example of the measuring method by the STM according to the present
invention is described with reference to FIG. 1. Let us assume, X is a
direction of scanning across the surface of a material 2, Y is a direction
parallel with the measured surface and perpendicular to the direction X,
and Y is a direction perpendicular to the measured surface.
(1) A detection probe 1 is kept sufficiently far from the surface of a
material 2 in comparison with the roughness of the material surface, and
the detection probe 1 is moved at high speed in a scanning direction 3 to
a point A1 above a measuring point.
(2) The probe 1 is then moved closer to and advanced toward the material 2
in the direction Z as far as a position A2 where a constant tunnel current
flows.
(3) The displacement amount of the detection probe 1 in the direction Z at
the measuring point A2 is measured.
(4) The detection probe 1 is then separated from the material Z and moved
in the direction Z up to the point A1 above the measuring point, and is
moved at high speed in the scanning direction 3 to a point B1 over the
next measuring poit while an ample distance from the material in
comparison with the roughness of the material surface is maintained. As
shown in FIG. 1, the scanning movement of the probe 1 is carried out in a
common plane, i.e., an XY plane.
By repeating the steps described above, a three-dimensional STM image of
the surface of the material is produced based on the values taken at these
measuring points.
One example of the structure of the STM apparatus according to the present
invention and its operation are described with reference to FIG. 3.
Above a measuring point, a voltage is applied between a detection probe 1
and a material 2 by a bias power source 11. While a detection probe
release signal 16 is being outputted from a control circuit 15, an I/V
converter 12 outputs a voltage value corresponding to a value of tunnel
current flowing between the detection probe 1 and the material 2 to a
Z-axis servo amplifier and an A/D converter 13. When the output of the
detection probe release signal 16 is stopped, the Z-axis servo amplifier
10 outputs a control signal to a Z-axis micro-drive amplifier 9 in order
to maintain the tunnel current flowing between the detection probe 1 and
the material 2 at a constant value. In response to the inputted control
signal, the Z-axis micro-drive amplifier 9 drives a three-dimensional
micro-drive mechanism 6 in the direction Z thereby shifting the detection
probe 1 so that the value of tunnel current is maintained constant. The
position of the detection probe 1 in the direction Z at this moment is
outputted from the Z-axis servo amplifier 10 to the A/D converter 13, and
an A/D converted value is inputted into the control circuit 15.
Measurement at one measuring point is now completed. After completion of
one measurement, the probe release signal 16 is outputted from the control
circuit 15 to the Z-axis servo amplifier 10, the three-dimensional
micro-drive mechanism 6 is driven in the direction Z so that the detection
probe is moved away and separated from the material by a distance
sufficient relative to the detection probe and is maintained far from the
material in this manner, shift signals in the directions X and Y are
outputted from the control circuit 15 to a 2-channel D/A converter 14, and
then the 2-channel D/A converter 14 outputs D/A converted values to an
X-axis micro-drive amplifier 7 and a Y-axis micro-drive amplifier 8. In
response to the D/A converted shift signals, the X-axis micro-drive
amplifier 7 and the Y-axis micro-drive amplifier 8 drive the
three-dimensional micro-drive mechanism 6, thereby shifting the detection
probe 1 in a scanning direction to a position above the next measuring
point. The abovementioned steps are repeated, and values are measured at
different measuring points. The set of measured values are inputted into
the control circuit 15. The control circuit 15 produces an STM image on a
display apparatus 17 based on these values. One example of the STM
measuring method according to the present invention is described with
reference to FIG. 4. S1, S2, S3, S4, S5 and S2' are operation-wise steps
of the STM measurement.
S1 is a step in which the detection probe of the STM apparatus is moved
away from the surface of a material far enough relative to the roughness
or topography of the material surface.
S2 is a step in which at least one of the detection probe and the material
is shifted to position the detection probe above the next measuring point.
S3 is a step in which a distance between the detection probe and the
material is adjusted so that a constant tunnel current flows between the
detection probe and the material.
S4 is a step in which measurement at a measuring point is carried out while
the tunnel current flowing between the probe and the material is kept at a
constant value.
S5 is a step in which the completion of measurement is determined.
S2' is a step in which at least one of the detection probe and the material
is shifted to position the detection probe above a first measuring point.
The steps are carried out in the following order. First, S1 and S2 are
carried out, and then S3 and S4 are carried out. Unless the completion of
measurement is determined in step S5, steps S1, S2, S3, S4 and S5 are
repeated. When the completion of measurement is determined, the
measurement is completed after step S1 is executed.
The STM measuring method according to the present invention produces the
following effects.
(1) Since the separation between the detection probe and the surface of a
material is made sufficiently large relative to the roughness of the
surface at places other than the measuring points, measurement of a large
surface area at high speed becomes possible without the detection probe
colliding with the material surface.
(2) Measurement of a very rough surface at high speed is even possible
without having the probe collide with the material surface because the
separation between the detection probe and the material surface is made
sufficiently large relative to the roughness of the material surface.
(3) Since operation of the micro-drive mechanism in the direction of the
Z-axis can be stopped at placed other than measuring points, and no more
than one vertical drive of the micro-drive mechanism at each measuring
point is required, the drift which may be caused by heat generated in the
micro-drive mechanism is reduced. The present invention provides an STM
measuring method which effects high-speed and stable measurement of large
and rough surfaces and thus has applicability to many industries.
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Description  |
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