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Claims  |
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I claim:
1. A method of manufacturing a repairable electronic multi-chip module
comprising,
mechanically securing a plurality of integrated circuit chips to a
plurality of substrates by heat treatment of a first bonding material
having a first melting temperature, and
after securing said chips to said substrates, electrically and mechanically
coupling said plurality of chips to a chip package, said mechanical
coupling including attaching said substrates to said chip package by
application of a second bonding material, said application of said second
bonding material being at a maximum temperature below said first melting
temperature, thereby allowing attachment of said substrates to said chip
package without melting of said first bonding material.
2. The method of claim 1 wherein said application of said second bonding
material is a step of initiating melting of said second bonding material
having a second melting temperature less than said first melting
temperature.
3. The method of claim 1 further comprising the step of electrically
testing said chips fixed to said substrates after said electrical coupling
of said chips to said chip package but prior to said attaching of said
substrates to said chip package.
4. The method of claim 1 wherein said step of securing said chips to said
substrates includes application of an electrically conductive first
bonding material therebetween.
5. The method of claim 1 wherein said step of securing said chips to said
substrates includes providing said substrates made of an iron-nickel
alloy.
6. The method of claim 5 wherein said iron-nickel alloy is nickel-gold
plated.
7. The method of claim 1 wherein said step of attaching said substrates to
said chip package includes application of a solder preform.
8. The method of claim 1 further comprising electrically linking said chips
to said chip package by attachment of a tape automated bonding frame.
9. A method of manufacturing a repairable multi-chip module comprising,
securing a plurality of integrated circuit chips to a plurality of
substrates by heating a first bonding material above the melting
temperature of said first bonding material, each chip being electrically
connected to a tape automated bonding frame,
providing a second bonding material between said substrates and a
multi-chip module for mechanically attaching said substrates to said
module, said providing said second bonding material being a providing of a
material having a melting temperature below the melting temperature of
said first bonding material,
electrically coupling said plurality of chips to said module, said
electrical coupling including connecting leads of said tape automated
bonding frame to contacts on said module, and
mechanically coupling said substrates to said module, said mechanical
coupling including heating said second bonding material above the melting
temperature of said second bonding material but below the melting
temperature of said first bonding material.
10. The method of claim 9 further comprising hermetically sealing said
module using a sealing material having a melting temperature below that of
said first bonding material.
11. The method of claim 9 further comprising the step of electrically
testing said chip after said electrical coupling to said module and before
said mechanical coupling.
12. The method of claim 9 wherein said chips are secured to said substrates
by silver glass.
13. The method of claim 9 wherein said step of providing said chips is a
step of providing memory chips.
14. The method of claim 11 wherein said substrates are made of an
iron-nickel alloy.
15. A method of repairing a multi-chip module comprising,
fixing a plurality of integrated circuit chips to a plurality of substrates
by heat treating a first bonding material having a first melting
temperature,
electrically attaching said plurality of substrates to a multi-chip module,
removing a defective chip of said plurality of chips from said module by
electrically detaching said defective chip,
inserting a replacement chip attached to a replacement substrate in a
position previously maintained by said defective chip,
electrically attaching said replacement chip to said module, and
heating a second bonding material to a temperature less than said first
melting temperature to secure said replacement substrate and said
plurality of substrates to said module.
16. The method of claim 15 further comprising testing said plurality of
chips prior to said heating of said second bonding material.
17. The method of claim 16 wherein said electrical attaching includes an
attachment of a tape automated bonding frame between each chip and said
module.
18. The method of claim 15 further comprising the step of hermetically
sealing said module using a material having a melting temperature less
than the melting temperature of said first bonding material. |
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Claims  |
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Description  |
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TECHNICAL FIELD
The present invention relates generally to packaging of integrated circuit
chips and particularly to repair of multi-chip modules.
BACKGROUND ART
In electronics, packaging of a number of integrated circuit chips in a
single module is increasingly common in order to achieve minimization of
the length of interconnection between components. Minimization of the
length of interconnections improves the speed and performance of the
circuitry. The main disadvantage of multi-chip modules, however, involves
the cost of manufacturing such modules. Among the reasons for the high
cost of multi-chip modules is the relatively low manufacturing yield of
the modules. As the number of integrated circuit chips within a package
increases, the likelihood of a defect within the package also increases.
Detection of a defective chip within a module may result in the entire
module having to be discarded.
