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| United States Patent | 5009476 |
| Link to this page | http://www.wikipatents.com/5009476.html |
| Inventor(s) | Reid; Lee R. (Plano, TX);
Yuan; Han-Tzong (Dallas, TX) |
| Abstract | The disclosure relates to a complex circuit composed of a circuit board
which is formed of crystalline elemental silicon in the form of a slice
and circuit component in the form of semiconductor integrated circuits
thereon which are preferably formed of a Group III-V compound. Signals
from each of the integrated circuits are transmitted to other integrated
circuits on the board or externally of the board either by conventional
printed conductors on the board or, preferably, by means of a laser formed
in each integrated circuit at each output terminal thereon which transmits
light signals along light conducting members in the silicon board to photo
responsive elements at the input locations on other ones of the integrated
circuits on the board for external to the board. The light signal is
transferred from an integrated circuit output to an integrated circuit
input or to a device external to the board by means of light conducting
members. These light conducting members may be light conducting rods
positioned either on the surface of the board or in grooves formed
therein. Alternatively, the light conducting members can be silicon
dioxide paths formed in the silicon circuit board by selective oxidation
of the silicon board to form silicon dioxide light conducting paths
therein. Each light conducting path is coupled between a light emitting
output from an integrated circuit and a light receiving input of another
integrated circuit or travels to the edge of the circuit board for
transmission external of the board. |
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Title Information  |
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Drawing from US Patent 5009476 |
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Semiconductor layer with optical communication between chips disposed
therein |
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| Publication Date |
April 23, 1991 |
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| Filing Date |
January 16, 1984 |
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Title Information  |
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Claims  |
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We claim:
1. An optical communication system which comprises:
(a) support means of semiconductor material having a surface;
(b) optical frequency signal transmission means disposed within and forming
a part of said support means and extending to said surface;
(c) a first semiconductor element having an optical frequency signal
transmitter disposed at the surface of said support and optically coupled
to said transmission means; and
(d) a second semiconductor element having an optical frequency signal
receiver disposed at the surface of said support and optically coupled to
said transmission means.
2. An optical communication system as set forth in claim 1 wherein said
first semiconductor device is formed from a Group III-V material.
3. An optical communication system as set forth in claim 2 wherein said
transmission means is a silicon oxide path.
4. An optical communication system as set forth in claim 2 further
including a plurality of mesas formed in the surface of said support, said
first and second semiconductor chip being disposed on predetermined ones
of said means.
5. An optical communication system as set forth in claim 4 wherein each of
said semiconductor chips includes conductive pads thereon contacting said
means, said means being electrically conductive.
6. An optical communication system as set forth in claim 3 further
including a plurality of mesas formed in the surface of said support, said
first and second semiconductor chip being disposed on predetermined ones
of said means.
7. An optical communication system as set forth in claim 6 wherein each of
said semiconductor chips includes conductive pads thereon contacting said
mesas, said mesas being electrically conductive.
8. The system of claim 3 wherein said support means is crystalline silicon.
9. The system of claim 2 wherein said support means is crystalline silicon.
10. An optical communication system as set forth in claim 2 wherein said
Group III-V material is gallium arsenide.
11. An optical communication system as set forth in claim 10 wherein said
transmission means is a silicon oxide path.
12. An optical communication system as set forth in claim 10 further
including a plurality of mesas formed in the surface of said support, said
first and second semiconductor chip being disposed on predetermined ones
of said mesas.
13. An optical communication system as set forth in claim 12 wherein each
of said semiconductor chips includes conductive pads thereon contacting
said mesas, said means being electrically conductive.
14. An optical communication system as set forth in claim 11 further
including a plurality of mesas formed in the surface of said support, said
first and second semiconductor chip being disposed on predetermined ones
of said mesas.
15. An optical communication system as set forth in claim 14 wherein each
of said semiconductor chips includes conductive pads thereon contacting
said mesas, said mesas being electrically conductive.
16. The system of claim 9 wherein said support means is crystalline
silicone.
17. The system of claim 3 wherein said support means is crystalline
silicon.
18. An optical communication system as set forth in claim 1 wherein said
transmission means is a silicon oxide path.
19. An optical communication system as set forth in claim 18 further
including a plurality of mesas formed in the surface of said support, said
first and second semiconductor chip being disposed on predetermined ones
of said mesas.
