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Claims  |
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We claim:
1. A semiconductor device with a semiconductor chip connected to a wiring
substrate in flip-chip fashion, comprising:
a plurality of electrode members arranged two-dimensionally for connecting
said semiconductor chip and said wiring substrate; and
an optical waveguide formed in a space between said electrode members.
2. A semiconductor device according to claim 1, wherein said semiconductor
chip and said wiring substrate are connected in flip-chip fashion by said
electrode members disposed in at least a through-hole perpendicular to the
principal surface of said optical waveguide.
3. A semiconductor device according to claim 2, wherein said semiconductor
chip has a signal wiring connected to said optical waveguide and said
wiring substrate, and a power wiring connected to said wiring substrate.
4. A semiconductor device according to claim 1, wherein a clock signal is
distributed by an optical waveguide to a semiconductor chip having a
photodetector and a clock receiving circuit.
5. A semiconductor device according to claim 1, wherein a semiconductor
chip having a photodetector and a receiving circuit is connected by an
optical waveguide as a bus.
6. A semiconductor device according to claim 1, wherein each of said
electrode members is made of a metal bump.
7. A semiconductor device according to claim 1, wherein
said wiring substrate comprises optical interconnecting means for receiving
an optical clock signal and leading said optical clock signal to said
optical waveguide, and a wiring for receiving an electrical reference
signal frequency-divided from said clock signal and applying said
electrical reference signal to one of said electrode members,
said semiconductor chip includes electrical interconnecting means for
transmitting the frequency-divided electrical signal to a predetermined
destination, and phase adjusting means for adjusting a selected one of the
lead and lag of the clock signal outputted from said optical
interconnecting means on the basis of the reference signal transmitted by
said electrical interconnecting means, thus putting the clock signal in
phase, and outputting a phase-adjusted clock signal having a predetermined
frequency to following destinations.
8. A semiconductor device according to claim 7, wherein said optical
interconnecting means includes optical transmitting means for converting
an electrical clock signal produced from a clock oscillator into said
optical clock signal, optical receiving means for converting the optical
clock signal into an electrical clock signal, and said optical waveguide
for supplying said optical clock signal from said optical transmitting
means to said optical receiving means.
9. A semiconductor device according to claim 7, wherein said reference
signal generating means frequency-divides a clock signal having said first
frequency and generates a reference signal of not more than the frequency
bandwidth of said electrical interconnecting means.
10. A semiconductor device according to claim 8, wherein said optical
transmitting means includes a laser diode for oscillating said optical
clock signal and laser diode-driving means having the function of
converting said electrical clock signal into a drive current for said
laser diode.
11. A semiconductor device according to claim 8, wherein said optical
transmitting means includes optical amplifier means for amplifying said
optical clock signal.
12. A semiconductor device according to claim 11, wherein said optical
amplifier means is a selected one of a rare atom-doped optical fiber
amplifier based on optical pumping and a semiconductor optical amplifier
based on current injection pumping.
13. A semiconductor device according to claim 8, wherein said optical
transmitting means includes optical output control means having the
function of holding the signal amplitude of said optical clock signal at a
predetermined value.
14. A semiconductor device according to claim 13, wherein said optical
output control means is an auto power control circuit.
15. A semiconductor device according to claim 8, wherein said optical
receiving means includes a photo-detector for detecting said optical clock
signal and photodetector driving means having the function of converting
the photocurrent signal flowing in the photo-detector into said electrical
clock signal.
16. A semiconductor device according to claim 15, wherein said
photodetector is a photodiode.
17. A semiconductor device according to claim 8, wherein said optical
receiving means includes bandpass means for the frequency of said
electrical clock signal.
18. A semiconductor device according to claim 17, wherein said bandpass
means is a bandpass filter circuit.
19. A semiconductor device according to claim 8, wherein said optical
transmitting means includes a selected one of an optical fiber and an
optical waveguide.
