|
Description  |
|
|
BACKGROUND OF THE INVENTION
The present invention is directed to a novel chip carrier package and an
improved method for interconnecting conductive layers in a chip carrier
package.
With the advent of sophisticated equipment in the electrical and electronic
fields, it has become necessary that the components of the various pieces
of equipment conform to high standards which are set forth in the
specifications of these components. For example, circuit boards which are
used in relatively complicated pieces of equipment such as main frame
computers, must be of a relatively high standard of quality in order to
function in an efficient manner for a long period of time without
deteriorating or breaking down, and thus causing an interruption in the
function of the machine. This high quality of material and design is
opposed to pieces of equipment requiring a lower standard of quality such
as those used in personal computers, high quality television equipment,
radios etc.
Circuit boards are prepared by laminating conducting sheets, e.g. copper
sheets, with sheets of electrical insulating materials, such as glass
fiber reinforced polyester resin sheets or nonreinforced polyimides. Such
electrical circuit boards may be either rigid or flexible, and are further
classified as single-sided (metal foil on one side of the insulating
material only), double-sided (metal foil on both sides of the insulating
material), or multilayered. Further for those circuit boards which are
multilayered, the conductive layers within the package must be
interconnected, for example with plated through holes as well as
interconnected to other circuit boards or electrical components. Further
still, there are multilayered circuit boards which contain a semiconductor
chip, called chip carrier packages.
Current trends in the interconnect industry, especially for computer uses
are moving toward higher signal, power and ground line densities, smaller
size packages, and increased performance characteristics, such as less
crosstalk, lower inductances, and greater resistance to failure from
thermal cycling mechanical stress. These trends have placed greater
demands upon design characteristics of multilayer interconnect packages
such as chip carrier packages, and have made it more difficult to
interconnect multiple conductive layers.
U.S. Pat. No. 4,517,050 discloses the method by which a conductive
through-hole hole is formed through a dielectric sandwiched between
conductors by forming a noncircular hole in a conductor, etching a hole
through the dielectric and by deforming the conductor which has been
undercut during the etching. This method does not permit for high dense
packing of lines, as the holes formed in the conductive layer and the
annular ring of conductor around such holes take up space needed for the
circuit lines. This method can take up 22.5 mils on the conductive layer
for interconnection purposes.
U.S. Pat. No. 3,969,815 discloses a process for providing electrical
interconnection of two metal layers positioned on opposite sides of a
substrate. A hole is initially drilled or bored completely through the two
metal layers and the intermediate insulating layer. The hole in the
insulating layer is enlarged by a selective etching process which only
etches the insulating layer to form an enlarged annular hole in the
insulating layer which undercuts the metal layer portions. Thereafter
these overhanging metal portions on opposite sides of the insulating layer
are deformed by pressure to contact or almost contact one another. The
deformed metal portions are coated by galvanic metal which is overcoated
by a thin layer, preferably tin, to form a conductive path. This process
requires much tooling and set up work for the manufacture of the circuit
board.
SUMMARY OF THE INVENTION
It is an object of this invention to provide a method of interconnecting an
uppermost conductive layer to a first conductive layer below, without
drilling and the associated tooling requirements.
A further object of this invention is to provide a method of
interconnecting conductive layers in which circuit line densities on a
conductive layer are not limited by the interconnection between the
conductive layers. Interconnection of circuit lines from layer to layer,
as taught by prior art methods, consumes much space on the layers thus
reducing the amount of space available for circuit lines. Distances
between circuit line centers can be as small as 6 mil in this invention,
so that the density of circuit lines on a layer is increased.
Another object of this invention is to provide a method of interconnecting
conductive layers at the inner and/or outer edges of the conductive layers
of a chip carrier package. Many prior art methods teach interconnection of
conductive layers interior to an electrical package.
Another object of this invention is to provide for an electrical multilayer
conductive package which partitions the power supply system of the package
from the signal transmission system as much as practical in order to
optimize the performance of both.
Still another object of the invention is to provide for an electrical
multiconductive layer package in which the interconnection from a first
conductive layer to a second conductive layer is flexible and yet very
reliable so that the total package has excellent resistance to failure
from thermal cycling mechanical stress.