Preferably, the individual integrated circuit chips are tested prior to
interconnection within the multi-chip module. However, it is not uncommon
for an operative chip to be rendered inoperative during the packaging of
the chip. For example, a mismatch between the expansion coefficient of two
materials used in joining the module to the chip will induce stresses in
the bulk of the chip and its surface passivation, as well as the
interconnection to the chip. Stress and strain will cause voids and lead
to defective chips. Inoperative chips may also be a result of damage to an
electrostatic discharge or damage during bonding wire connection.
Replacement of a defective component within a multi-chip module requires
removal of both the electrical connection and the mechanical coupling of
the component to a package. U.S. Pat. No. 4,901,136 to Neugebauer et al.
teaches a multi-chip interconnection package. Electrical disconnection of
a single chip may require the desoldering of hundreds of leads. Thus, it
is often more cost-efficient to discard the entire package. U.S. Pat. No.
4,806,503 to Yoshida et al. teaches a method of replacing integrated
circuit chips interconnected within a multi-chip module by tape automated
bonding frames. In tape automated bonding, chips are attached to copper
leads supported by a tape similar to 35-mm film. In manufacture of the
frame the film is coated with copper, whereafter the leads are formed by
lithography and etching techniques. The inner lead ends of the frame are
connected to input/output pads of a chip. The outer lead ends are then
microbonded to contacts on a substrate, such as a multi-chip module. The
replacement method of Yoshida et al. is to cut the conductive traces of
the tape automated bonding frame at the centers of the leads. That is, the
outer lead bonds are left intact. A replacement part having a frame with
leads sufficiently long to overlap the leads left from the first-installed
frame is then precisely aligned to allow bonding of the replacement frame
to the original leads.
Mechanical decoupling of the defective chip from the package is equally
difficult. One method used for the original mechanical attachment of the
chips is referred to as eutectic die bonding. This method metal-lurgically
attaches the chip to the module. For example, a gold-silicon eutectic
composition may be used. A drawback of this method is that the die bond
site might not be suitable for replacement die attachment and the heat
required to remove an original inoperative die may cause damage to
packaged dies and components.
Polymer adhesive and silver glass die bonding are also utilized. The
characteristics of materials such as silver glass provide a more void-free
bonding method than metal counterparts. U.S. Pat. No. 4,872,047 to Fister
et al. teaches a semiconductor die attach system using silver-glass
adhesive. One drawback in the use of silver glass, however, is that the
material is a thermosetting material which requires a high temperature and
a long firing time. Fister et al. teaches use of a solder to dissipate the
thermal stresses caused by strains generated during thermal cycling of a
die and a substrate, thereby decreasing the susceptibility of the die to
damage during attachment. A buffer formed of a thin strip of material
capable of withstanding thermal stresses is provided between the chip and
the substrate. Firstly, the solder is melted to bond the buffer to the
substrate. Fister et al. teaches that the solder is relatively soft and
deforms at a relatively low stress to accommodate the stress and strain
generated by the mismatch in coefficients of expansion of the buffer and
the substrate. Silver-glass adhesive is then deposited on the surface of
the buffer and a chip is stacked on the adhesive. The adhesive is then
melted and cooled to form the desired bond. Use of the Fister et al.
method of attachment increases production yield, but cannot guarantee a
yield of 100%. Thus, mechanical decoupling of a defective chip from a
package is still a problem.
Mechanical decoupling of a defective chip from a multi-chip module requires
melting of the bonding material. Because the silver glass requires a high
and an extended melt time, it is difficult to localize heating for removal
of the defective chip without affecting bonding of the other chips.
Consequently, a previously good chip may be damaged as a neighboring
defective chip is removed. Moreover, often there are governmental or
industrial standards which are affected by an inability to localize the
melting. This is particularly true in multi-chip modules manufactured for
military applications. Thus, typically the entire module is discarded.
It is an object of the present invention to provide a method of
manufacturing a multi-chip module which allows prepackaging testing of
individual chips and wherein the resulting module can be easily reworked.
SUMMARY OF THE INVENTION
The above object has been met by a manufacturing method which allows three
levels of testing and which facilitates both electrical and mechanical
decoupling of a defective chip from a multi-chip module. Thus, a higher
yield results and the overall cost of a multi-chip module is reduced.
A plurality of integrated circuit chips are individually secured to
substrates by heating a first bonding material above the melting
temperature of the material. The first bonding material has a high melt
point. Silver glass is one possible material. Typically, if a chip which
is operable after fabrication is later rendered defective, the defect is a
result of the thermal cycling during the chip attachment to a substrate.
