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X-band bipolar junction transistor amplifier
   
Document Number
US Patent 5339047
Issued Date
August 16, 1994
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Abstract
An X-band (8-12.5 GHz) amplifier comprises a bipolar junction transistor (BJT) arranged for receiving an X-band signal, amplifying the signal and providing the amplified signal to further circuitry. Input and output matching networks are advantageously provided for the BJT. Each network may have a first end for connection to a BJT and a second end for connection to a terminal, and may comprise a series connection of a first inductor, a first capacitor and a second inductor extending from the first end to the second end in that order; a third inductor connected between ground and the connection point of the first capacitor and the second inductor; and a second capacitor connected between ground and the second end. The various reactance components may be implemented on a dielectric board, for example by microstriplines and/or shaped cladding portions. An X-band oscillator may comprise the X-band amplifier described above, and a feedback circuit interconnecting an output and an input of the amplifier. The feedback circuit may comprise first and second feedback means, for example microstriplines, which may be coupled to a dielectric resonator.
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X-band bipolar junction transistor amplifier - US Patent 5339047 Drawing
Drawing from US Patent 5339047
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Number of Claims:
10
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Published
August 16, 1994
Application Number
08/018,969
Filed
February 18, 1993
US Classification
330/286   330/306 333/33
Int'l Classification
H03F   3/60   (20060101)  
Assistant Examiner
USPTO Field of Search
330/306   330/286   333/33  
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