The present invention is directed to a chip carrier package comprising
(a) a receptacle containing side walls adapted to hold a chip in a fixed
relationship and allow leads from the chip to make electrical contact with
plurality of electrical conductors,
(b) a first plurality of electrical conductors present in a plane wherein a
portion of each electrical conductor terminates at or adjacent to a side
wall of the receptacle to enable electrical contact with a second
plurality of electrical conductors,
(c) a first insulating layer which faces one surface of the first plurality
of electrical conductors,
(d) a second insulating layer which faces an opposite surface of the first
plurality of electrical conductors and separates the first plurality from
a second plurality of electrical conductors whereby the second insulating
layer terminates in a wall adjacent but separate from a side wall of the
receptacle whereby terminal portions of the first plurality of electrical
conductors are exposed,
(e) a second plurality of electrical conductors present in a plane wherein
terminal portions of at least a portion of the conductors initially in the
plane are bent to make electrical connection with the first plurality of
electrical conductors.
Also the present invention is directed to a method of forming the chip
carrier package.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is an angled perspective view of a chip carrier package.
DETAILED DESCRIPTION OF THE INVENTION
The present invention is particularly adapted for forming interconnections
between conductive layers separated by dielectric layers in a chip carrier
package. More particularly, the present invention relates to the formation
of an unsupported terminus of the circuit lines on an uppermost conductive
layer and the subsequent interconnection of the unsupported terminus to
bonding pads sites located on an adjacent conductive layer below.
A laminate of an electrically conductive composite, consisting of a metal
conductive layer and a dielectric layer with for example an adhesive layer
therebetween, are conventional starting materials for forming multilayer
boards such as chip carrier packages and are suitable herein. Generally
the dielectric layer will be at least one mil in thickness and the
conductive layer will be 0.7 to 2.8 mils thick, e.g., copper foil,
although both thinner and thicker layers can be used. The materials of
construction of the dielectric insulating layer are not critical except
that they have the appropriate electrical properties and can be etched
using plasma, chemical or laser etching. Examples of materials that are
suitable as the dielectric layer include polyimide thermosetting resin
polymers, and perfluorinated polymers, such as polytetrafluoroethylene
(TFE), copolymers of tetrafluoroethylene and hexafluoropropylene and
copolymers of tetrafluoroethylene and perfluoro(propyl vinyl ether) and
the like. Even dielectric materials which are supported such as
polyaramids in either form of woven or nonwoven fabric such as made from
continuous fibers are suitable in this invention so long as the support
can also be etched. Metals suitable for the metal conductive layer include
copper, silver and gold, with copper being preferred. A particularly
preferred laminate is a copper clad polyimide film.
On each of the conductive layers the desired circuit patterns are formed of
circuit lines for the package application. This includes the conductive
layer which uppermost on the package and which has the terminus of circuit
lines for attachment to an adjacent conductive layer. The circuit lines
are signal lines, but they can be ground or power lines or pads. The
circuit lines are formed preferably by chemical etching which is well
known in the formation of printed circuits. An example of such chemical
etching involves lamination of a negative acting photosensitive film, for
example Riston.RTM. 218R photoresist to the conductor surface which does
not face the dielectric layer, exposing the photosensitive polymer to
actinic radiation through a photomask, developing and removing unexposed
photosensitive polymer to expose portions of the metal layer and
thereafter chemically etching completely through the thickness of the
exposed conductive layer. The chemical etching step removes little or no
material from the dielectric polymer layer. A suitable process is
disclosed in Celeste U.S. Pat. No. 3,469,982. Positive working
photopolymers with processing techniques well known in the art can
likewise be used, e.g., Cohen and Heiart U.S. Pat. No. 4,193,797.
Those conductive layers which form the base of the package are laminated
and their respective circuit lines are interconnected to one another by
using the known art of photoresist and etching as disclosed in Johnson
U.S. Pat. No. 4,472,238, Fritz and Johnson U.S. Pat. No. 4,517,050 and
Fritz U.S. Pat. No. 4,635,358.
The formation of the terminus of the circuit lines for the uppermost
conductive layer on the circuit side of a metal, adhesive, dielectric
laminate structure, is accomplished by conventional etching methods. A
metal mask is placed over the dielectric layer of the laminate structure
so that various circuit lines having a longer length extend into the
center of an etched pattern of signal lines and power and ground lines or
pads on the conductive layer where a chip cavity will eventually exist.