20. An optical communication system as set forth in claim 19 wherein each
of said semiconductor chips includes conductive pads thereon contacting
said mesas, said mesas being electrically conductive.
21. The system of claim 7 wherein said support means is crystalline
silicon.
22. The system of claim 1 wherein said support means is crystalline
silicon.
23. An optical communication system which comprises:
(a) support means having a substantially planar surface;
(b) optical frequency signal transmission means disposed on said surface;
(c) a first semiconductor element having an optical frequency signal
transmitter disposed on said support and optically coupled to said
transmission means; and
(d) a second semiconductor element having an optical frequency signal
receiver disposed on said support and optically coupled to said
transmission means;
(e) further including a plurality of means disposed at the surface of said
support, said first and second semiconductor chips being disposed on
predetermined ones of said mesas.
24. An optical communication system as set forth in claim 23 wherein each
of said semiconductor chips includes conductive pads thereon contacting
said mesas, said mesas being electrically conductive.
25. An optical communication system as set forth in claim 23 wherein said
first semiconductor device is formed from a Group III-V material.
26. An optical communication system as set forth in claim 25 wherein said
Group III-V material is gallium arsenide.
27. An optical communication system as set forth in claim 26 wherein said
transmission means is a silicon oxide path formed from said support means.
28. An optical communication system as set forth in claim 27 wherein each
of said semiconductor chips includes conductive pads thereon contacting
said mesas, said mesas being electrically conductive.
29. An optical communication system as set forth in claim 25 wherein said
transmission means is a silicon oxide path formed from said support means.
30. An optical communication system as set forth in claim 29 wherein each
of said semiconductor chips includes conductive pads thereon contacting
said mesas, said mesas being electrically conductive.
31. An optical communication system as set forth in claim 23 wherein said
transmission means is a silicon oxide path formed from said support means.
32. An optical communication system as set forth in claim 31 wherein each
of said semiconductor chips includes conductive pads thereon contacting
said means, said means being electrically conductive.
33. An optical communication system which comprises:
(a) support means of semiconductor material having a substantially planar
surface;
(b) optical frequency signal transmission means disposed within and forming
a part of said support means and extending to said surface;
(c) a first semiconductor chip having optical frequency transmitting
capability disposed on said support and coplanar with and optically
coupled to said transmission means; and
(d) a second semiconductor chip having optical frequency receiving
capability disposed on said support means and coplanar with and optically
coupled to said transmission means. |
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Claims  |
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Description  |
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BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to a system for communication between semiconductor
chips on a semiconductor substrate.
2. Description of the Prior Art
Prior art complex semiconductor circuits have often been constructed by use
of plastic or ceramic circuit board having semiconductor packages mounted
thereon with interconnection or communication between semiconductor
packages taking place via conductors formed on the circuit board. Problems
of heat dissipation and cross talk are minimized in such circuits by
spreading out the components sufficiently on the circuit boards surface.
It is also known in the prior art that, as the signal being communicated
increases to a clock rate of over about 50 megahertz, the conductors on
the printed circuit board begin to act as transmission lines and display
capacitive and inductive properties. It is therefore necessary that
appropriate measures be taken as in the case of transmission lines to
obtain proper impedance matching to avoid reflections and the like. This
problem is relatively minor and, in general, no particular attention was
needed in the past if the check rate was below about 10 megahertz.
However, with the continued emphasis in high speed operation of the
components and with the increased miniaturization of the integrated
circuit chips themselves and the desire for higher packing density on the
printed circuit boards, the above noted problems become more and more of a
bottleneck. For example, the number of pins entering and exiting
integrated circuit packages is continually increasing due to the rapidly
increasing number of components contained therein. This materially
increases the problem of matching each pin and the path thereto or
therefrom from reflections and other transmission line type problems.
Furthermore, substantial heat will be generated in the input and output
drivers, both from the increase in component packing density per chip as
well as the increase in packing density of the chips on the printed
circuit board.