20. A semiconductor device according to claim 8, wherein said optical
transmitting means includes at least a selected one of a lens, a mirror, a
grating and a prism.
21. A semiconductor device according to claim 8, wherein said optical
transmitting means includes optical branching means for splitting the
optical clock signal.
22. A semiconductor device according to claim 21, wherein said optical
branching means includes at least a selected one of an optical fiber star
coupler, an optical waveguide star coupler and a prism beam splitter.
23. A semiconductor device according to claim 8, wherein said optical
transmitting means includes at least a selected one of an optical path
converter, an optical collimator, an optical focusing means and optical
shield means.
24. A semiconductor device according to claim 23, wherein said optical path
converter includes at least a selected one of a mirror, a prism and a
grating, said optical collimator and said optical focusing means include
at least a selected one of a lens and a grating, and said optical shield
means includes at least a selected one of a partition, a cover and a mask.
25. A semiconductor device according to claim 8, wherein the optical clock
signal radiated on said optical receiving means by said optical
transmitting means and said optical waveguide has at least the minimum
receivable power at the frequency of said optical clock signal. |
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Claims  |
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Description  |
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BACKGROUND OF THE INVENTION
The present invention relates to an optical interconnection technique for
semiconductor devices having a semiconductor chip and a wiring substrate,
or more in particular to a clock signal supply system for a
ultra-high-speed processor of the computer.
With the increase in the scale of semiconductor devices, a higher-density
assembly and a greater number of input and output terminals of the
semiconductor chip are sought. In order to meet this requirement, a
flip-chip connection system is conventionally used as disclosed in
JP-A-61-177738 based on U.S. patent application Ser. No. 695,597 filed
Jan. 28, 1985. In this connection system, the semiconductor chip is
connected by bump electrodes on a wiring substrate. Electrodes can be
installed over the entire surface of the semiconductor chip, thereby
making multi-channel connections possible.
An increased internal operating speed of the semiconductor devices has come
to pose the problem of propagation delay time and crosstalks in the
electric interconnections of the substrate. For solving this problem,
conventional optical interconnection techniques as described in J. W.
Goodman et al. "Optical Interconnections for VLSI Systems", C. T. Sullivan
et al. "Integrated optics approach for high-density optical
interconnections in high-speed multichip IC packages", and Y. Yamada et
al. "Optical interconnections using silica-based waveguide on Si
substrate" are known. In these optical interconnection techniques, optical
waveguides are used for interconnecting semiconductor chips. For lack of
an increased time constant due to a capacitor and a resistor or crosstalks
due to induction unlike in electrical connections, optical waveguides are
said to permit high-speed, broad-band interconnections.
A multiplicity of input and output terminals for signal transmission
wiring, power supply wiring and clock distribution wiring are
indispensable for the semiconductor chip. The optical interconnections, in
spite of its advantage of a high speed and a broad band as compared with
electric interconnections, cannot reduce the size thereof to the order to
wavelength. Considering the delay due to the opto-electric or
electro-optic conversion time, on the other hand, the optical
interconnections are advantageous over the electric connections only
beyond a certain wiring length. It is therefore not advantageous to
replace all the electric interconnections with optical ones on a wiring
substrate, and it is necessary to secure a certain number of input-output
terminals for electric interconnections beforehand. For making electrical
and optical interconnections compatible with each other, applying the
optical interconnection technique to the flip-chip connection system
permitting multi-channel electrical connections is promising.
Two methods are available for performing optical interconnections in a
flip-chip connection system: One by interconnecting on the front side and
the other on the back side of the semiconductor chip. In a
highly-integrated semiconductor chip, however, heat generation is so large
that a fin radiator or a cooling channel is formed on the back of the
chip. In the flip-chip connection system, therefore, optical
interconnections are required on the front, i.e., on the wiring substrate
side of the semiconductor chip.