The laminate structure with mask so positioned, is then etched to undercut
and remove the dielectric underlayer of the metal circuit lines extending
into cavity area. This etching step also forms a central cavity as the
dielectric is completely removed and no metal, other than that of the
extended circuit lines remains in the area.
An example of an etching technique which etches completely through the
dielectric layer and laterally to undercut the conductive layer and is
suitable herein is liquid chemical etching. The etching technique used is
dependent upon the type of dielectric material to be removed by the
etching process. Particularly preferred method is liquid chemical etching.
Liquid etching techniques by which a liquid can etch selectively through a
polymeric dielectric are well-known in the art. The etchant will not cause
a substantial removal of the conductive material. Suitable etchants
include those disclosed in U.S. Pat. No. 3,969,815, and Kreuz and Hawkins
U.S. Pat. No. 4,426,253, e.g. a sulfuric acid solution can be used for
polyester and epoxide resins while a caustic alcholic solution is suitable
for a polyimide. Also etching includes use of solvents capable of removing
areas of the dielectric not masked by the conductive matal without any
deleterious effect on the metal may be used. Examples of solvents are
tetrachloroethylene, methyl chloroform, mixture of 90% tetrachloroethylene
and 10% isobutyl alcohol (by volume) and chromic acid.
Two other examples of etching techniques which etch completely through the
dielectric layer are laser etching and plasma etching. A method whereby
etching of the dielectric is accomplished by an intense beam of light,
i.e., laser, is also known to those skilled in the art. This method uses
an excimer laser, which produces ultraviolet light. Factors which control
the capability and efficiency of the laser are the energy density of the
laser pulse, the ablation rate which is the etch depth in the dielectric
per pulse and the pulse power. Suitable setting for laser etching a
polyimide are 800 to 900 millijoules/cm.sup.2 for energy density, ablation
rate of 0.2 microns/pulse, and average pulse power of 200 millijoules per
pulse. The dielectric is ablated by the laser by either a step and repeat
or a scan area method. Frequently a char residue remains where the laser
has etched the dielectric. The char residue is easily removed by various
techniques. In plasma etching techniques however, a separate metal mask
with the window cut out where the cavity will be is placed on the
dielectric layer of the uppermost conductive layer. Also during plasma
etching, the lines of the circuit pattern on the metal conductive layer
can be appropriately formed to serve as a mask for the dielectric since
the plasma attacks the dielectric where the dielectric layer is not
protected by the metal pattern or mask. The metal is substantially
unaffected by the plasma or, at least, the etching rate of the dielectric
is considerably faster than the etching rate of the conductor. Various
types of plasma gases may be used. The etching gas is chosen so as to
produce species which react chemically with the material to be etched to
form a reaction product which is volatile. Mixtures of various plasma
gases can also be used. A preferred gas composition to be used where the
dielectric is a polyimide and the mask is copper is carbon
tetrafluoride/oxygen in the ratio of 50/50 to 10/90 by volume.
While laser or chemical etching using a metal mask generally provides
straight well-defined edges to the cavity window, the use of plasma
etchant requires that an insulator be applied to the underside of the
circuit layer on the dielectric layer between the dielectric and a
separate metal mask. This apparently minimizes localized cooling of areas
of the cavity edge by circuit lines which conduct heat away from the area
around them and causing uneven etching. Paper acting as an insulator, for
this purpose, was that which was found on the polyimide adhesive. The
paper is removed upon completion of this etching method.