SUMMARY OF THE INVENTION
In accordance with the present invention, the above noted problems of the
prior art are substantially minimized and there is provided a complex
circuit composed of a circuit board which is formed of elemental silicon
in the form of a slice and circuit components in the form of semiconductor
integrated circuits thereon which are preferably formed of a Group III-V
compound. Signals from each of the integrated circuits are transmitted to
other integrated circuits on the board or externally of the board either
by conventional printed conductors on the board or, preferably, by means
of a laser formed in each integrated circuit at each output terminal
thereon which transmits light signals along light conducting members in
the silicon board to photo responsive elements at the input locations on
other ones of the integrated circuits on the board for external to the
board. It is therefore readily seen that each light emitting output will
be composed preferably of a laser diode or the like and each input member
will be composed preferably of a photo responsive diode or the like.
The light signal is transferred from an integrated circuit output to an
integrated circuit input or to a device external to the board by means of
light conducting members. These light conducting members may be light
conducting rods positioned either on the surface of the board or in
grooves formed therein. Alternatively, the light conducting members can be
silicon dioxide paths formed in the silicon circuit board by selective
oxidation of the silicon board to form silicon dioxide light conducting
paths therein. Each light conducting path will be coupled between a light
emitting output from an integrated circuit and a light receiving input of
another integrated circuit or travel to the edge of the circuit board for
transmission external of the board. The transmission of light frequencies
between circuit boards or the like permits replacement of a single light
channel for what would be required of a many pinned device and connector
and eliminates the problems caused thereby as noted hereinabove as well as
eliminating the driver circuits required to provide sufficient power for
communication between circuit boards in prior art standard non-light
frequency applications.
The light conducting member will be coupled to the light emitting member
and the light receiving member of the integrated circuits by standard
coupling means such as a light conducting epoxy or the like as are well
known in the art. Such coupling techniques are shown in "Photo-Coupled
Logic--A Hopeful Prospect", by D. A. Fraser pages 31 to 34; "Coupling
Light Sources to Fibers" by Mark L. Dakss, Laser Focus, December, 1975,
pages 31 to 34; Optical Waveguides Fabricated by Preferential Etching" by
Won-Tien Tsang, Cheng-Chung Tseng, and Shyh Wang, Applied Optics, Vol. 14,
No. 5, May, 1975, pages 1200 to 1206; "Optical Coupling From Fibers to
Channel Waveguides Formed on Silicon" by J. T. Boyd and S. Sriram, Applied
Optics, Vol. 17, No. 6, 15 March 1978, pages 895 to 898; "A Low-Scattering
Graded-Index SiO.sub.2 Planar Optical Waveguide Thermally Grown on
Silicon", by David E. Zelmon et al, Applied Physics Letters, Vol. 42, No.
7, 1 April 1983, pages 665 and 666; and "GaAs Optical Electronic Devices
for Signal Processing Application", by L. R. Tomesetta, SPIE Vol. 176
Guided Wave Optical Systems and Devices II (1979), pages 111 to 114, all
of which are incorporated herein by reference.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a top view of a complex electronic circuit in accordance with the
present invention;
FIG. 2 is a view taken along the line 2--2 of FIG. 1;
FIG. 3 is a schematic diagram of a chip optically coupled to a p a i r of
optical channels via a laser a nd a phototransistor;
FIG. 4 is a schematic diagram of a circuit in accordance with a further
embodiment of the invention; and
FIG. 5 is a schematic diagram of a plurality of stacked circuits in
accordance with the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENT
Referring now to FIGS. 1 and 2, there is shown a circuit board 1 formed of
a silicon slice and having positioned thereon a plurality of semiconductor
chips 3 preferably formed from a Group III-V material, which are secured
to the top surface of the board 1 by appropriate bonding techniques. A
plurality of fiber optic channels 5 are formed in or on the board in a
manner to be described in more detail hereinbelow. Coupling elements 7
couple outputs 9 (FIG. 3) from the chip 3 to optic fiber channels 5 and
also couple the optic fiber channels 5 to inputs 11 (FIG. 3) to the chips
3. Each of the chips 3 has either or both of a light emitting output
element 9 which can be in the form of a laser diode which is coupled to
one of the optic fiber channels 5 as shown in FIG. 3 and an input element
11, preferably in the form of a photo responsive diode which is also
coupled to an optic fiber channel 5. The optical fiber channels 5 as shown
in FIG. 3 also provide communication between plural circuit boards or a
circuit board and an external optical transmitter and/or receiver.
