The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group. One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above. Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent. Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrobenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays. Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps.
This is a division of application Ser. No. 07/304,231, filed on Jan. 31, 1989, U.S. Pat. No. 5,017,453 which is a continuation of Ser. No. 06/938,874, filed on Dec. 8, 1986, U.S. Pat. No. 4,822,716.
Priority Data
Dec 27, 1985 [JP] 60-293182 Mar 31, 1986 [JP] 61-71107 May 21, 1986 [JP] 61-114673 Jun 04, 1986 [JP] 61-128081
Polycyclic aromatic group-pendant polysilanes of the following general formula are described. wherein R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are, respectively, a hydrogen atom or a monovalent hydrocarbon group provided that at least one of R.sup.3 and R.sup.4 is a monovalent hydrocarbon group having a polycyclic aromatic group or a biphenyl group. When the polysilane is doped with an oxidative dopant, the polymer is rendered electrically conductive and has thus wide utility in various fields of photoconductive and electrically conductive materials without involving degradation of the polysilane.
A resin composition comprising (a) an epoxy compound, (b) a curing agent comprising a polysiloxane resin having a phenolic hydroxyl group on its side chain, and (c) an inorganic filler. The mixing ratio of the inorganic filler should preferably be 10 to 95% by weight based on the entire resin composition.
A one-part type radiation curable silicone composition capable of curing at an ordinary temperature is provided. The silicone composition comprises an unsaturated group-containing polyorganosiloxane and a polysilane in which at least one at least two silicon atoms are bonded to each other and which has at least one polyorganosiloxane group in a side chain thereof.
A method of forming integrated circuit structures, such as capacitors and conductive plugs, within contact openings formed in a photosensitive silicone ladder polymer (PVSQ) is disclosed. Contact openings with reduced striations and CD loss are formed in a photosensitive silicone ladder polymer (PVSQ) layer by patterning the PVSQ film employing a photomask with a predefined pattern, exposing the PVSQ film to i-line, developing the exposed PVSQ film in a mixture of anisole/xylene in a ratio of about 1:2 for about 30 seconds, and subsequently optionally annealing the undeveloped PVSQ film at a temperature of about 300.degree. C. to about 600.degree. C.
A method of forming a pattern comprising the steps of forming a film of an organosilane compound comprising a polysilane having a repeating unit represented by the following general formula (1) on a substrate, irradiating an actinic radiation onto a predetermined portion of the film of the organosilane compound formed on the substrate, and removing the predetermined portion of the film irradiated by the actinic radiation by dissolving it with an aqueous alkaline developing solution. ##STR1## wherein Ar is a substituted or non-substituted aryl group.