The stresses and strains experienced during thermal cycling cause chip
cracking. The present invention allows a first level of testing of
individual chips prior to mounting within a multi-chip module.
The method of manufacture further includes electrically attaching a
plurality of tape automated bonding frames to a corresponding number of
the integrated circuit chips which have been secured to the substrates.
Normally, testing of an individual chip prior to interconnection within a
multi-chip module is not cost-efficient. However, tape automated bonding
provides a spider-like metal pattern of conductive leads which is easily
connected to a test apparatus. The tape automated bonding frame allows a
second level of testing that is more easily accomplished than the first.
The tape automated bonded chips which have been individually secured to
substrates are then electrically and mechanically coupled to a multi-chip
module. Preform material having a melting temperature less than the first
bonding material is employed for mechanical coupling of the substrates to
a module package. The tape automated bonded chips are excised from the
bonding frames and positioned atop the preform material. The excised leads
are then aligned to a package bond post. However, the preform material is
not melted at this time. The electrical coupling includes connecting the
leads of the tape automated bonding frame to contacts on the module.
Optionally, a relatively rigid ribbon may be attached from the substrate
to the module in order to both mechanically attach the substrate and
ground the chip via the silver glass and the substrate.
Electrical attachment of a number of the tape automated bonded chips to the
multi-chip module allows a third level of testing. At this third level the
chips may be required to electrically interact and cooperate with each
other in the same manner as will be required in subsequent application. If
an individual chip is tested to be below an acceptable standard, removal
of the chip is more easily accomplished than in the past. Because the
preform material between the chips and the module package has not yet been
melted to bond the chips to the package, chip removal consists of merely
removing leads that are bonded to the package. Other repairs to the
multi-chip module are also possible.
After testing of the module and after all necessary repairs are performed,
the module may be hermetically sealed by attachment of a lid. Preferably
lid attachment is by means of a preform material identical to that located
between the chips and the module. A single melting step is then used to
provide lid-to-module hermetical sealing and chip-to-module mechanical
attachment.
An advantage of the present invention is that the method allows a number of
levels of testing. In comparison to the Fister et al. method of reducing
the likelihood that a chip will be damaged during the thermal cycling of
silver glass, the present invention addresses the desirability of
detecting chips which have been rendered defective by such thermal
cycling. A chip may be tested at the wafer level, after attachment to a
substrate, after attachment to a tape automated bonding frame, and after
final assembly to a module.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a top view of a multi-chip module manufactured in accord with the
present invention.
FIG. 2 is a side view of a semiconductor chip of FIG. 1 mounted to a
substrate.
FIG. 3 is the assembly of FIG. 2 having a tape automated bonding frame
attached thereto.
FIG. 4 is a side view of the assembly of FIG. 3 with leads bonded to a
multi-chip package, but with the substrate not secured to the package.
FIG. 5 is a side view of the assembly of FIG. 4 having a lid for
hermetically sealing of the package and having the substrate secured to
the package.
BEST MODE FOR CARRYING OUT THE INVENTION
With reference to FIG. 1, a multi-chip module 10 is shown as including four
semiconductor chips 12, 14, 16 and 18. Each chip is attached to inner
leads 20 of a tape automated bonding frame. Tape automated bonding is a
fabrication procedure using insulated tape which is similar to
photographic film to provide a planar substrate for a spider-like metal
pattern of leads. Here, the leads 22 of the tape automated bonding frames
"fan two sides of the chips 12-18, but typically the out" from two sides
of the chips 12-18, but typically the leads extend from each of the four
sides of the chip.
The outer leads 22 of the tape automated bonding frames attach to
connection sites of the multi-chip module. The connection sites are
interconnected in a manner that allows interaction among the chips. The
interconnection within the multi-chip module is not shown. Moreover, the
chips 12-18 must communicate with outside circuitry. On a side opposite to
that shown in FIG. 1, the multi-chip module may include leads for surface
mounting the module to a substrate such as a printed circuit board.
In addition to the inputting and outputting of signals to the chips 12-18
via the leads 22 of the tape automated bonding frame, each chip must be
supplied with power and ground potentials. The leads 22 may be employed to
supply such utilities, but the frames in FIG. 1 each includes four utility
pads 24, 26, 28 and 30. The utility pads provide a ground potential and
optionally provide power as well.
