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| United States Patent | 5496668 |
| Link to this page | http://www.wikipatents.com/5496668.html |
| Inventor(s) | Guckel; Henry (Madison, WI);
Christenson; Todd R. (Madison, WI);
Skrobis; Kenneth (Madison, WI) |
| Abstract | In the formation of microstructures, a preformed sheet of photoresist, such
as polymethylmethacrylate (PMMA), which is strain free, may be milled down
before or after adherence to a substrate to a desired thickness. The
photoresist is patterned by exposure through a mask to radiation, such as
X-rays, and developed using a developer to remove the photoresist material
which has been rendered susceptible to the developer. Micrometal
structures may be formed by electroplating metal into the areas from which
the photoresist has been removed. The photoresist itself may form useful
microstructures, and can be removed from the substrate by utilizing a
release layer between the substrate and the preformed sheet which can be
removed by a remover which does not affect the photoresist. Multiple
layers of patterned photoresist can be built up to allow complex three
dimensional microstructures to be formed. |
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Title Information  |
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Drawing from US Patent 5496668 |
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Formation of microstructures using a preformed photoresist sheet |
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| Publication Date |
March 5, 1996 |
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| Filing Date |
November 16, 1994 |
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| Parent Case |
This is a divisional of Ser. No. 08/066,988 filed on May 24, 1993 U.S. Pat.
No. 5,378,583, is a continuation-in-part of application Ser. No.
07/994,952, filed Dec. 22, 1992, now abandoned, by Henry Guckel, Todd R.
Christenson, and Kenneth Skrobis, entitled "Formation of Microstructures
Using a Preformed Photoresist Sheet", the disclosure of which is
incorporated herein by reference. |
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Title Information  |
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References  |
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U.S. References |
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| | Reference | Relevancy | Comments | Reference | Relevancy | Comments | 3449221
|      Your vote accepted [0 after 0 votes] | | 3535137
|      Your vote accepted [0 after 0 votes] | | 5357807 Guckel 73/721 Oct,1994 |      Your vote accepted [0 after 0 votes] | | 5327033 Guckel 310/40MM Jul,1994 |      Your vote accepted [0 after 0 votes] | | 5206983 Guckel 29/598 May,1993 |      Your vote accepted [0 after 0 votes] | | 5190637 Guckel 205/118 Mar,1993 |      Your vote accepted [0 after 0 votes] | | 5189777 Guckel 29/424 Mar,1993 |      Your vote accepted [0 after 0 votes] | | 4872888 Ehrfeld 210/500.35 Oct,1989 |      Your vote accepted [0 after 0 votes] | | 4797211 Ehrfeld 210/321.84 Jan,1989 |      Your vote accepted [0 after 0 votes] | | 4784935 Ehrfeld 430/321 Nov,1988 |      Your vote accepted [0 after 0 votes] | | 4780382 Stengl 430/5 Oct,1988 |      Your vote accepted [0 after 0 votes] | | 4738010 Ehrfeld 29/898.12 Apr,1988 |      Your vote accepted [0 after 0 votes] | | 4705605 Becker 205/75 Nov,1987 |      Your vote accepted [0 after 0 votes] | | 4703559 Ehrfeld 29/854 Nov,1987 |      Your vote accepted [0 after 0 votes] | | 4698285 Ehrfeld 430/5 Oct,1987 |      Your vote accepted [0 after 0 votes] | | 4694548 Ehrfeld 205/75 Sep,1987 |      Your vote accepted [0 after 0 votes] | | 4693791 Becker 205/50 Sep,1987 |      Your vote accepted [0 after 0 votes] | | 4661212 Ehrfeld 205/75 Apr,1987 |      Your vote accepted [0 after 0 votes] | | 4563250 Becker 205/50 Jan,1986 |      Your vote accepted [0 after 0 votes] | | 4563251 Becker 205/50 Jan,1986 |      Your vote accepted [0 after 0 votes] | | 4541977 Becker 264/102 Sep,1985 |      Your vote accepted [0 after 0 votes] | | 4493753 Becker 205/73 Jan,1985 |      Your vote accepted [0 after 0 votes] | | 4422905 Becker 205/75 Dec,1983 |      Your vote accepted [0 after 0 votes] | | 4351653 Becker 55/394 Sep,1982 |      Your vote accepted [0 after 0 votes] | | 4108938 Rosenblatt 264/127 Aug,1978 |      Your vote accepted [0 after 0 votes] | | 4107351 James 430/323 Aug,1978 |      Your vote accepted [0 after 0 votes] | | 4035522 Hatzakis 430/5 Jul,1977 |      Your vote accepted [0 after 0 votes] | | 3984582 Feder 430/296 Oct,1976 |      Your vote accepted [0 after 0 votes] | | 3886584 Cook, Jr. 257/410 May,1975 |      Your vote accepted [0 after 0 votes] | | | | | |
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References  |
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Description  |
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FIELD OF THE INVENTION
This invention pertains generally to the field of semiconductor and
micromechanical devices and processing techniques therefor, and
particularly to the photoresist used in formation of microminiature
structures such as those formed of metal.
