A high repetition-rate laser plasma target source system and lithography system is disclosed. The target source system comprises in a preferred embodiment a liquid tank source and freezer which freezes microscopic particles into crystal shapes which are projected by a nozzle jet from a high repetition rate liquid-droplet injector into the path of a flashing laser beam, which results in producing soft x-rays of approximately 13 nm. Uncollected and unshot target crystals are collected and reliquified by a heater source in order to be recycled back to the liquid tank source. Optionally an auxiliary source and detector system can be used to allow for instantaneous triggering of the laser beam. The target source system can be incorporated into well known EUV lithography systems for the production of wafer chips.
A method and an apparatus for generating X-rays in which continuous X-rays can be generated by irradiating a focused laser in the air using a liquid as a target, thereby generating plasma. A high concentration electrolyte aqueous solution, such as CsCl and RbCl, is circulated by means of a pump (2) and the surface of a jet of high concentration electrolyte aqueous solution injected from a glass nozzle (3) is exposed to an irradiation of focused femtosecond laser pulse (6) via an objective lens (7), thereby generating X-ray pulses.
A plasma oscillator photonic energy water heater/steam boiler, establishes, amplifies and stores photonic energy in a plasma wherein resonance and temporary energy storage is maintained until energy is transferred on demand by thermal radiation and conduction of molecular kinetic energy to a heat exchanger having water to be heated therein. The chamber is a closed hollow internally reflective mirrored cylinder which includes parallel and optically resonant mirrored surfaces for sustaining a plasma oscillation within the container. A containerized molecular gas media is flooded with broad band electromagnetic radiation in order to create population inversions at the electron level in the gaseous atmosphere, and hence, store photonic energy in the plasma oscillator. Water in a heat exchanger immersed within the plasma is heated by thermal radiation energy transfer, and by conduction from a high molecular kinetic energy stored within the plasma.
An illumination apparatus for illuminating an object with X-rays. The illumination apparatus has a high illumination efficiency, and the numerical aperture of the X-rays is nearly uniform over an arcuate area, and is independent of the illumination position. The apparatus comprises an excitation energy light generation unit for generating excitation energy light rays and a target member having a curved surface and plurality of X-ray sources formed thereon that emit X-rays when irradiated by the light rays. The apparatus further comprises an illumination optical system that images X-rays from said plurality of X-ray sources onto the object to be illuminated. The target member curved surface may be cylindrical. The target member may also be tape-shaped and provided along the curved surface. Further, the target member may be metallic, particulate, liquid or gas.
A high repetition-rate laser plasma target source system wherein ice crystals are irradiated by a laser and lithography system. The target source system comprises in a preferred embodiment a liquid tank source and freezer means which freezes microscopic particles into crystal shapes which are projected by a nozzle jet from a high repetition rate liquid-droplet injector into the path of a flashing laser beam, which results in producing soft x-rays of approximately 11.7 nm and 13 nm. Uncollected and unshot target crystals are collected and reliquified by a heater source in order to be recycled back to the liquid tank source. Optionally an auxiliary source and detector system can be used to allow for instantaneous triggering of the laser beam. The target source system can be incorporated into well known EUV lithography systems for the production of wafer chips.
A laser plasma X-ray source has an improved X-ray conversion efficiency and a minimized occurrence of debris, and a semiconductor lithography apparatus using the same and a method therefor are provided. An X-ray generation unit has a vacuum chamber 5 which encases the target; target supply unit 110 which supplies a fine particle mixture gas target into the vacuum chamber 5; a laser irradiation unit 120 which irradiates a laser beam 2 on the particle mixture gas target 10; and a target recovery unit 130 which recovers unused particle mixture gas target from the vacuum chamber 5.