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Phonon suppression in quantum wells
   
Document Number
US Patent 5160982
Issued Date
November 3, 1992
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Abstract
An enhanced mobility semiconductor comprising a host quantum well having at least two charge carrier barrier layers of a wide bandgap material, each of the two charge carrier barrier layers being separated by a conducting region containing charge carriers is provided. A number of phonon barriers having a predetermined thickness are formed in the conducting region wherein the predetermined thickness is chosen to allow charge carrier tunneling through the phonon barriers.
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Phonon suppression in quantum wells - US Patent 5160982 Drawing
Drawing from US Patent 5160982
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Number of Claims:
12
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Owner
Motorola, Inc. (Schaumburg, IL)
Published
November 3, 1992
Application Number
07/895,228
Filed
June 8, 1992
US Classification
257/23   257/192 257/196 257/E29.069
Int'l Classification
H01L   29/12   (20060101)   H01L   29/02   (20060101)  
Examiner
Assistant Examiner
Attorney/Law Firm
Parent Case
This application is a continuation of prior application Ser. No. 07/724,014, filed Jul. 1, 1991, now abandoned.
USPTO Field of Search
357/4   357/16   357/17  
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Description
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