BACKGROUND OF THE INVENTION
Deep X-ray lithography involves a substrate which is covered by a thick
photoresist, typically several hundred microns in thickness, which is
exposed through a mask by X-rays. X-ray photons are much more energetic
than optical photons, which makes complete exposure of thick photoresist
films feasible and practical. Furthermore, since X-ray photons are short
wavelength particles, diffraction effects which typically limit device
dimensions to two or three wavelengths of the exposing radiation are
absent for mask dimensions above 0.1 micron. If one adds to this the fact
that X-ray photons are absorbed by atomic processes, standing wave
problems, which typically limit exposures of thick photoresists by optical
means, become a nonissue for X-ray exposures. The use of a synchrotron for
the X-ray sources yields high flux densities--several watts per square
centimeter--combined with excellent collimation to produce thick
photoresist exposures without any horizontal runout. Locally exposed
patterns should therefore produce vertical photoresist walls if a
developing system with very high selectivity between exposed and unexposed
photoresist is available. This requirement has been satisfied using
polymethylmethacrylate (PMMA) as the X-ray photoresist, and an aqueous
developing system. See, H. Guckel, et al., "Deep X-ray and UV
Lithographies for Micromechanics," Technical Digest, Solid State Sensor
and Actuator Workshop, Hilton Head, S.C., June 4-7, 1990, pp. 118-122.
Deep X-ray lithography may be combined with electroplating to form high
aspect ratio structures. To do so requires that the substrate be furnished
with a suitable plating base prior to photoresist application. Commonly,
this involves a sputtered film of adhesive metal, such as chromium or
titanium, which is followed by a thin film of metal which is suitable for
electroplating the metal to be plated. In appropriate cases, the use of an
initial layer of adhesive metal is not necessary. Exposure through a
suitable mask and development are followed by electroplating. This process
results, after cleanup, in fully attached metal structures with very high
aspect ratios. Such structures were reported by W. Ehrfeld and co-workers
at the Institute for Nuclear Physics (KFK) at Karlsruhe in West Germany.
Ehrfeld termed the process "LIGA" based on the first letters for the
German words for lithography and electroplating. A general review of the
LIGA process is given in the article by W. Ehrfeld, et al., "LIGA Process:
Sensor Construction Techniques Via X-Ray Lithography," Technical Digest,
IEEE Solid State Sensor and Actuator Workshop, 1988, pp. 1-4.
A crucial factor in the production of microminiature devices, such as those
formed by the LIGA process, is the photoresist that is used. As noted,
PMMA has been successfully used as the photoresist for formation of LIGA
structures. The PMMA films have been produced by casting of liquid MMA
directly on the substrate, with the film being reduced to the desired
thickness, generally not more than two to three hundred microns, with a
casting jig. The cast film is then solidified, typically by utilizing a
polymerization agent or initiator in the casting solution and a
cross-linking agent which results in cross-linking upon curing. There are
several disadvantages and limitations of the PMMA films formed in this
manner. The casting procedures require special equipment and fixturing,
which adds to the time and cost of the process. As with almost all casting
operations, a heat cycle is necessary to produce the solidified film.
Typically, annealing cycles up to 110.degree. C. are required. These heat
cycles build up strain in the film due to a significant mismatch in
thermal expansion coefficients between the PMMA photoresist and the
substrate. Internal strain in the photoresist also occurs due to the
shrinking of the film during curing, which has been observed to result in
up to a 20% shrinkage of the film from its as-cast state. As a
consequence, the cast film, after curing, often has poor adhesion to the
substrate and can buckle off the substrate. Even where adhesion to the
substrate is retained, the internal strain that is built into the film can
result in distortion of the walls formed in the film after patterning of
the photoresist by X-ray exposure and development.
