Disclosed is an inventive diode which can reduce a stray capacity to improve various characteristics thereof, in which a dielectric layer, a conductive layer and a second dielectric layer are respectively formed by deposition in this order on an upper face of a semiconductor substrate excluding a central portion of an exposed surface of a P-type region. Then, an anode side electrode is formed extending from the exposed surface of the P-type region to the upper face of the second dielectric layer, and is electrically connected with the P-type region. Herein, the conductive layer is formed such that it is isolated from the electrode by the second dielectric layer, is connected with the semiconductor substrate upper face in a location where the dielectric layer has not been formed, and partially resides in a location sandwiched between the electrode and the semiconductor substrate. Such configuration could prevent a depletion layer from being generated in the vicinity of a surface of a higher resistivity region lying under the conductive region. Further, according to such configuration, a stray capacity between the electrode and the semiconductor substrate could be made lower than the capacity value generated between the electrode and the conductive layer.

A freewheeling diode device (10) for a commutation branch includes a first diode (12) with a soft recovery behavior and a second diode (14) with a snappy recovery behavior. The second diode (14) is connected in parallel to the first diode (12).

A diode device for face down bonding use comprising: a semiconductor main body; a first region for forming an electrode, the region being exposed at a first surface of the semiconductor main body; a first electrode provided in the first region; a second region for forming another electrode, the second region being provided within the semiconductor main body; a third region conducting the second region to the first surface through the semiconductor main body; and a second electrode provided in the third region on the first surface.

A face down bonding PIN diode having a semiconductor main body; a first region of a conductivity type, a surface of the first region being exposed at a first surface of a semiconductor main body; a third region of a conductivity type opposite that of the first region, the third region being positioned under the first region; a fifth region of substantially intrinsic semiconductor, the fifth region being positioned between the first region and the third region; a fourth region of the same conductivity type, the fourth region being extended vertically from the first surface to the third surface; a first electrode provided on a predetermined surface of the semiconductor main body connected to the first region; and a second electrode provided on the predetermined surface of the semiconductor main body, the second electrode being connected to the fourth region and connected to the third region through the fourth region.

Disclosed is a diode device in which two electrodes of regions forming both terminals are provided on the same face, thereby enabling the device to be connected to a circuit substrate by face-down bonding. Since a region is located within the semiconductor base, an electrode cannot be connected at the top face thereof; to overcome this, a groove is provided extending in a perpendicular direction from the top face of the semiconductor base to the region, and an electrode is provided in the groove. Then, the electrode in the groove is exposed at the top face, enabling the electrodes of both regions to be connected at the top face.