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| United States Patent | 4918030 |
| Link to this page | http://www.wikipatents.com/4918030.html |
| Inventor(s) | Lamb; Walter R. (Sunnyvale, CA);
Lawrence; John E. (Cupertino, CA) |
| Abstract | An improved textured surface of a photovoltaic device is provided by an
anisotropic etching process in which pyramidal structures are formed on a
silicon surface having a (100) crystallographic orientation. An aqueous
solution of an alkali metal hydroxide is heated to approximately
85.degree. C. whereupon isopropyl alcohol is added. Separated silicon
wafers are immersed in the solution for approximately 45 minutes. The
wafers can be agitated for a limited time in the solution, and preferably
the wafers and solution are covered during the etching step. The resulting
pyramids are on the order of 14 microns high and 20 microns on each side
of the base. The overlap of the pyramids provides desired random locations
for the pyramids. |
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Title Information  |
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| Publication Date |
April 17, 1990 |
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| Filing Date |
March 31, 1989 |
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Title Information  |
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| Market Size |
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Market Review  |
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Technical Review  |
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Claims  |
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We claim:
1. A method of fabricating a light-trapping textured surface of a
photovoltaic cell comprising the steps of
(a) providing silicon wafers having surfaces with (100) crystallographic
orientation,
(b) providing an aqueous solution of an alkali metal hydroxide,
(c) heating said aqueous solution to approximately 85.degree. C.,
(d) adding isopropyl alcohol to the heated aqueous solution,
(e) immersing said silicon wafers in said heated aqueous solution for
sufficient time to etch surfaces of said wafers and form pyramidal shapes
on said surfaces, and
(f) removing and rinsing said silicon wafers in deionized water.
2. The method as defined by claim 1 wherein step (b) includes providing
potassium hydroxide.
3. The method as defined by claim 2 wherein step (b) includes providing 100
ml of deionized water for every gram of potassium hydroxide, and step (d)
includes providing 60 ml of isopropyl alcohol for every 8 grams of
potassium hydroxide.
4. The method as defined by claim 3 wherein step (e) includes immersing
said silicon wafers for approximately 45 minutes with the temperature of
said aqueous solution being maintained at approximately 85.degree. C.
5. The method as defined by claim 4 wherein the temperature of said aqueous
solution is maintained at 85.degree. C. +1.degree. C.
6. The method as defined by claim 4 and further including the step of
agitating said silicon wafers in said aqueous solution for a limited
period of time.
7. The method as defined by claim 6 wherein said limited period of time is
approximately 5 minutes.
8. The method as defined by claim 7 and further including the step of
covering said silicon wafers and said aqueous solution during step (e).
9. The method as defined by claim 1 and further including the step of
agitating said silicon wafers in said aqueous solution for a limited
period of time.
10. The method as defined by claim 9 wherein said limited period of time is
approximately 5 minutes.
11. The method as defined by claim 1 and further including the step of
covering said silicon wafers and said aqueous solution during step (e). |
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Claims  |
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Description  |
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BACKGROUND OF THE INVENTION
This invention relates generally to photovoltaic cells, and more
particularly the invention relates to an improved method of forming a
light-trapping surface for a photovoltaic cell.
The photovoltaic cell relies on photons of an impinging radiation source
such as the sun to generate electron-hole pairs in a semiconductor body.
The electrons and holes migrate to p- and n-doped regions in the
semiconductor body to establish a voltage differential and current flow.
The efficiency of the photovoltaic cell depends in part on preventing
photons from escaping the semiconductor body by reflection or otherwise
prior to forming an electron-hole pair. It is known that the texturing of
a surface of a semiconductor body will reduce photon loss as the textured
surface acts as a light trap by rereflecting escaping photons back into
the semiconductor body.
Heretofore, attempts to trap the light have included roughening a surface
mechanically by sand-blasting or molding and by selective dissolution by
acids or bases depending on the material utilized in fabricating the
photosensitive device.
Chemical etching has been employed in forming the textured surface in a
silicon substrate. It is known that an anisotropic etchant can be used to
etch a silicon surface having a (100) crystallographic orientation to form
pyramidal shapes having sides with (111) crystallographic orientation. See
for example Green and Campbell, "Light Trapping Properties of Pyramidally
Textured and Grooves Surfaces," Conference Record, 19th IEEE Photovoltaic
Specialists Conference, May 4-8, 1987. Green and Campbell discuss the
effectiveness of various textured surfaces including regular pyramids,
random pyramids, and Lambertian surfaces. However, Green and Campbell do
not discuss the processing of silicon bodies to achieve the optimal
surfaces.
