A semiconductor memory module comprising an atomic resolution storage memory, a magnetic memory, and a memory controller. The memory controller is configured to move data between the memory controller and the atomic resolution storage memory and configured to move data between the memory controller and the magnetic memory.

A molecular memory medium for storing digital bits at a density of several hundred million per square centimeter. The medium is read and written by a tunnelling probe, and comprises a plane surface and a means for moving the surface relative to the tunnelling probe. Arrayed on the surface are plural memory elements, each storing one bit, and having, relative to the surface, a first positional state and a second positional state, representing the first state and the second state, respectively, of the bit. The positional states are distinguished from one another by a difference in a tunnelling current in the tunnelling probe. The memory element is switched from one positional state to the other by an electrostatic force applied by the tunnelling probe. A molecular memory apparatus for reading such a molecular memory medium includes a tunnelling probe, a drive for moving the storage medium relative to the tunnelling probe, and a controller for positioning the tunnelling probe relative to the track and the surface. A voltage applying circuit applies a voltage to the tunnelling probe, and a circuit causes the voltage applying circuit to apply a first voltage to the tunnelling probe and measures the resulting tunnelling current that depends on the positional state of the memory element adjacent to the tunnelling probe. Finally, a circuit determines from the tunnelling current the digital state represented by the memory element adjacent to the tunnelling probe, and provides the determined digital state as an output bit.

Memory devices in accordance with the present invention can comprise a molecular memory integrated circuit including a set of actuators capable of moving one or more platforms. In one embodiment the platforms can include either a memory device or a Molecular Array Read/Write Engine (MARE) with a cantilever system having at least one cantilever tip. When a first platform with a memory device is brought within close proximity of a second platform with a MARE, the actuators can position the cantilever tip to a specific location on the memory device. The tip of the cantilever can perform a number of functions to the memory device, including reading the state of the memory device or changing the state of the memory device. This description is not intended to be a complete description of, or limit the scope of, the invention.

A media device includes a phase change media having altered resistivity where data is written to the media. The media includes an overcoat to reduce physical damage inflicted on the media from a device such as a cantilever tip in a molecular memory integrated circuit used to write to or read from the media. Data written to the media can be exist in multiple states, allowing digital and/or analog data to be stored on the media.

A data storage device comprises a media including a memory layer within which are formable domains associated with information, and a conductive layer disposed over the memory layer, the conductive layer having anisotropically increased electrical conductivity in a thickness direction. A conductive tip contactable with the conductive layer is adapted to form domains within the memory layer and one of the conductive tip and the media is movable to access the memory layer.