In the aforementioned optical interconnection techniques, the method for
forming electrical and optical interconnections on the wiring substrate is
not specifically determined. In the case where electrical and optical
interconnections are mixed in the same plane of the wiring substrate, for
example, the metal forming the electrical wirings does not transmit light,
and the dielectric material forming the optical waveguides does not pass
electric current. In addition, if electrical wirings are formed on optical
waveguides, an optical loss or a change in optical power is a probable
result. This has posed the problem of limiting the mutual arrangement of
the electrical and optical interconnections.
A clock signal supply system is disclosed in U.S. Pat. No. 5,184,027 and
U.S. Pat. No. 5,043,596. In conventional clock signal supply systems, each
destination of a clock signal has a phase adjustor in order to reduce the
time skew of the clock signal and to automate the phase adjusting process.
Such a phase adjuster is supplied with a clock signal and a phase
reference signal having a longer period than the clock signal through
electric interconnections such as cables or wiring substrate.
Generally, a shorter machine-cycle time, i.e., an improved speed of clock
signal is essential for a high-performance operation of the processor.
At the present rate of increase in machine speed, the machine-cycle time,
which stands at 7 to 9 nsec in the first half of the 1990s, is expected to
decrease to less than 1 nsec in the 2000s, which in turn will require a
clock signal of at least 1 GHz in frequency.
Such a ultra-high speed clock signal has not been taken into consideration,
however, in designing conventional clock signal supply systems.
Electrical interconnections such as cable and wiring substrate are limited
in frequency band by the effect of signal amplitude attenuation due to
reactances, reflection caused by impedance mismatch or crosstalks.
In conventional systems, considering the electrical wiring length of
several meters and the wiring diameter of less than several millimeters in
the processor, it has been very difficult to distribute the clock signal
of 1 GHz or more.
Conventional systems for distributing the clock signal by optical
interconnections include a configuration comprising a photodetector
arranged at each destination of clock signal for distributing the optical
clock signal emitted from a light source through such optical paths as
optical fiber, optical waveguide, lens and hologram.
The frequency band of optical interconnections is far wider than that of
electrical interconnections. It is therefore possible to distribute the
optical clock signal of 1 GHz or more in frequency to destinations. The
optical clock distribution systems that have been suggested in the prior
art, however, have failed to take into consideration the skew due to the
difference in optical path length caused by the refractive index
distribution, optical aberration, or optical misalignment, or due to
variations in the sensitivity or response characteristics of optical
detectors.
In a word, according to the prior art systems, the clock signal frequency
is undesirably limited by the skew.
Of all the skews, the one due to the difference in optical path length can
be reduced by using a programmable optical delay line described in the
U.S. Pat. No. 3,516,86 dated May 15, 1989.
The problem of this system, however, is that the operation is very
complicated as the distance between two lenses is mechanically changed by
manual operation.
When this system is applied to a computer packaged with high density
described in F. Kobayashi et al., "Hardware Technology for HITACHI M-880
Processor Group", Proceeding of the 41st Electronic Components and
Technology Conference, pp. 693-703, for example, it is extremely difficult
to adjust individual optical path lengths manually within a limited
package space.
Also, this system still cannot reduce the skew caused by optical detectors.
SUMMARY OF THE INVENTION
An object of the present invention is to provide an optical interconnection
technique compatible with electrical interconnections in a flip-chip
connection system. In attaining the object, proper mutual arrangement of
electrical and optical interconnections and proper assignment of functions
between them, as well as appropriate consideration of the method of
coupling and forming interconnections of optical devices are required.
Another object of the invention is to provide a clock signal supply system
having a high freedom of interconnection designing, in which electrical
interconnections and optical waveguide interconnections can be used
separately from each other in accordance with different applications
without affecting the mutual arrangement thereof.
Still another object of the invention is to provide a clock signal supply
system capable of distributing the clock signal very fast without causing
any phase deviation.
A further object of the invention is to provide a signal supply system with
optical interconnections having a very broad frequency band of more than 1
GHz as compared with electrical interconnections and capable of supplying
the clock signal without any phase deviation by the use of a phase
reference signal.
