An improved electric power conversion system comprising a multi-phase bridge circuit composed of semiconductors such as thyristors and an associated firing circuit. It is so constructed that: if the AC input current Iac flowing in the bridge circuit is equal to or larger in value that the DC output current Idc flowing out of the bridge circuit, it will be decided than an inner defect or fault is caused, and possible expansion of inner defect will be prevented by disabling the firing circuit to extinguish the thyristors in the bridge circuit, and if the AC input current Iac is smaller than the DC output current Idc in value, the bridge is permitted to continue the operation of power conversion, thus eliminating unnecessary interruption which otherwise would be caused by exterior disturbances. Also, an improved electric power conversion system may be equipped with a device to prevent an adverse effect from being caused by abnormal rise of thyristors' temperature.
An improved temperature control system for a power conversion circuit having two or more power converters operating in parallel and providing output power to a single load. The temperature control system maintains the temperature of each of these power converters at approximately the average temperature of the power converters. A detector coupled to each power converter detects the temperature of the power converter and generates a measurement signal that is a function thereof. A reference signal is generated that is a function of each measurement signal. A control circuit responsive to the measurement signal of each power converter adjusts the output power of that respective converter as a function of the difference between that converter's measurement signal and the reference signal such that the temperature of each power converter approximates the average of temperature of the power converters.
A semiconductor power conversion system comprising a multiphase bridge circuit which includes semiconductor devices having a controllable firing function and a reverse blocking characteristic, a gate control circuit which gives firing commands to the semiconductor devices, a short circuiting switch in which switching devices having a controllable firing function and a reverse blocking characteristic are connected in parallel with a DC output side of the multiphase bridge circuit, and a protection control device for performing a control for protecting the multiphase bridge circuit. The protection control device includes a device for detecting a commutation failure of the multiphase bridge circuit, and a device in response to the detection of the commutation failure for producing a blocking command for blocking the firing of the semiconductor devices of the multiphase bridge circuit and producing a short-circuiting command for firing the switching device which is short-circuited which bypasses current of the commutation failure. The protection control device further includes a device for detecting ending of a short-circuit based on the ceasing of current conduction of the short circuiting switch and for halting the blocking of the firing of the semiconductor devices of the multiphase bridge circuit.
A system is disclosed including an AC sensor for providing an AC sensor signal based upon AC on AC lines, a DC sensor for providing a DC sensor signal based upon DC, and a fault detector for providing a fault indicating signal based upon a difference between the AC sensor signal and the DC sensor signal.
Current correction control is carried out by control process of a control circuit 13 that temperatures of the electromagnetic relays 18a and 18b are assessed one by one based on the detection temperature by the temperature sensor 18c, when the temperature assessed value rises over the predetermined value, the upper limit of the target current value of the motor 11 is decreased.
In a method for control of an installation for transmission of high-voltage direct current in dependence on at least one stress parameter for a valve in a converter included in the installation and controlled by control equipment (CE1, CE2), a value (PDR, PDI, UMAX, TRC, TTC) of the stress parameter is continuously calculated, based on predetermined relationships (f1, f2, g1R, g2R, g1I, g2I, h1, h2) and in dependence on measured values (UN, .alpha., .gamma., ID, TO, TI, RECT/INV) of the operating parameters of the installation. At least one influencing signal (HTH, HCC, HCR) is generated in dependence on a comparison between the calculated value and at least one comparison value for the parameter, and the influencing signal is supplied to the control equipment to influence this in a direction which limits the value of the stress parameter. The member (HAS) comprises a monitoring device (PD, UA, TR, TT) for calculating the value of the stress parameter.
