Methods for making pulsed and continuous discharge plasma light sources for extreme ultraviolet(EUV) projection lithography and soft-x-ray microscopy as well as other applications are disclosed. A first light source of doubly ionized lithium ions emits over a narrow bandwidth of approximately 13.5 nm. A second light source of beryllium ions radiates at approximately 7.60 nm. A third light source of boron ions radiates at approximately 4.86 nm, and a fourth light source of carbon ions radiates at approximately 3.38 nm. Preferred embodiments of apparatus for generating pulsed and continuous discharge sources are disclosed.
An extreme ultraviolet source with wide-angle vapor containment and reflux is described. In the optical output directions radiating from the source plasma there is an array of tapered buffer gas heat pipes, with wick structures in the walls. In directions toward the insulators separating the discharge electrodes there are disc-shaped buffered gas heat pipes that prevent metal vapor from condensing on these insulators. A preferred electrode configuration has three electrode discs that operate in the star pinch mode. Another electrode configuration comprises two electrode discs and supports a pseudospark discharge. The star pinch variant of this source has efficiently generated 13.5 nm radiation with lithium vapor and helium buffer gas.
A method and a device for generating extreme ultraviolet (EUV) and soft x-ray radiation from a gas discharge. The device has at least two electrodes each having a flush opening by which an axis of symmetry is defined, in which an intermediate space with a wide spatial homogenous gas filling between anode and cathode is provided. The electrodes are formed in such a way, that the gas discharge is formed exclusively in the volume defined by the flush openings. The current pulses with respect to amplitude and period duration are selected in such a way that a dense hot plasma channel is formed on the axis of symmetry, the plasma being the source of EUV and/or soft x-ray radiation. The preferred area of application is the EUV projection lithography in the spectral range around 13 nm.
A microcavity discharge device generates radiation with wavelengths in the range of from 11 to 14 nanometers. The device has a semiconductor plug, a dielectric layer, and an anode layer. A microcavity extends completely through the anode and dielectric layers and partially into the semiconductor plug. According to one aspect of the invention, a substrate layer has an aperture aligned with the microcavity. The microcavity is filled with a discharge gas under pressure which is excited by a combination of constant DC current and a pulsed current to produce radiation of the desired wavelength. The radiation is emitted through the base of the microcavity. A second embodiment has a metal layer which transmits radiation with wavelengths in the range of from 11 to 12 nanometers, and which excludes longer wavelengths from the emitted beam.
A microcavity discharge device generates radiation with wavelengths in the range of from 11 to 14 nanometers. The device has a semiconductor plug, a dielectric layer, and an anode layer. A microcavity extends completely through the anode and dielectric layers and partially into the semiconductor plug. According to one aspect of the invention, a substrate layer has an aperture aligned with the microcavity. The microcavity is filled with a discharge gas under pressure which is excited by a combination of constant DC current and a pulsed current to produce radiation of the desired wavelength. The radiation is emitted through the base of the microcavity. A second embodiment has a metal layer which transmits radiation with wavelengths in the range of from 11 to 12 nanometers, and which excludes longer wavelengths from the emitted beam.
A method of vacuum ultraviolet (VUV) lithography in which an irradiating wavelength is selected to be in a region of low absorption in air, e.g., one in the vicinity of a local minimum in an oxygen absorption spectrum. In one embodiment, a lithographic exposure wavelength is advantageously selected between 121.0 nm to 122.0 nm, preferably at about 121.6 nm, corresponding to an absorption window in the oxygen spectrum. This method relaxes the otherwise stringent vacuum and inert gas purge requirement imposed on a VUV lithographic tool.