According to the present invention, there is provided a clock signal supply
system comprising optical waveguide interconnections in the space between
electrode members for connecting the semiconductor chip and a wiring
substrate in order to apply the optical interconnection technique to the
semiconductor device with a semiconductor chip in flip-chip connection
with the wiring substrate. Alternatively, a semiconductor chip and a
wiring substrate are connected by electrode members through throughholes
perpendicular to the main surface of an optical waveguide interconnection.
According to the above-mentioned configuration, optical waveguide
interconnections are performed by the use of spaces between electrode
members. The electrical wiring layer and the optical waveguide layer are
separated from each other, and therefore the arrangement of the electrical
wirings on the wiring substrate is not limited by the optical waveguide
interconnections. No interference is caused unlike in the case where
electrical wirings coexist in the same plane as an optical waveguide
layer. A multiplicity of input/output terminals can be taken out from a
semiconductor chip by means of electrode members through an optical
waveguide interconnection layer, thus making it possible to use the
electrical wirings and the optical waveguide interconnections separately
from each other in accordance with different applications.
In order to obviate the above-mentioned problem, an optical clock supply
system comprises a clock oscillator for generating a clock signal having a
predetermined frequency, an optical waveguide interconnection for
converting the clock signal into an optical signal, transmitting the
optical signal to a plurality of predetermined points and converting the
optical signal into an electrical signal at each destination, a reference
signal generator for dividing the frequency of the clock signal generated
from the clock oscillator and generating an electrical signal, an
electrical interconnection for transmitting the electrical signal divided
in frequency to the predetermined number of points, and a phase adjuster
for setting the signals in phase by adjusting the phase advance or
retardation of the electrical signal produced from the optical waveguide
interconnection on the basis of the reference signal transmitted by the
electrical interconnection and producing a clock signal having a
predetermined frequency and phase to an external circuit.
In the aforementioned clock signal supply system, the optical waveguide
interconnection may include an optical transmitter for converting the
electrical clock signal produced by the clock oscillator into an optical
clock signal and an optical transmission path for supplying the optical
clock signal to the optical receiver.
The clock signal supply system according to the invention may alternatively
comprise a reference signal generator which frequency-divides the clock
signal having a first frequency and generates a reference signal lower
than the frequency bandwidth of the electrical interconnection.
The clock signal supply system according to the invention may comprise an
optical transmitter including a laser diode for oscillating the optical
clock signal and a laser diode driver circuit for converting the
electrical clock signal into a drive current for the laser diode.
Further, the clock signal supply system according to the invention may
comprise an optical transmitter including an optical amplifier for
amplifying the optical clock signal.
The optical amplifier may be a rare atom-doped fiber amplifier or a
semiconductor optical amplifier based on current pumping.
The optical transmitter of the clock signal supply system according to the
invention may include an optical output controller having the function of
holding the signal amplitude of the optical clock signal to a
predetermined value.
The optical output controller may be an auto power control circuit.
The optical receiver of the clock signal supply system described above may
include a photodetector for detecting the optical clock signal and a
photodetector driver circuit having the function of converting the
photocurrent signal flowing in the photodetector into an electrical clock
signal.
The photodetector may be configured of a photodiode.
The optical receiver of the signal supply system according to the invention
may include a bandpass device for the frequency of the electrical clock
signal.
The bandpass device may include a bandpass filter circuit.
Further, the clock signal supply system according to the invention may
comprise an optical transmission path including an optical fiber and/or an
optical waveguide.
Also, the optical transmission path may include at least a lens, a mirror,
a hologram and/or a prism.
The optical transmission path of the clock signal supply system according
to the invention may include an optical splitter for splitting the optical
clock signal transmitted thereto.
The optical splitter may include at least one of an optical-fiber star
coupler, an optical-waveguide star coupler and a beam splitter.
The optical transmission path may include at least one of an optical path
changer, a focusing/collimating lens and an optical shield.