The fiber optic channel 5 can be formed in several ways. In accordance with
the first embodiment, grooves are formed in the upper surface of the
circuit board 1 and standard fiber optic elements 5 are deposited and
secured therein. When such standard fiber optic elements are utilized, the
material from which the circuit board is formed need not be silicon but
can be any standard board material. As a second alternative, the circuit
board 1 will be of crystalline silicon and the optic fiber channels 5 are
formed therein by standard semiconductor oxidation techniques wherein, for
example, a silicon nitride pattern will be formed on the surface of the
board 1 and the board will then either be etched in the regions where the
optic fiber channels are to be formed with subsequent oxidation of the
exposed silicon to fill the channel with silicon dioxide or,
alternatively, after pattern formation with silicon nitride, the exposed
silicon will be oxidized with subsequent optional etching back of the
silicon oxide formed to an appropriate level if desired or required. The
silicon dioxide formed by oxidation of the silicon board will act as an
optic fiber channel and will have light conducting properties as is shown
in the above mentioned publications.
The semiconductor chips 3 will preferably be formed from a Group III-V
compound, preferably gallium arsenide, so that, in addition to circuit
components, either one or more laser diodes 9 or light responsive devices
11 or both can be formed in each of the chips to permit communication both
into and out of each chip to provide the I/O terminals therefore. It
should be understood that each chip can have a plurality of optical output
devices 9 and/or a plurality of optical input devices 11.
It is readily apparent that, since each of the optical fiber channels or
conductors 5 is a transmitter of light, and since light signals can go up
to about 2 GHz bandwidth, it is possible to replace, for example, 10
electrical signal paths by one light conductor 5, each with a 200 MHz
signal bandwidth. It is therefore apparent that, since plural different
signals can be placed on the same line, an equivalent number of input
and/or output terminals can be eliminated physically from the chip itself,
thereby materially decreasing the space requirement. In addition, since
optical signals are being utilized, there is no problem of impedance
matching or other problems resulting from the use of high frequencies.
Furthermore, since the light is confined to the optical fiber or guide,
there will be no cross talk across channels. Also, the problem of heat
generation is substantially minimized by the use of optical transmissions.
Referring now to FIG. 4, there is shown a further embodiment of the
invention. In FIG. 4, there is shown a silicon circuit board 21 having
mesas 23 formed in selected regions on the surface thereof which line up
with alignment holes 25 formed on the surface of a gallium arsenide chip
27 of the type known in the art as a "flipchip". The mesas 23 are formed
by standard well known orientation dependent etchants (ODE) to provide the
desired mesa shape. The chip 27 includes a laser diode 29 which is lined
up with an optical link 31 on the surface of the board 21 due to the
selective formation of the mesas 23 to provide the alinement. The optical
link 31 can be an optical fiber placed in a groove formed in the board 21
or on the surface of the board 21 or can be an SiO.sub.2 path formed in
the board in the manner described hereinabove and in the above noted
publications. Also shown is a further chip 33 positioned over mesas 35
which are the same as mesas 23 having a phototransistor 37 lined up with
the optical link 31. Information at optical frequencies is transmitted
from laser 29 to phototransistor 37 via optical link 31. In the above
described embodiment, the ODE mesas 23 are coupled to pads on the chips 27
and 33 to provide a voltage source, ground connection and as a signal
input and output as well as for alignment as noted above.
Boards of the type shown in FIGS. 1 to 4 can be stacked as shown in FIG. 5.
Communication among the stacked boards can be by electrical connection in
standard manner and/or by running optical links from board to board. As
shown in FIG. 5, four boards 51 are stacked, one atop the other. Gallium
arsenide chips 53 are positioned on the boards and interconnected on each
board 51 by optical links 55. Optical fibers (not shown) travel between
optical links 55 from any board 51 to and optical link on a further board
51 to provide optical communication between boards.
Briefly, to recapitulate, it is posible in accordance with the present
invention to provide chip to chip communication on a single circuit board
wherein the board itself is preferably a silicon substrate, wherein the
optical fibers are formed in the board itself by standard integrated
circuit processing techniques and wherein Group III-V semiconductor
devices are utilized for transmitting and receiving the optical signals
transmitted via the circuit board itself.
Though the invention has been described with respect to a specific
preferred embodiment thereof, many variations and modifications will
immediately become apparent to those skilled in the art. It is therefore
the intention that the appended claims be interpreted as broadly as
possible in view of the prior art to include all such variations and
modifications.
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Description  |
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