A semiconductor accelerometer includes a mass portion formed at a center of a silicon plate, a frame portion formed around the circumference of the silicon plate so as to surround the mass portion and a diaphragm portion formed in the silicon plate between the mass portion and the frame portion so as to bridge the mass portion with the frame portion, one of major surfaces of the silicon plate serving as a common continuous major surface for the mass portion, frame portion and diaphragm portion. Piezoresistance elements are formed on the common continuous major surface at the diaphraqm portion and an additional Au film is formed on the common continuous major surface at the mass portion. The additional Au film constitutes in combination with the mass portion a weight which responds to an acceleration acting thereon. The mass of the additional Au film is selected in such a manner that the center of gravity of the weight is located within an area in the mass portion having a depth corresponding to the thickness of the diaphragm portion.

A mass flow sensor having a thin substrate and a resistor element arranged on the thin substrate. The thin substrate is stretched on a fixed substrate. In a stretched area, at which, in response to mechanical loading of the thin substrate, the mechanical stresses concentrate, a resistor element for detecting ruptures is arranged. As a result of a rupture in the stretched area, this rupture-detection resistor is interrupted, and the rupture can be confirmed due to the sudden increase in the resistance of the resistor, caused thereby.

A sensor for measuring pressure and acceleration is proposed; it has a monocrystalline silicon substrate (10) with a succession of thin films applied to its first primary surface. A deflectable membrane (12) in a frame (11) is structured out of the silicon substrate (10), and the membrane (12) is formed in the first primary surface. The membrane (12) has a reinforcement zone. In the succession of thin films that is applied to the first primary surface, there is a structure (50) having at least one first substructure, which is disposed parallel to the first primary surface of the silicon substrate (10). There is a gap between the first substructure and the silicon substrate (10). The first substructure is joined to the membrane (12) in the region of the reinforcement zone. It protrudes past the membrane (12) and extends at least partway over the frame (11). This first substructure forms one electrode of a capacitor. At least one first counterelectrode (161, 162) of the capacitor is disposed opposite the first substructure, in the region of the frame (11).

A cantilever for a scanning probe microscope is disclosed. The cantilever includes a piezoresistor for detecting the deflection of the cantilever, and a tip which is formed integrally with the cantilever. A process of fabricating such a cantilever is also disclosed, the process yielding a tip which has a high aspect ratio and a small radius of curvature at its apex. A combined atomic force/lateral force microscope including two or more piezoresistors responsive to both the bending and torsion of the cantilever is also disclosed.

A multibeam structure measures displacement of one or more response elements to detect multiple components of applied force. The flexible beams are each coupled to a response element which may be displaced by a force arising from linear acceleration, angular acceleration, fluid flow, electric/magnetic/gravitational fields, and others sources. The displacement of the response element is detected with a variety of sensing methods including capacitive and piezoresistive sensing.