PMMA photoresist films are typically cross-linked through the addition of a
cross-linking agent to the casting solutions to minimize crazing of the
films. Because of this cross-linking, it is necessary to have an
additional X-ray exposure step, a blanket exposure of the entire
photoresist film, followed by development of the film to remove the resist
when its use is complete. Even with the use of cross-linking agents, the
maximum thickness of resists which have been successfully cast, exposed,
and developed have been in the range of about 300 microns. Most samples of
PMMA photoresist films having thickness greater than 200 microns have
unacceptable amounts of crazing and adhesion loss. Typically, the cast
PMMA films may only be used once because such films are found to exhibit
significant crazing after the microplating of metal into the patterned
openings in the film during the electroplating step of the LIGA process.
The thicknesses of photoresist utilized for micromechanical processing is
typically a few hundred microns or less, which is below the typical
thicknesses of preformed photoresist sheets. Ehrfeld and co-workers have
reported attempts to adhere a preformed PMMA photoresist sheet to a
substrate, with the photoresist being calendered before adherence to the
substrate to reduce the sheet to the desired thickness for carrying out
the LIGA process. However, such attempts were reported to be unsuccessful,
apparently because the strain fields in the calendered photoresist were
excessive.
SUMMARY OF THE INVENTION
In accordance with the present invention, production of microstructures is
facilitated by utilizing a photoresist structure which comprises a
preformed sheet which can be adhered to a substrate before further
processing so as to yield essentially no or very little strain within the
photoresist. The preformed sheet is of conventional thickness, which
allows convenient handling of the sheet as it is adhered to the substrate,
with the thickness of the sheet being reduced to the desired thickness for
the formation of microstructures by mechanically removing a portion of the
sheet, as by milling by a micromill. A preferred photoresist sheet is
formed of substantially non-crosslinked linear polymethylmethacrylate
which has a very high average molecular weight and which is essentially
strain free. Either before or after the sheet of photoresist is reduced to
the desired thickness, the photoresist may be patterned by exposure
through a mask to radiation which will affect the susceptibility of the
exposed photoresist material to a developer. Depending on the photoresist
used, the radiation may be X-ray radiation such as from a synchrotron or,
in appropriate cases, deep UV light. The exposed portions of the
photoresist (or unexposed portions, depending on the type of photoresist)
may then be removed in a suitable developer.
For carrying out the formation of electroplated microstructures utilizing
the present invention, a plating base is applied to a substrate prior to
the photoresist. A non-exposed photoresist may then be adhered onto the
plating base, and the photoresist then exposed. The exposed portions are
then removed using a developer, and metal is then electroplated onto the
exposed plating base to fill the area defined by the void(s) in the
photoresist. The remaining photoresist may then be removed. Where the
photoresist is formed of non-crosslinked PMMA, removal can take place by
utilizing a solvent which dissolves the non-crosslinked PMMA. Where a
cross-linked PMMA sheet is utilized, an additional blanket exposure to
synchrotron X-rays is required before the photoresist is removed. By
utilizing the preferred non-crosslinked PMMA photoresist sheet, this
additional exposure step can be avoided, which produces a significant
savings in time and expense over procedures which require a blanket
exposure.
Where the photoresist is to be applied over existing structures formed on a
substrate, relatively thin coats of conventional photoresist, such as
PMMA, may then be spun onto the substrate to cover the structures. The
photoresist sheet is then placed on top of the spun on photoresist and the
interface between the two is wetted with a monomer. For example, with high
molecular weight PMMA being utilized as the material of the photoresist
sheet, a lower molecular weight PMMA dissolved in a solvent is spun on to
the substrate to cover the mechanical structures, and the monomer, liquid
methylmethacrylate, is then applied to the interface between the two which
results in a solvent bonding of the materials at the interface. The
preformed photoresist sheet is generally much thicker than the spun on
photoresist, which need only be thick enough to cover the existing
structures, typically a few microns or tens of microns in height.
The adherence of a preformed photoresist layer onto the substrate, and the
mechanical milling of the photoresist sheet to a desired thickness,
results in a photoresist of any desired thickness which can be precisely
controlled using the mechanical milling process. Good adhesion of the
photoresist sheet to the substrate is obtained and with very low internal
strain within the photoresist. Consequently, much thicker photoresist
structures can be formed than has heretofore been possible utilizing
conventional photoresist materials without substantial distortion of the
walls of the photoresist during the process of exposing the photoresist
and removing the exposed resist with developer. The photoresist of the
invention may be utilized during more than one electrodeposition process,
inasmuch as the preformed PMMA sheet exhibits much less crazing and other
damage during the electro-plating process than is observed in conventional
cast PMMA photoresist layers.