The optical path changer includes at least one a mirror, a prism and a
grating. The focusing/collimating lens includes a convex/concave lens
and/or a grating lens. Further, the optical shield may have at least one
of a partition, a cover and a mask.
In the clock signal supply system according to the invention, the optical
clock signal incident upon the optical receiver by the optical transmitter
and the optical transmission path is larger than the minimum receivable
optical power at the frequency of the optical clock signal.
Also, a processor including a clock signal supply system according to the
invention may comprise at least two semiconductor modules each including a
wiring substrate with at least two semiconductor devices electrically
connected to each other.
The processor includes the optical receiver and the phase adjuster arranged
in each semiconductor module. The optical receiver receives the optical
clock signal splitted by the optical splitter and supplies a clock signal
having a predetermined phase to each semiconductor module.
Further, in a processor comprising the clock signal supply system according
to the invention, the optical receiver and the phase adjuster of the clock
signal supply system may be installed on the same semiconductor substrate
as the processor.
Also, the processor may comprise the optical receiver formed in a
semiconductor device of silicon, with the optical clock signal less than 1
.mu.m in wavelength.
Furthermore, the optical receiver of the processor may include a chemical
compound semiconductor on a semiconductor device of silicon, with the
optical clock signal having a wavelength of 1 .mu.m or more.
The operation of the system according to the invention will be described
below.
First, the electrical clock signal generated from the clock oscillator is
converted into an optical clock signal by the optical transmitter.
The optical clock signal is transmitted to the optical receiver through the
optical transmission path of sufficiently large frequency bandwidth (which
may alternatively be described as an optical interconnection according to
embodiments) and is converted again into an electrical clock signal by the
optical receiver.
In other words, a clock signal having a high frequency is transmitted as an
optical signal and finally converted into an electrical signal.
The electrical clock signal outputted from the clock oscillator, on the
other hand, is divided in frequency by a reference signal generator and is
transmitted to a predetermined position through an electrical
interconnection.
Further, a first electrical clock signal outputted from the clock
oscillator and a second electrical clock signal frequency-divided by the
reference signal generator are both supplied to a phase adjuster.
The phase adjuster detects the time lag (phase deviation) between the two
signals on the basis of the rise or fall of the first and second
electrical signals and puts the two signals into phase by the use of a
delay circuit, for example.
The phase adjuster also supplies a phase-adjusted clock signal to each
destination.
As a result, the frequency of the clock signal is not limited by the
bandwidth of an electrical interconnection unlike in the prior art.
More specifically, there is provided a clock signal supply system for
supplying a clock signal having a high frequency without any phase
deviation between clocks.
As described above, a clock signal supply system according to the invention
has the advantage that any destination is not affected by the skew (which
hereinafter refers to any phase deviation of the clock signal in an LSI at
a clock destination) of the optical clock signal which has been
unrealizable in the conventional systems.
The system according to the invention is effectively applicable to various
processors in a main frame computer, for example, including the one having
a long interconnect wiring for supplying clock signals.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a sectional view showing a first embodiment of the invention.
FIG. 2 is a sectional view taken in line A--A' in FIG. 1.
FIGS. 3a to 3e are diagrams showing the process for fabricating a
semiconductor device.
FIGS. 4a to 4d are diagrams showing the structure of optical waveguide
interconnections.
FIG. 5 is a diagram showing a method of splitting or deflection of optical
waveguide interconnections.
FIG. 6 is a diagram showing a mirror configuration required for optical
interconnections between a wiring substrate and a semiconductor chip.
FIGS. 7a to 7c are diagrams showing the photolithography process for
fabricating a mirror.
FIG. 8 is a sectional view showing a configuration for clock signal
distribution using the optical waveguide interconnections according to a
second embodiment of the invention.
FIG. 9 is a top plan view showing a second embodiment of the invention.
FIG. 10 is a top plan view showing a third embodiment of the invention.
FIG. 11 is a diagram showing the configuration of a clock signal supply
system according to a fourth embodiment of the invention.
