A mat structure and method of matting is disclosed, wherein a front mat is formed having a first opening. A second mat is formed having an opening smaller than the first opening in the front mat. A well mat is formed having an opening corresponding to the outer dimensions of the second mat and corresponding to the dimensions of a picture to be matted. A backing member is also provided. In a first configuration, the well mat is secured to the backing member. In a second configuration, the well mat is secured to the back of the front mat. In either configuration, a picture is positioned within the opening in the well mat so that, when the second mat is positioned in the well over the picture, the picture is secured in place by the second mat either opposing the backing member (in the first configuration) or opposing the back of the front mat (in the second configuration). The resulting structure comprising the front mat, second mat, well mat, picture, and backing member may then be framed.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a continuation-in-part (CIP) of my copending application Ser. No. 459,053, entitled "Mat Structure and Method of Matting a Picture," now Pat. No. 5,074,067.
Body portions (36) of semiconductor crystalline silicon material of sufficient quality to form high-mobility TFTs (thin-film transistors) and other semiconductor devices of a driver circuit are formed by depositing on a substrate (14) a layer of insulating silicon-based non-stoichiometric compound material (32) and then converting this material (32) into the semiconductive crystalline material (36) by heating with an energy beam (40), for example from an excimer laser. The use of an energy beam (40) permits easy localization of the heating (and consequent conversion) both vertically and laterally. The deposition (e.g. by plasma-enhanced chemical vapour deposition) and the beam annealing can both be carried out without heating the substrate (14) to high temperatures, and so a glass or other low-cost substrate (14) can be used. An unconverted part (32a) underlying the crystalline silicon body portion (36) can form at least part of a gate insulator of the TFT. The deposited non-stoichiometric compound material may be of a type suitable for forming a MIM-type switching device so that unconverted areas (42) of the insulating material ( 32) may be retained for that purpose. This permits the fabrication of an LCD device comprising a picture-element array of MIM type devices in the unconverted material (32) of the layer and TFT driver circuitry in the crystalline silicon material (36) of the layer.
A holder for an air freshener comprising a wall section having a perimeter, a forward facing rim disposed along the perimeter, a rearward facing rim disposed along the perimeter forming a rear space for containing the air freshener. An image may be disposed on the forward facing surface of the wall section.
The present invention is directed to a scented picture frame having removable scent boards attached in spaced relation to provide an aromatic ambiance with the display of an item such as a picture. The present invention features a holder on the back of the frame, capable of holding one or more scent boards in parallel adjacent the back of the frame, whereby an aroma is dissipated from a scented oil on the scent board to enhance the experience of viewing the item. Scents are impregnated into the scent board and retained by individually wrapping the scent boards for future use. One or more scents may be used with the present invention by hanging multiple scent boards on the scented picture frame. The scent boards may be removed and replaced when the scent is dissipated or to change the aroma. A picture pouch is used to protect the item in the scented picture frame from absorbing an aroma of the scent board.