An outstanding advantage is the interconnection does not limit the circuit
line densities on the conductive layer. Rather the limitations are those
of the photoresist to resolve the lines, the tensile strength of the metal
and the ability to plate down the extended lines of the uppermost
conductive layer. In this invention, the circuit lines on a conductive
layer, which is to interconnect with another conductive layer, can have as
close as 6 mil and less centers, i.e., a center of an electrical conductor
is spaced 6 mils from a center of an adjacent conductor, such as 3 mil
wide spaces between circuit lines of 3 mil width. Spacing of conductors of
8, 10, or 12 mils can be easily accomplished. In prior art methods the
density of circuit lines on a conductive layer is limited due to the space
allotted for the via interconnection of the circuit lines to an adjacent
conductive layer below. Interconnection whereby a via is drilled through
the conductive layer and the dielectric layer below, and the via enlarged
by etching as in U.S. Pat. No. 3,969,815 allows for 10 to 12 mils center
to center spacing on the conductive layer. Interconnection whereby the via
is formed in the conductive layer by photolighographic methods, and then
the dielectric is etched away underneath the hole as taught by Fritz and
Johnson in U.S. Pat. No. 4,517,050, allows for about 22.5 mils center to
center spacing. Thus this invention provides for an increased density of
circuit lines on a conductive layer over the prior art techniques.
The uppermost layer with the unsupported terminus of circuit lines
extending into the opening or cavity is attached to the package base such
that a shelf which is of a wall construction which can be sloping or at
right angles is formed on the top conductive layer of the package base.
Attachment of the uppermost layer to the top of the package base, is
accomplished by laminating in register, as is well known in the art, with
an adhesive layer between the two layers. Thereafter, the extending
circuit lines are deformed to come in mating contact with the bonding pads
exposed on the shelf of the top conductive layer on the package base.
Methods which are suitable for deforming metal lines are by mechanical
means or by ultrasonic bonding which are well known to those skilled in
the art. Mechanical deformation of the extending metal lines can occur in
a laminating press. An instrument suitable for ultrasonic deformation of
the extending metal lines is manufactured by Kulick & Soffa, described as
a heavy gauge ultrasonic wedge bonder, model number 4127.
Thereafter, if necessary, the deformed electrically conductive material may
be electrolytically plated with a metal such as copper, electrolessly
plated or soldered or welded to complete or ensure an electrically
conductive path.
Turning to the FIGURE, its embodiment shows a chip carrier package (10)
comprising of a base (12) with 3 layers of conductive planes (14) which
are used as power and ground pathways in the package (10). Underneath
between each plane (14) is a dielectric layer (16). The conductive paths
used for power and ground for the package (10) are interconnected by means
of a series of interconnecting vias (15) formed through the dielectric
layers (16) interposed between each plane (14) to paths that are on the
top plane layer (18) of the base (12). Selective paths on the top plane
layer (18) centrally terminate to contact pads (19). Above the base (12)
is a dielectric layer and a circuit layer which has a plurality of signal
lines (24), and bonding pads (not shown) for connecting the chip to power
and ground layers buried within the package, called the signal layer (20).
The signal layer (20) of the package (10), is positioned such that the top
plane layer (18) of the base (12) forms a shelf (22) extending out from
under the signal layer (20) thereby exposing selective contact pads (19).
The terminus (23) of the ground and power pads (not shown) on the signal
layer (20) extend over the cavity formed in the dielectric layer under the
signal layer (20) and are deformed to connect in a mating fashion to the
exposed contact pads (19) on the shelf (22) of the top plane layer (18) of
the base (12). The side of the base (12) opposite the signal layer (20) is
affixed to a body of metal (26). A cavity or receptacle (28) extends
through all of the base (12) forming side walls and signal (20) layers and
has as its support the body of metal (26). At a time in the future the
package is completed for use by mounting a semiconductor chip on the body
of metal (26) and connecting the chip with conductors to the signal lines
and to the bonding pads that connect the ground and power paths to the
power and ground paths buried within the package.
To further illustrate the present invention the following example is
provided.
EXAMPLE 1
An image was formed on the copper surface of a Pyralux.RTM. LF8510
(manufactured by E. I. du Pont de Nemours and Company) flexible circuit
laminate, composed of a 1 mil layer of a polyimide dielectric permanently
bonded to a 0.5 mil layer of copper with 1 mil layer of Pyralux.RTM. WA
adhesive. All adhesive used in this Example is Pyralux.RTM. WA adhesive
(manufactured by E. I. du Pont de Nemours and Company) unless otherwise
indicated. A circuit pattern was formed on the copper surface of the
flexible circuit laminate material by process of chemical etching, as
described in U.S. Pat. No. 3,469,982. A sandwich was created of first the
flexible circuit material with the newly formed circuit pattern, a
Pyralux.RTM. WA 1 mil adhesive layer on top of this first layer, and a new
piece of Pyralux.RTM. flexible circuit laminate on top of the adhesive
layer. The sandwich was permanently bonded to a metal substrate, for
example an aluminum sheet, by contacting the bottom of the first layer,
i.e., the dielectric, to the metal substrate with a 1 mil layer of
Pyralux.RTM. WA adhesive. Thus the first and second plane layers were
attached to the metal substrate.