FIG. 12 shows the configuration of an optical transmitter according to a
fifth embodiment of the invention.
FIG. 13 is a diagram showing the configuration of an optical receiver
according to a sixth embodiment of the invention.
FIG. 14 is a sectional view showing the configuration of a processor to
which a clock signal supply system is applied according to a seventh
embodiment of the invention.
FIG. 15 is a diagram showing a sectional view showing the configuration of
a processor to which a clock signal supply system is applied according to
an eighth embodiment of the invention.
FIG. 16 is a diagram showing a sectional view of the configuration of a
processor to which a clock signal supply system is applied according to a
ninth embodiment of the invention.
FIG. 17 is a top plan view for explaining the configuration of an optical
waveguide interconnection according to an eighth embodiment of the
invention.
FIG. 18 is a perspective view showing the configuration of another optical
interconnection according to the invention.
FIG. 19 is a diagram for explaining another optical interconnection
according to the invention.
FIG. 20 is a sectional view showing the configuration of a processor to
which a clock signal supply system is applied according to a tenth
embodiment of the invention.
FIG. 21 is a sectional view showing the configuration of a processor to
which a clock signal supply system is applied according to an eleventh
embodiment of the invention.
FIG. 22 is a diagram showing a perspective view of the configuration of a
processor to which a clock signal supply system is applied according to a
twelfth embodiment of the invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
Embodiments of the invention will be described below with reference to the
accompanying drawings.
FIG. 1 is a diagram showing a semiconductor device according to a first
embodiment of the invention, and FIG. 2 is a sectional view taken in line
A--A' in FIG. 1. In FIGS. 1 and 2, a semiconductor chip 1 is connected by
flip chip bonding to a wiring substrate 2. An optical waveguide
interconnection 5 is interposed in the space between electrode members 4.
The semiconductor chip 1 is connected with a wiring layer 3 of the wiring
substrate 2 by an electrode member 4 laid through a through hole 7
perpendicular to the principal surface of the optical waveguide
interconnection 5.
The semiconductor chip 1 and the wiring substrate 2 are made of a silicon
or a chemical compound semiconductor. The semiconductor chip 1 has the
surface of the wiring substrate 2 thereof formed with a circuit and
optical device section (including a surface-emitting diode and a
photodiode). The wiring layer 3 is made of a metal (such as Cu or Al) and
an insulating member (such as polyimide or glass). The electrode members 4
are made of a metal bump (Pb-Sn solder, Au, etc.). The optical waveguide
interconnection 5 is formed of a dielectric material (polyimide, glass,
etc.) and includes a mirror or a grating for coupling to the optical
device section.
The optical waveguide interconnection 5 is formed on the surface of the
wiring layer 3 by such a method as coating or vapor deposition after the
wiring layer 3 is formed on the wiring substrate 2. The patterning of the
optical waveguide interconnection 5 and the through hole 7 are
accomplished by such a method as photolithography. The semiconductor chip
1 with the electrode members 4 formed in advance thereon is installed,
with the circuit-mounted side down, at a predetermined position of the
wiring substrate 2, and the electrode members 4 are molten to connect the
semiconductor chip 1 and the wiring substrate 2 electromechanically. The
self-aligning function of the molten electrode members 4 based on the
surface tension thereof eliminates the displacement between the optical
device section of the semiconductor chip 1 and the optical waveguide
wiring 5, thereby securing optical coupling.