The present invention may further be used to produce photoresist structures
which can be released from the substrate. The strain free photoresist
sheet, e.g., PMMA, either linear or cross-linked, is adhered to a release
layer on a substrate. After the photoresist sheet is patterned, the
release layer may be removed by a remover which etches or dissolves the
release layer without substantially affecting the remaining photoresist.
Because the photoresist sheet is strain free, the photoresist parts which
are thus freed from the substrate are dimensionally stable and will not
distort or curl.
The present invention also allows multiple layers of patterned photoresist
to be constructed which can be applied to a substrate or utilized as a
separate product. Such multiple layer structures allow the formation of
metal structures by electrodeposition which can have a variety of shapes
which vary in all three dimensions. For example, the metal structures may
be formed having upper portions which are wider or which extend outwardly
from the lower portions, and which undergo several variations in geometry
from the top to the bottom of the structure. Such multiple layer
photoresist structures can be formed in various manners in accordance with
the present invention. In an exemplary multiple layer process, a second
layer of photoresist is bonded to the upper surface of the first layer
after the first layer has been exposed but before it has been developed.
The second layer is then milled to the desired thickness and an X-ray
exposure of the second layer photoresist takes place. The exposed
photoresist is then developed (removed) and metal structures may be
electroplated in the voids vacated by the exposed photoresist. Structures
having more than two layers may be built up in this manner. Generally, it
is necessary when utilizing this process that the exposure for the second
layer (or subsequent layers) either lie within the exposed regions in the
first layer (or all underlying layers) or that the incident X-rays be
sufficient to fully penetrate and expose all layers of photoresist.
In another exemplary multilayer process, a layer of preformed photoresist
(e.g. linear or cross-linked PMMA) which is not adhered to a substrate is
exposed on one side. The photoresist sheet may be quite thick, e.g. 1 mm
to 3 mm, so that the incident X-rays do not necessarily cause sufficient
exposure of the photoresist in all exposed areas to allow the photoresist
sheet to be fully exposed all the way through. The exposed photoresist may
then be developed with a developer to remove it, and then the preformed
sheet may be bonded to a substrate on the side which had been exposed and
developed. The free side of the photoresist is then milled down to a
desired thickness which is below the level at which all of the areas
exposed to X-rays were sufficiently exposed so that they will be
completely removed by the photoresist to leave a pattern of voids therein.
This provides an initial single layer structure which is equivalent to a
structure produced by bonding a photoresist to a substrate first, and then
a milling to a desired thickness and then exposing to X-rays and
developing the exposed photoresist. However, multiple photoresist layers
may be formed by treating a free sheet (unbonded to a substrate) of
photoresist in this manner, whether the initial layer is formed in this
manner or is formed after being adhered to the substrate. For example, the
second sheet of photoresist may be exposed to X-rays on one side in a
desired pattern, the exposed photoresist developed to remove it, and then
the surface of the photoresist which has been exposed may be bonded to the
free surface of the first layer, with milling of the free surface of the
second layer carried out to reduce the thickness of the second layer to
below the level at which the exposed photoresist has been developed and
fully removed to leave a pattern of voids. Third and additional layers may
be formed in a similar manner.
The preformed photoresist sheet may also be exposed on one side and a first
layer bonded to a substrate (or to a previously applied photoresist layer)
at the surface which had been exposed to X-rays, but without developing
the exposed photoresist. The sheet is then milled down to a level which is
below the level at which the exposed photoresist would be fully removed
from the developer. The photoresist may then be removed immediately.
However, it is not necessary to do so, and a second preformed photoresist
sheet may be treated in a similar manner, exposing one side to X-rays
partially through, adhering the exposed side to the prior layer, and then
milling down the second layer to a thickness such that all areas of the
photoresist which were exposed to X-rays are sufficiently fully exposed so
that they will be fully developed. When the desired number of layers have
been built up, the entire laminated structure may be developed with a
liquid photoresist developer to remove all of the exposed photoresist. In
this process, it is necessary that the areas of exposed photoresist in
each layer overlap one another so that the developer can work through the
layers to remove all of the exposed photoresist. Alternatively, the
exposed regions must be accessible at the side edges of the laminate.
In either of the above-processes, it is not essential that the substrate be
a metallic substrate. For example, the substrate may comprise a thick
photoresist sheet, or a variety of other materials, including a
semiconductor wafer with or without electronic circuitry thereon. This
initial thick photoresist sheet may also have been previously processed so
that it contains either developed structures or undeveloped X-ray exposed
regions. Additional photoresist layers are then bonded to the first layer
and milled in sequence to form a laminate, with the various layers either
being developed before or after they are bonded together. The initial
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