A switching device comprises a pair of electrodes, an organic insulating layer and an inorganic oxide layer which are held between the electrodes. The organic insulating layer is comprised of an organic compound having at least one .pi.-electron level and the inorganic oxide layer is comprised of a metal oxide. Another switching device comprises a pair of electrodes, an organic insulating thin film provided between the electrodes and said organic insulating thin film in such a manner than an electrification region between the electrodes may be restricted.
The present invention provides a recording medium comprising a recording layer on an electrode substrate and one or a plural number of fine lone electrode made of an electroconductive material provided on said recording layer.
An MIM type electric element has an upper electrode, a lower electrode, and a barrier layer held therebetween and composed of an insulator or a semiconductor. The lower electrode contains a noble metal crystal having a facet of a plate-shaped crystal formed on a substrate. The facet has a plane given by the crystal face (111) and contains a region having a plane orientation variance angle of not more than 1.degree. by X-ray diffraction.
The present invention provides a recording medium comprising a recording layer on an electrode substrate and one or a plural number of fine lone electrode made of an electroconductive material provided on said recording layer.
According to this invention, there is provided a memory element and a matrix memory cell array including memory cells each having a nonlinear conductivity bipolar switching element constituted by a multi-layered structure which performs writing/reading operations of a polarization state of a ferroelectric body, i.e., a recording medium of the memory cell, as data and which is constituted by an insulating layer of a predetermined-thickness Langmuir-Blodgett film using most of a switching drive current as a direct tunnel current and conductive layers formed on both the surfaces of the insulating layer.
A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. The structure comprises a suitable substrate disposed with he following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure. Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages. Judicious combinations of the choice of this insulator material and the means to integrate it into the TFT structure are taught that would enable easy fabrication on glass or plastic substrates and the use of such devices in flat panel display applications.