The advantage of the first embodiment is that the optical waveguide can be
connected to the optical device section after a multiplicity of electrical
input and output terminals between the chip 1 and the electrical wiring in
the wiring layer 3 are connected to each other. The arrangement of the
wiring layer 3 or the electrode members 4 are not limited by the
arrangement of the optical waveguide interconnection 5. In the case where
optical waveguide interconnections are laid at 20 -.mu.m pitches between
the electrode members 4 with 200 -.mu.m pitches, for example, 2500 pins of
electrical connections and about 400 lines of optical waveguide
interconnections 5 can be taken out from a 1-cm square semiconductor chip
1. The property of the electrical wiring and the optical waveguide
interconnection can be best utilized if the optical waveguide
interconnection 5 is used for the broadcast wirings (including bus network
wiring and clock wiring) and the long-distance wiring (such as inputs and
outputs with external units of the system) and the wiring layer 3 is used
for other signal or power supply wirings. Since the optical waveguide
interconnection 5 is arranged on the surface of the chip 1 facing the
substrate 2, the cooling of the semiconductor chip 1 is not impeded from
the opposite side. The self-alignment function of the electrode members 4
may be used for optical coupling between the optical waveguide
interconnection 5 and the optical device section of the semiconductor chip
1, thereby eliminating the troublesome job of optical alignment. According
to the embodiment under consideration, lattice-arranged optical waveguide
interconnections 5 is formed, in which each waveguide can be considered
independent as optical signals do not interfere with each other at
intersections.
An example of the fabrication process of a semiconductor device will be
explained with reference to FIGS. 3a to 3e.
The first step forms, first of all, a multilayer wiring layer 101 and
electrodes 102 on the surface of a wiring substrate 100 as shown in FIG.
3a. The wiring layer 101 is formed by repeating the coating of an
interlayer insulating film of polyimide or the like, vapor deposition or
plating of a metal wire such as aluminum or copper and the patterning by
photolithography.
The second step, as shown in FIG. 3b, forms a core layer 104 and clad
layers 103, 105 of light-sensitive polymer by coating or applying a film.
The third step, as shown in FIG. 3c, exposes the clad layers 103, 105 and
the core layer 104 to light by the use of a photomask 106. The transparent
portion of the photomask 106 causes the light-sensitive polymer to be
exposed to the ultraviolet light to perform selective photopolymerization.
After exposure, the refractive index of the core layer 104 is higher than
that of the clad layers 103, 104.
The fourth step, as shown in FIG. 3d, removes the undeveloped portion by
development and thus accomplishes the patterning of the clad layers 103,
105 and the core layer 104 thereby to form an optical waveguide
interconnection. In the process, the electrodes 102 are bared.
The fifth step, as shown in FIG. 3e, connects the electrodes 108 of the
semiconductor chip 107 and the electrodes 102 of the multilayer wiring
layer 101 by solder bumps 109.
According to a semiconductor device fabricated in the manner above, the
optical signal propagates through the core layer 104 and the electrical
signal through the wiring layer 101.
Apart from the above-mentioned fabrication process representing an example
of two clad layers and one core layer of an optical waveguide, examples of
several other structures of the optical waveguide will be explained with
reference to FIGS. 4a to 4d.
FIG. 4a shows a ridge-type waveguide 121 including a core 121 formed on an
electrical wiring layer 120, FIG. 4b a waveguide with a core 123
sandwiched from two directions by clads 122, 124 as in the case of the
waveguide shown in FIG. 3, FIG. 4c a buried-type waveguide with a core 126
surrounded from three directions by a clad 125, and FIG. 4d a buried-type
waveguide with a core 128 surrounded from the four directions by a clad
127.
The fabrication process becomes increasingly complicated although the
propagation loss of the waveguide decreases progressively in FIGS. 4a to
4d in that order. Which of the examples is to be selected depends on the
intervals and distance between the waveguide interconnections and the
wiring length of the waveguide.
The first embodiment shows a case in which optical waveguide
interconnections cross each other in lattice form. By changing the
photomask pattern shown in FIG. 3c, for example, the optical signal may be
caused to branch or deflected as shown in FIG. 5. The semiconductor chip
200 and the electrical wiring layer 201 are connected by bumps 202, and
the optical waveguide interconnection 203 on the wiring layer 201 is
formed between the bumps 202. The optical signal is caused to branch or
deflected by a reflection surface inclined 45 degrees to the optical axis
at points 220 and 221 respectively.
For transmission and receiving between an optical waveguide interconnec | | |