FIGS. 2-5 illustrate the method of manufacturing the multi-chip module 10
shown in FIG. 1. The first step is to attach the chips 12-18 to separate
substrates 32, 34, 36 and 38. For example, the package 40 may be made of a
ceramic material and the substrates 32-38 may be made of an iron-nickel
alloy sold under the trademark Kovar. The Kovar substrates are preferably
nickel/gold plated to facilitate soldering. As will be described more
fully below, attachment of the chips 12-18 to individual substrates
facilitates later removal of an individual chip if the chip is found to be
defective.
As shown in FIG. 2, the chip 12 is bonded to the substrate 32 by a bonding
material 42. For proper operation of some chips, the chips must be at
ground potential. One method of establishing ground at the chip is to
utilize ground ribbons 44 and 46. The ground ribbons are semi-rigid to
provide mechanical strength during later attachment to the package. The
ribbons 44 and 46 ground the substrate 32. Silver glass is typically used
for the bonding material 42 to provide a low-resistance electrical
connection between the chip 12 and the substrate 32. Gold-silicon eutectic
bonding is also possible. Use of silver glass results in fewer damaged
chips since the characteristics of the material render the chips less
susceptible to cracking under the stresses and strains experienced during
chip attachment. This is particularly true for large chips. Chip
attachment requires a relatively high temperature. Typically, the silver
glass is raised to a temperature of approximately 400.degree. C. Moreover,
the material must be fired for an extended period of time. Maintaining the
high temperature for a period exceeding ten minutes is common.
The interconnection scheme referred to as tape automated bonding
facilitates testing of the chips. As shown in FIG. 3, the inner leads 20
of the tape automated bonding frame are electrically connected to
input/output pads 48 on the chip 12. A tape automated bonded component may
be exercised electrically and subjected to a burn-in process prior to
attachment to a package. The leads 22 of the tape automated bonding frame
may be manufactured to extend beyond the attachment length, so that the
outer ends may be employed as test connection sites without concern of
damaging the connection sites for later attachment to a package. A
properly functioning chip may then have its outer leads excised, as shown
in FIG. 4. The step of electrically and mechanically coupling the chip 12
to the package 40 is illustrated in FIG. 4. The electrical attachment
includes bonding of the leads 22 to connection sites on the package. The
connection sites provide electrical communication between the various
chips in the package and allow communication between the package and
outside circuitry. The electrical and mechanical coupling includes
attachments of the ground ribbons 44 and 46 to posts located on the
package. Because the ground ribbons are semi-rigid, the ribbons add
stability to placement of the device.
A second bonding material 50 is positioned between the substrate 32 and the
package 40. It is critical that the second bonding material 50 has a
melting point below that of the first bonding material 42. In this manner
the second bonding material may be fired without disturbing the connection
of the chip 12 to the substrate 32. However, second bonding material is
not fired until after testing of the multi-chip package has been
performed.
A gold-tin preform is preferred as the second bonding material 50. This is
in comparison to the common prior art practice of attaching the chip 12
directly to the package 40 using a eutectic die bonding technique or a
silver glass or polymer adhesive die bonding technique. The second bonding
material should be the material that is used to hermetically seal a lid to
the package.
After electrical attachment of each tape automated bonded chip 12 to the
package 40, the assembled package is tested. Any chip which is determined
to be unacceptable is replaced merely by removing the leads 22 from the
package and bonding a new chip in place. Because the second bonding
material 50 has not bee fired, localized heating at the interface of the
substrate 32 and the package 40 is not required. The cycle of testing and
chip failure replacement is repeated until the final assembly is tested as
being above standard requirements.
Referring now to FIG. 5, a lid 52 may then be secured to the package 40 to
hermetically seal the chips 12 within the multi-chip module 10. Again, a
gold-tin preform is used to provide the attachment. The lid attachment
preform and the second bonding material 50 are fired simultaneously to
secure the lid 52 and the substrates 32 to the package 40.
The multi-chip module 10 shown in FIG. 1 includes four chips 12-18. The
number of chips within a module, however, is not critical. The chips may
be one megabyte memory devices. Thus, to increase the module's capability
to eight megabytes, the module need only be expanded to receive four
additional devices.
Because not all chips need to be grounded to a multi-chip module, utilizing
silver glass and ground ribbons is not critical to the present invention.
For chips which do not require such grounding, the silver glass may be
replaced by glass bonding and the ground ribbons may be eliminated.
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Description  |
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