A solid state laser includes a diamond crystal as a medium of laser beam emission, which generates a laser beam having a wavelength of 225 to 300 nm through exciton light emission.
A current injection-type diamond ultraviolet light-emitting device is provided that achieves the diamond free exciton recombination radiation by forming electrodes on a high-quality diamond crystal and applying a DC voltage between electrodes to inject carriers. A diamond crystal can be selected in terms of photoluminescent spectrum at room temperature and the half width of the Raman scattering peak intrinsic to the diamond.
There is provided a method of reliably preparing a diamond semiconductor by irradiating diamond with a corpuscular ray. In this method, when a diamond substrate is irradiated with a corpuscular ray, the diamond substrate is maintained at a temperature of 300.degree. C. to 2000.degree. C., the angle of the surface of the diamond substrate irradiated is set within -20.degree. to +20.degree. to the (001) crystal plane of the diamond substrate, and the angle of the direction of the corpuscular ray is set within -20.degree. to +20.degree. to the <001> crystal orientation of the diamond substrate. Preferably, the direction of the corpuscular ray forms an angle of 3.degree. to 10.degree. with the <001> crystal orientation.
A solid state laser is provided having as the laser medium diamond and an optically active dopant element which is found to lase in the solid matrix. The dopant is preferably titanium, vanadium, chromium, iron, cobalt, nickel, zinc, zirconium, niobium, cadmium, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold, mercury, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and uranium. Erbium is especially preferred. The laser medium is formed as dopants are added by ion implantation to a diamond crystal as the diamond is grown by chemical vapor deposition.
In general, the semiconductor laser device of the present invention comprises an emitting element comprising a doped diamond, which is doped with atoms of at least one rare earth metal and/or molecules of at least one compound containing a rare earth metal. The semiconductor laser device assembly according to the present invention comprises an emitting element of a doped diamond, which is a diamond doped with atoms of at least one rare earth metal and/or molecules of at least one compound containing a rare earth metal, and a thermal releasing element of a substantially undoped diamond, on which the semiconductor laser device are placed.
