A 3-phase charge-coupled imaging device is operated in the interlace mode. During integration, voltages are applied to the clock electrodes such that charge is integrated below the same set of electrodes each time. The signal charges of the first field are formed in that 3/4 portion of the charge in each picture element is augmented by 1/4 portion of the charge of the preceding picture element, while the signal charges of the second field are formed in that the 3/4 portion is augmented by 1/4 portion of the charge generated in the following picture element. These summations may be carried out in the sensor itself in that the charge packages are shifted to the left and right during integration. The flicker which is usually the result of interlacing is very strongly reduced in this way.
BACKGROUND OF THE INVENTION
This is a continuation of application Ser. No. 08/218,993 filed Mar. 28, 1994, which is a continuation of parent application Ser. No. 911,817, filed Jul. 10, 1992, both now abandoned.
An image sensor comprises an array of photodiodes and corresponding transfer cells for receiving charge packets from the photodiodes. Each of the transfer cells includes first, second and third electrodes arranged in sequence along a semiconductor channel, wherein the first and third electrodes have substantially equal time constants, and the second electrode has a lower electrical resistance than the first and third electrodes. With the charge packets being transferred to the transfer cells, first and second pulse sequences are respectively applied to the first and third electrode, of each transfer cell, and a constant potential is applied to the second electrode, wherein the first and second pulse sequences have a 90-degree phase difference with respect to each other.
In a method of generating red, green and blue color signals, the red, green and blue color signals are picked up by red, green and blue color sensors each having a horizontal read-out register, while first n-phase clock signals (.phi..sub.C1, .phi..sub.C2, .phi..sub.C3), generated (DEL) from a pixel clock signal (f), are processed (MUX-G) to obtain second n-phase clock signals (.phi..sub.C1 (G), .phi..sub.C2 (G), .phi..sub.C3 (G)) for the read-out register of the green color sensor in order to obtain an electronic half pixel offset for the green color signal with respect to the red and blue color signals.
A solid-state image pickup device for generating image signals in accordance with incident light includes a semiconductor substrate with a semiconductor region formed on one surface thereof, plural channel regions extending in a column direction on the region and defining plural picture elements in which electric charges are accumulated, and plural transfer electrodes extending in a row direction on the semiconductor region. The picture elements include light receiving elements accumulating electric charges according to incident light and storage elements for storing charges transferred from the light receiving elements. The light receiving elements include a first set in which corresponding transfer elements are simultaneously activated and inactivated in first and second image pickup operations and a second set in which all corresponding transfer electrodes are inactivated in the first image pickup operation and transfer electrodes are simultaneously activated and inactivated in the second image pickup operation.
There is disclosed a solid-state image pickup device in which light receiving elements of a light receiving region generates information charges in accordance with incident lights. The information charges are transferred to storage picture elements of a storage region, and subsequently emitted as image signals. Here, the storage region is formed smaller than the light receiving region. Only the information charges of a selected region are transferred from the light receiving elements of the light receiving region to the storage region. Therefore, thinned-out image signals can be obtained.
A semiconductor energy detector having a region for detection and charge accumulation/transfer where a two-dimensional pixel array is formed on a surface of a semiconductor substrate on which energy rays become incident, is characterized in that the region for detection and charge accumulation/transfer comprises a plurality of transfer electrodes formed in each pixel, and an excess charge removing means arranged in correspondence with one of the transfer electrodes in each pixel.