Hall U.S. Pat. No. 4,427,839 discloses a process for forming inverted
pyramids on the surface of a silicon body by photoresist masking and
etching. Other techniques omit the passivation and photolithography such
as Bailey et al., U.S. Pat. No. 4,137,123. Bailey et al. teach etching a
(100) silicon surface by an anisotropic etch including silicon in the
etchant. The preferred texturing is accomplished by mixing 0-75% by volume
ethylene glycol, 0.05-10% by weight potassium hydroxide, and the balance
being water plus silicon particles or silicon-containing compounds such as
potassium silicate and sodium silicate. Temperatures range from 50.degree.
C. to 100.degree. C. An alternate to the ethylene glycol is mentioned,
namely isopropyl alcohol.
SUMMARY OF THE INVENTION
An object of the present invention is an improved method of fabricating a
textured surface for a photovoltaic cell.
Another object of the invention is an improved light-trapping surface
formed by isotropic etching of silicon.
Another object of the invention is increased photovoltaic cell efficiency.
Briefly, an aqueous solution of alkali metal hydroxide, such as potassium
hydroxide or sodium hydroxide, is dissolved in deionized water and heated
to approximately 85.degree. C. Isopropyl alcohol is then added to the
solution. A group of separated and cleaned silicon wafers having surfaces
with (100) crystallographic orientation are immersed in the solution and
then covered. After a period of time, the cover and the wafers are removed
and the wafers are rinsed in deionized water and then dried.
The resulting textured surface has large pyramids (e.g. approximately 20
microns per side at the base and 14 microns high) with sides having (111)
crystallographic orientation. The overlapping of the pyramids provides
somewhat smaller pyramids and a desired random location of the pyramids.
The process has proved to be consistent in reproducing a textured surface
of desired light-reflecting characteristics.
The invention and objects and features thereof will be more fully
understood from the following detailed description and appended claims
when taken with the drawing.
BRIEF DESCRIPTION OF THE DRAWING
FIG. 1 is a flow diagram of the process in forming an optimum textured
surface in accordance with the invention.
FIG. 2 is a scanning electron micrograph (2,250.times.magnification) of a
surface etched in accordance with the invention and viewed from a
45.degree. angle from the surface.
DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS
Referring now to the drawing, FIG. 1 is a flow diagram of the process for
forming a textured surface of a photovoltaic cell in accordance with the
invention. The invention utilizes an anisotropic etchant to etch the
surfaces of silicon wafers having (100) crystallographic orientation to
achieve a textured pyramidal surface with pyramids having an optimum size
and random orientations.
In accordance with a preferred embodiment of the invention, 80 grams of an
alkali metal hydroxide, sodium hydroxide or potassium hydroxide, for
example, is dissolved in 8,000 milliliters of deionized water. The
solution is then heated to 85.degree. C., and 600 milliliters of isopropyl
alcohol is then added.
Thereafter, a group of separated and cleaned silicon wafers having (100)
crystallographic surface orientations are immersed in the solution. The
solution container is then covered to prevent evaporation and permit
repeat utilization of the solution for other groups of wafers. After 45
minutes at approximately 85.degree. C., the cover is removed and the group
of wafers is withdrawn from the solution. The wafers are rinsed in
deionized water, and then dried.
The wafers can be agitated for a limited period of time (e.g. five minutes)
upon initial immersion in the etchant solution, but this is not critical.
Tests have been performed which varied the temperature of the etchant
solution by +/-10.degree. C., but a temperature of 85.degree. C., plus or
minus 1.degree. C., has proved to be optimum. The provision of the lid on
the container is essential if the solution is to be used in subsequent
wafer processing.
FIG. 2 is a scanning electron micrograph (10,000.times.magnification) of a
surface etched in accordance with the invention and viewed from a
45.degree. angle from the surface. The larger pyramids have base
dimensions of 20.8 microns per side, and a pyramid height of 14.5 microns.
The overlap of the pyramids provides some smaller pyramids, and the
desired random location of the pyramids is visible from the micrograph.
The process in accordance with the invention provides a textured surface
for a photovoltaic cell with pyramids of a preferred size and random
orientation for optimum light-trapping.
While the invention has been described with reference to specific
embodiments, the description is illustrative of the invention and is not
to be construed as limiting the invention. Various modifications and
applications may occur to those skilled in the art without departing from
the true spirit and scope of the invention as defined by the appended
claims.
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Description  |
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