Metal doping agents are introduced into metal polyoxyalkylated liquid precursor solutions for use in processes for forming thin-layer capacitors (10) to be used in integrated circuits such as DRAMS and the like. The dopants serve to reduce capacitor leakage current by altering a dominant type of electron emission, as determined by a change in the slope of a line plotted as leakage current versus bias voltage. The specially doped precursor solutions preferably include mixtures of Ce, Cr, Dy, Mn, and Ti moieties.
RELATED APPLICATIONS
This application is a continuation-in-part of U.S. patent application Ser. No. 08/165,082, filed Dec. 10, 1993, which in turn is a continuation-in-part of application Ser. No. 08/132,744, filed Oct. 6, 1993, which in turn is a continuation-in-part of U.S. patent applications Ser. No. 07/993,380, filed Dec. 18, 1992, now U.S. Pat. No. 5,456,945, Ser. No. 07/981,133, filed Nov. 24, 1992, now U.S. Pat. No. 5,423,285, and Ser. No. 07/965,190, filed Oct. 23, 1992, now abandoned, the latter two applications are in turn continuations-in-part of U.S. patent application Ser. No. 07/807,439, filed Dec. 13, 1991, now abandoned.
A method for simultaneously producing areas of paraelectric states and areas of ferroelectric states on a single thin film layer, thereby reducing the number of processing steps required to produce integrated chips containing both standard capacitors and non-volatile memory devices from the number of steps needed using the conventional approach. A device containing both ferroelectric capacitors and non-ferroelectric capacitors using a single thin film as the dielectric.
The present invention relates to a method for producing an Sr--Bi--Ta or Nb-based composite alkoxide with the structure of an atomic arrangement controlled, having a metal atomic ratio of Sr:Bi:Ta or Nb=1:2:2, characterized in that an Sr alkoxide (Sr(OR).sub.2) prepared from an Sr metal is allowed to react with a Bi alkoxide (Bi(OR).sub.3) in alcohol to produce an Sr--Bi double alkoxide (Sr[Bi(OR).sub.4 ].sub.2), and subsequently the alkoxide is allowed to react with a Ta alkoxide (Ta(OR).sub.5) or an Nb alkoxide (Nb(OR).sub.5).
The temperature at which an oxide dielectric thin film is formed can be made lower than conventional by reducing the concentration of oxygen in an atmosphere for forming the thin film. As a result, there can be formed an oxide dielectric thin film which has a crystal structure preferentially oriented at a crystal plane allowing a polarization axis to be directed in the vertical direction, which eliminates any reaction with an electrode material, and controls the growth of crystal grains. The use of such an oxide dielectric thin film can provide an oxide dielectric element having a high spontaneous polarization and a small coercive field. Consequently, it is possible to achieve a dielectric element having a high density of integration for detecting reading and writing operations, and a semiconductor device using the same.
A perovskite type manganese oxide thin film capable of working at temperatures within an electron cooling range and a high sensitivity infrared sensing element using the same thin film are disclosed. The thin film of perovskite type manganese oxide containing an element Ca or Sr and elements La, Mn and O is characterized in that a metal-insulation phase transition point of the thin film lies within a range of temperatures obtainable by a thermoelectric cooling method. The perovskite type manganese oxide is a thin film produced by a sol-gel method and the film is used for manufacturing an infrared sensing element.
A single crystalline ternary nanostructure having the formula A.sub.xB.sub.yO.sub.z, wherein x ranges from 0.25 to 24, and y ranges from 1.5 to 40, and wherein A and B are independently selected from the group consisting of Ag, Al, As, Au, B, Ba, Br, Ca, Cd, Ce, Cl, Cm, Co, Cr, Cs, Cu, Dy, Er, Eu, F, Fe, Ga, Gd, Ge, Hf, Ho, I, In, Ir, K, La, Li, Lu, Mg, Mn, Mo, Na, Nb, Nd, Ni, Os, P, Pb, Pd, Pr, Pt, Rb, Re, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Tc, Te, Ti, Tl, Tm, U, V, W, Y, Yb, and Zn, wherein the nanostructure is at least 95% free of defects and/or dislocations.