Via windows with extended "tabs" were formed in the top copper layer cover
(which is the second layer of the flexible circuit laminate) by using
known art of photoresists and copper etching as disclosed in U.S. Pat. No.
4,517,050. The dielectric layer under the via window "tabs" was removed by
using a CO.sub.2 laser (manufactured by Coherent General Corp.) followed
by plasma etching the sandwich in a carbon tetrafluoride and oxygen
mixture for 5 to 15 minutes. The via window "tabs" were deformed
mechanically to mate with the corresponding pads formed in the layer below
(first layer) (as described in the above cited patents). A photoresist
layer was applied to the top copper layer (second layer), then image-wise
exposed through a photomask, to form the circuit lines and ground planes
on the second layer. The deformed tabs were plated with copper (using an
acid copper bath) and then solder (as an etch resist) to their
corresponding pad below to make a permanent electrical contact. The
photoresist layer was removed and all excess or background copper from the
imaged pattern was etched away (using an ammoniacal etchant). Finally the
solder etch resist was stripped.
The sandwich was cleaned and baked to prepare for the next layer of
flexible circuit composite. The next layer (third layer) of the flexible
circuit composite was laminated to the previously prepared layer with an
adhesive layer therebetween.
The previously stated steps, that of forming vias, etching away the
underlying dielectric layer, deforming the tabs, applying a photoresist
layer, exposing to form circuit lines, plating the deformed tabs, removing
the photoresist, etching away undesired copper, and removing the solder
resist layer were repeated for the third layer.
The sandwich was cleaned and baked to prepare for the next layer of
flexible circuit composite. The next layer (fourth layer) of the flexible
circuit composite was laminated to the previously prepared layer with an
adhesive layer therebetween.
The previously stated steps, that of forming vias, etching away the
underlying dielectric layer, deforming the tabs, applying a photoresist
layer, exposing to form circuit lines, plating the deformed tabs, removing
the photoresist, etching away undesired copper, and cleaning and baking
were repeated for the fourth layer. Thus a base element with four
conductive circuit planes was formed.
The uppermost layer, a signal layer, was prepared by etching the signal
lines as described previously a new piece of Pyralux.RTM. flexible circuit
laminate. A window with certain leads extending into its open space was
formed in the center of the signal layer flexible circuit using an
aluminum mask with a cut out for the window was placed directly over the
area to be etched on the adhesive side of the circuit and a sheet of
aluminum protecting the signal side. An adhesive layer with white paper
backing and a window in the center to correspond to aluminum mask was
fashioned by a punch and die, and tack laminated to the polyimide side of
the signal layer. The paper used for this purpose was that found on the
Pyralux.RTM. WA adhesive. The signal layer was plasma etched with the
paper removed after plasma etching.
The signal layer was temporarily affixed to the top layer (fourth layer) of
the base element. The signal layer was positioned such that a shelf was
formed by the fourth layer containing the contact pads was exposed.
Registered holes were formed in the signal layer and the base element
using a programmed drill. Pins were inserted into the holes. Then the
uppermost signal layer and the base element were laminated together so as
to cause the adhesive tacked to the signal layer to bond to the base
element and permanently cure while maintaining registration with the
bottom layer. The registration pins were removed. The lines for power and
ground distribution of the uppermost signal layer which extend into the
window were deformed to mate with a corresponding contact pad residing on
the shelf of the base element. The extended lines were deformed by
mechanical means. The press was pressurized to 1,000 psi to collapse the
extended lines onto the contact pads on the shelf. The deformed lines were
plated with their mating circuit lines to form a continuous permanent
bonded line thus establishing an interconnection from the uppermost signal
layer to the layer just below. A cavity from the window edge to the top of
the metal support was routed by means of a numerically controlled router
into the layers of the base element.
* * * * *
|
|
|
|
|
Description  |
|